Untitled
Abstract: No abstract text available
Text: General Description of Light Emitting Diodes • Handling Precautions This product is sensitive to static electricity and demands a lot of attention. Please take all possible measures for static electricity and surge solution. ■ Lead Forming Method ; ;
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA
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Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1
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NNCD18DT
NNCD36DT
NNCD36DT
IEC61000-4-2
SC-76)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and
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NNCD36ST
IEC61000-4-2
SC-70)
NNCD18ST
NNCD36ST
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NEC semiconductor
Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect
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C11531E)
NEC semiconductor
C11531E
dumper
diode dumper
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Transistor NEC 30
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.
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IEC61000-4-2
SC-76)
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ce1a3q
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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TRANSISTOR K 314
Abstract: NEC semiconductor
Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in
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2SD2463
2SD2463
C11531E)
TRANSISTOR K 314
NEC semiconductor
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CE1F3P
Abstract: D1617
Text: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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cycle50
CE1F3P
D1617
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2SD1481
Abstract: DSA00108835
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip C-to-B Zener diode for surge voltage absorption
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2SD1481
2SD1481
DSA00108835
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nec photocoupler
Abstract: PS2913-1 PS2913-1-F3
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2913-1 SINGLE Tr. OUTPUT, HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL PACKAGE −NEPOC Series− FLAT-LEAD PHOTOCOUPLER TM DESCRIPTION The PS2913-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
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PS2913-1
PS2913-1
PS28xx
nec photocoupler
PS2913-1-F3
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PS2915-1
Abstract: PS2915-1-F3
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2915-1 HIGH CTR, AC INPUT RESPONSE TYPE 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2915-1 is an optically coupled isolator containing GaAs light emitting diodes and an NPN silicon
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PS2915-1
PS2915-1
PS28xx
PS2915-1-F3,
PS2915-1-F3
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IEC-61000-4-2
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) The NNCD6.8PG is a diode developed for ESD (Electrostatic 2.8 ± 0.2 +0.1
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IEC-61000-4-2
Abstract: DIODE C 8Ph
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION The NNCD6.8PH is a diode developed for ESD (Electrostatic
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IEC-61000-4-2
DIODE C 8Ph
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nec k3
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PL 5-PIN SUPER SMALL MINI MOLD FLAT LEAD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUAD TYPE: COMMON ANODE) DESCRIPTION PACKAGE DRAWING (Unit: mm) The NNCD6.8PL is a low capacitance type diode developed for ESD
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IEC61000-4-2
nec k3
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nec k3
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RL 5-PIN SUPER SMALL MINI MOLD FLAT LEAD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUAD TYPE: COMMON ANODE) DESCRIPTION PACKAGE DRAWING (Unit: mm) The NNCD6.8RL is a low capacitance type diode 1.6±0.1
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NEC diode
Abstract: transistor marking 7D 2SD1695 C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and
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2SD1695
2SD1695
NEC diode
transistor marking 7D
C11531E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION is a low capacitance type diode 2.8 ± 0.2 developed for ESD (Electrostatic Discharge) absorption. Based
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IEC61000-4-2
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IEC-61000-4-2
Abstract: NNCD10J NNCD16J NNCD36J DIODE 6j
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE These products are a diode developed for ESD (Electrostatic 1.4 ± 0.1 Discharge) absorption. Based on the IEC-61000-4-2 test on
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NNCD36J
IEC-61000-4-2
NNCD10J
NNCD16J
NNCD36J
DIODE 6j
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DIMENSION (Unit: mm) The NNCD6.8RH is a low capacitance type diode developed
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IEC61000-4-2
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d1889
Abstract: 2SK3230C SC-89 marking EE
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230C contains a diode and high resistivity 3 0.8 ±0.1 phones. 1.6 ±0.1 for compact ECMs for audio or mobile devices such as cell-
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2SK3230C
2SK3230C
d1889
SC-89
marking EE
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nec example of lot number
Abstract: NEC semiconductor PS2932-1 PS2932-1-F3 PS2933-1 PS2933-1-F3
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2932-1, PS2933-1 HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2932-1, PS2933-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
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PS2932-1,
PS2933-1
PS2933-1
PS28xx
PS2932-1)
PS2933-1)
nec example of lot number
NEC semiconductor
PS2932-1
PS2932-1-F3
PS2933-1-F3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,
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NNCD39DA
IEC61000-4-2
IEC61000-4-2)
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