CQY78
Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge
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BPW33)
CQY78
CQY77
CQY78 IV
CQY77A
DIN5033
BPW33
germanium photodiode PIN
phototransistor 600 nm
solar cell transistor infrared
photodiode germanium
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CQY78
Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
Text: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The
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Untitled
Abstract: No abstract text available
Text: SIEMENS BPW 33 SURFACE MOUNT BPW 33S SILICON PHOTODIODE VERY LOW DARK CURRENT Characteristics TA=25°C Parameter Symbol Value Unit S nA/lx A -S m a x 75 (>35) 800 A 350 to 1100 nm A Lx W 7.34 2,71 x 2.71 mm2 Distance, C h ip S urface to C ase Surface H 0.5
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BPW33;
BPW33S;
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotodiode Silicon Photodiode BPW 33 Cathode marking 4.0 Chip position CO o o LO co co 1 4a i mm spacing -Photosensitive area 2.65 mm x 2.65 mm CO Approx. weight 0.1 O C O o o 0 GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE006643
BPW33
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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lg 6154
Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp
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Q60215-Y62
O60215-Y63-S1
Q60215-Y65
Q60215-Y66
Q60215-Y67
Q60215-Y111-S4
Q60215-Y111-S5
Q60215-Y1111
Q60215-Y1112
Q60215-Y1113
lg 6154
KTY 10-8
DL1416
KTY 20-5
DL440
O62902-B156-F222
Q62901-B64
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Siemens S35
Abstract: No abstract text available
Text: BPW 33 SIEMENS Silicon Photodiode FEATURES • Especially suitable tor applications from 3S0nmtot100nm • Low reverse current typ JOpA Characteristics Ta =2S°C, Standard Light A, T=2856 K • DIL plastic package with high packing density Parameter Unit
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3S0nmtot100nm
BPW33
Siemens S35
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SFH 255 FA
Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite
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068000-A5018
Q68000-A5017
Q68000-A5707
Q62703-N26
Q62703-N51
Q62703-N52
Q68000-A7302
Q68000-A7303
Q68000-A7304
Q68000-A8086
SFH 255 FA
LR 2703
LY3360K
dl340m
FP310L100-75
Q68000-A8452
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BPW33
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotodiode Silicon Photodiode BPW 33 Photosensitive area 2.65 mm x 2.65 mm CO Approx. weight 0.1 g G€006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im
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G006643
Q62702-P76
BPW33
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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SPAD
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotodiode Silicon Photodiode oo io Î -J 0 .3 5 °-2 0 I Fla sh c re a i BPW 33 L 0 .5 5 .0 8 m m Spad" 9 - R a d ia n t se n sitive a re a A p p ro x . w e ig h t 0.1 feo06643 C a tho de g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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