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    BP 109 TRANSISTOR Search Results

    BP 109 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BP 109 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PZT2222A

    Abstract: PZT2907A SC-73 BP 109 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet Supersedes data of 1997 Jun 02 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A FEATURES PINNING • High current max. 600 mA


    Original     		PDF M3D087 PZT2222A OT223 PZT2907A. MAM287 OT223) 115002/00/03/pp7 PZT2222A PZT2907A SC-73 BP 109 transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet Supersedes data of 1997 Jun 02 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A PINNING FEATURES • High current max. 600 mA


    Original     		PDF M3D087 PZT2222A OT223 PZT2907A. MAM287 OT223) 115002/00/03/pp7

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZT4401 NPN switching transistor Product data sheet 1999 May 10 NXP Semiconductors Product data sheet NPN switching transistor PZT4401 PINNING FEATURES • High current max. 600 mA PIN • Low voltage.


    Original     		PDF M3D087 PZT4401 OT223 PZT4403. MAM287 ZT4401 OT223) 115002/00/01/pp7

    zt4401

    Abstract: BP 109 transistor PZT4401 PZT4403 SC-73 SOT223 nxp
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT4401 NPN switching transistor Product data sheet 1999 May 10 NXP Semiconductors Product data sheet NPN switching transistor FEATURES PZT4401 PINNING • High current max. 600 mA PIN • Low voltage.


    Original     		PDF M3D087 PZT4401 OT223 PZT4403. MAM287 ZT4401 OT223) 115002/00/01/pp7 zt4401 BP 109 transistor PZT4401 PZT4403 SC-73 SOT223 nxp

    BP317

    Abstract: PZT2222A PZT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING


    Original     		PDF M3D087 PZT2222A OT223 PZT2907A. MAM287 OT223) SCA63 115002/00/03/pp8 BP317 PZT2222A PZT2907A

    BP317

    Abstract: PZT4401 PZT4403
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT4401 NPN switching transistor Product specification 1999 May 10 Philips Semiconductors Product specification NPN switching transistor FEATURES PZT4401 PINNING • High current max. 600 mA PIN


    Original     		PDF M3D087 PZT4401 OT223 PZT4403. MAM287 ZT4401 OT223) 115002/00/01/pp8 BP317 PZT4401 PZT4403

    MGDS-75

    Abstract: MGDS-75-H-C MGDS-75-H-J FC03 bergquist ultra soft SIL-PAD density
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 MGDS-75 MGDS-75-H-C MGDS-75-H-J FC03 bergquist ultra soft SIL-PAD density

    MGDS-75-H-E

    Abstract: MGDS-75-O-E MGDS-75-H-C MGDS-75-H-J thermaflo 424800B0000 MGDS-75-O-B MGDS-75-H-F GAIA MGDS-75-H-E MGDS-75-O-I MGDM-75
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 MGDS-75-H-E MGDS-75-O-E MGDS-75-H-C MGDS-75-H-J thermaflo 424800B0000 MGDS-75-O-B MGDS-75-H-F GAIA MGDS-75-H-E MGDS-75-O-I

    thermaflo

    Abstract: No abstract text available
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 thermaflo

    MGDS-75-H-C

    Abstract: FC03 MGDS-75-H-E MGDS-75 MGDS-75-H-J bergquist ultra soft v0 BH Re transistor MGDS75HI MGDS-75-O-E MGDS-75-O-I
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 MGDS-75-H-C FC03 MGDS-75-H-E MGDS-75 MGDS-75-H-J bergquist ultra soft v0 BH Re transistor MGDS75HI MGDS-75-O-E MGDS-75-O-I

    FC03

    Abstract: MGDS-75-H-B
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 FC03 MGDS-75-H-B

    Untitled

    Abstract: No abstract text available
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032

    MGDS-75

    Abstract: MGDS75HF MGDS-75-H-E FC03
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 MGDS-75 MGDS75HF MGDS-75-H-E FC03

    GAIA MGDS-75-H-E

    Abstract: 5cw2 bergquist ultra soft SIL-PAD density
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 GAIA MGDS-75-H-E 5cw2 bergquist ultra soft SIL-PAD density

    MGDS-75-H-B

    Abstract: No abstract text available
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Low Input Voltage 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F FC03-032 MGDS-75-H-B

    Untitled

    Abstract: No abstract text available
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Low Input Voltage 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032

    HS1568EX

    Abstract: No abstract text available
    Text: Hi-Rel DC/DC CONVERTER MGDM-75 : 75W POWER Hi-Rel Grade 5:1 Ultra Wide Input Single Output Metallic case - 1 500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input compliant with MIL-STD-704A/D/F • Industry standard quarter brick package


    Original     		PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 HS1568EX

    tlo82

    Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
    Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil


    Original     		PDF I-20089 tlo82 TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • Switching and linear amplification.


    OCR Scan     		PDF PZT2222A OT223 PZT2907A. OT223) OT223

    TESLA KU 602

    Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
    Text: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente


    OCR Scan     		PDF O-220 TESLA KU 602 TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste

    Untitled

    Abstract: No abstract text available
    Text: HEW LETT-PA CKARD/ CHPNTS b lE » Thal H EW LETT • M4M75AM GOCHflb? 074 HHPA AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor 1 "MM P A C K A R D Features 86 Plastic Package • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz


    OCR Scan     		PDF M4M75AM AT-60586

    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


    OCR Scan     		PDF

    MRA705

    Abstract: BFR520 MSB003 BFR520 transistor
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. , radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low noise figure


    OCR Scan     		PDF BFR520 MSB003 MRA705 BFR520 transistor

    philips ID 27

    Abstract: hjb surface mount 100-P BUK482-60A
    Text: PHILIPS INTERNATIONAL b SE T> • ?HDa2b DObmt.3 Philips Semiconductors N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK482-60A OT223 711DfiSb OT223. 35\im philips ID 27 hjb surface mount 100-P BUK482-60A