nec photocoupler
Abstract: PS2913-1 PS2913-1-F3
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2913-1 SINGLE Tr. OUTPUT, HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL PACKAGE −NEPOC Series− FLAT-LEAD PHOTOCOUPLER TM DESCRIPTION The PS2913-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
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PS2913-1
PS2913-1
PS28xx
nec photocoupler
PS2913-1-F3
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PS2915-1
Abstract: PS2915-1-F3
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2915-1 HIGH CTR, AC INPUT RESPONSE TYPE 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2915-1 is an optically coupled isolator containing GaAs light emitting diodes and an NPN silicon
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PS2915-1
PS2915-1
PS28xx
PS2915-1-F3,
PS2915-1-F3
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TC-2460
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ325,325-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 5.0 ±0.2 FEATURES 2 3 1.1 ±0.2 • Built-in G-S Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) +0.2 Gate to Source Voltage (AC)
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2SJ325
325-Z
TC-2460
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d1832
Abstract: DC-M4 2SJ325 325-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ325,325-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 5.0 ±0.2 FEATURES 2 3 1.1 ±0.2 • Built-in G-S Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) +0.2 Gate to Source Voltage (AC)
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2SJ325
325-Z
d1832
DC-M4
325-Z
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nec photocoupler
Abstract: NEC ps2911 pc 100 nec nec 2503
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2911-1 HIGH CTR, 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications.
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PS2911-1
PS2911-1
PS28xx
PS2911-1-F3,
nec photocoupler
NEC ps2911
pc 100 nec
nec 2503
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A CLIPPER CIRCUIT APPLICATIONS
Abstract: C11531E RD10FM RD11FM RD12FM RD13FM RD15FM RD16FM RD18FM RD51FM
Text: DATA SHEET ZENER DIODES RD4.7FM to RD51FM 1 W PLANAR TYPE 2-PIN POWER MINI-MOLD ZENER DIODES The RD4.7FM to RD51FM are zener diodes with an allowable PACKAGE DRAWING UNIT: mm dissipation of 1 W and a planar type 2-pin power mini-mold. FEATURES • This diode is ideal for high density mounting due to about 65%
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RD51FM
RD51FM
C11531E)
A CLIPPER CIRCUIT APPLICATIONS
C11531E
RD10FM
RD11FM
RD12FM
RD13FM
RD15FM
RD16FM
RD18FM
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NR6300EZ
Abstract: PX10160E NEC JAPAN 567 p1070 NR6300
Text: DATA SHEET PHOTO DIODE NR6300EZ φ 30 m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems. FEATURES • Small dark current ID = 5 nA • Small terminal capacitance
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NR6300EZ
NR6300EZ
PX10160E
NEC JAPAN 567
p1070
NR6300
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION is a low capacitance type diode 2.8 ± 0.2 developed for ESD (Electrostatic Discharge) absorption. Based
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IEC-61000-4-2
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DIODE C 8Ph
Abstract: ak4 power tr
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DIMENSION (Unit: mm) The NNCD6.8PH is a low capacitance type diode developed for ESD
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IEC-61000-4-2
DIODE C 8Ph
ak4 power tr
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IEC-61000-4-2
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) The NNCD6.8PG is a diode developed for ESD (Electrostatic 2.8 ± 0.2 +0.1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) The NNCD6.8PG is a low capacitance type diode developed 2.8 ± 0.2 +0.1
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IEC-61000-4-2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION is a low capacitance type diode 2.8 ± 0.2 developed for ESD (Electrostatic Discharge) absorption. Based
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IEC61000-4-2
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nec example of lot number
Abstract: NEC semiconductor PS2932-1 PS2932-1-F3 PS2933-1 PS2933-1-F3
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2932-1, PS2933-1 HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2932-1, PS2933-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
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PS2932-1,
PS2933-1
PS2933-1
PS28xx
PS2932-1)
PS2933-1)
nec example of lot number
NEC semiconductor
PS2932-1
PS2932-1-F3
PS2933-1-F3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DIMENSION (Unit: mm) The NNCD6.8RH is a low capacitance type diode developed
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IEC61000-4-2
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IEC-61000-4-2
Abstract: DIODE C 8Ph
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION The NNCD6.8PH is a diode developed for ESD (Electrostatic
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IEC-61000-4-2
DIODE C 8Ph
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2SD1843
Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to
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2SD1843
2SD1843
diode dumper
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA
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d1541
Abstract: IEC-61000-4-2
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6H, NNCD6.8H LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUAD TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) This product series is a low capacitance type diode developed for ESD
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IEC-61000-4-2
d1541
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NNCD36J
Abstract: IEC-61000-4-2 NNCD10J NNCD16J
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE These products are a diode developed for ESD (Electrostatic 1.4 ± 0.1 Discharge) absorption. Based on the IEC-61000-4-2 test on
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NNCD36J
IEC-61000-4-2
NNCD36J
NNCD10J
NNCD16J
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NR8800FS-CB φ 80 m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS DESCRIPTION The NR8800FS-CB is an InGaAs avalanche photo diode module with multi mode fiber, and can be used in OTDR systems. FEATURES • Small dark current
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NR8800FS-CB
NR8800FS-CB
GI-62
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NEC semiconductor
Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect
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C11531E)
NEC semiconductor
C11531E
dumper
diode dumper
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A CLIPPER CIRCUIT APPLICATIONS
Abstract: Contact Electronics nncd18 IEC-61000-4-2 NNCD10J NNCD16J NNCD18J NNCD24J NNCD36J DIODE 6j
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE DESCRIPTION products (Electrostatic are a Discharge) diode developed absorption. for Based ESD on 1.4 ± 0.1 the 1.0 ± 0.1
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NNCD36J
IEC-61000-4-2
61000-4-2ems,
A CLIPPER CIRCUIT APPLICATIONS
Contact Electronics
nncd18
NNCD10J
NNCD16J
NNCD18J
NNCD24J
NNCD36J
DIODE 6j
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Transistor NEC 30
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode
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ce1a3q
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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