Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to
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MBM29LV160TM/BM
32M-bit,
48-pin
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to
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MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
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MBM29LV160TM90TN
Abstract: FPT-48P-M19
Text: MBM29LV160TM/BM 90 Data Sheet Retired Product MBM29LV160TM/BM 90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29LV160TM/BM
MBM29LV160TM/BM
DS05-20906-4E
F0312
ProductDS05-20906-4E
MBM29LV160TM90TN
FPT-48P-M19
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
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DS05-20906-1E
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
F0306
FPT-48P-M19
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-3E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
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DS05-20906-3E
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
F0312
FPT-48P-M19
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29PL32BM
Abstract: 29PL32TM B4802
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 32 M 4M x 8/2M × 16 BIT MirrorFlashTM MBM29PL32TM/BM 90/10 n DESCRIPTION The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to
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MBM29PL32TM/BM
32M-bit,
48-pin
48-ball
29PL32BM
29PL32TM
B4802
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20907-3E FLASH MEMORY CMOS 32 M 4M x 8/2M × 16 BIT MirrorFlashTM* MBM29PL32TM/BM 90/10 • DESCRIPTION The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be
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DS05-20907-3E
MBM29PL32TM/BM
32M-bit,
48-pin
48-ball
MBM29PL32TM/BM
F0407
FPT-48P-M19
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29PL32TM
Abstract: 29PL32BM
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.3E FLASH MEMORY CMOS 32 M 4M x 8/2M × 16 BIT MirrorFlashTM MBM29PL32TM/BM 90/10 n DESCRIPTION The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to
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MBM29PL32TM/BM
32M-bit,
48-pin
48-ball
29PL32TM
29PL32BM
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29PL32BM
Abstract: FPT-48P-M19
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20907-1E FLASH MEMORY CMOS 32 M 4M x 8/2M × 16 BIT MirrorFlashTM* MBM29PL32TM/BM 90/10 • DESCRIPTION The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be
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DS05-20907-1E
MBM29PL32TM/BM
32M-bit,
48-pin
48-ball
F0306
29PL32BM
FPT-48P-M19
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PDF
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FPT-48P-M19
Abstract: No abstract text available
Text: MBM29PL32TM/BM 90/10 Data Sheet Retired Product MBM29PL32TM/BM 90/10 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29PL32TM/BM
MBM29PL32TM/BM
DS05-20907-4E
F0407
ProductDS05-20907-4E
FPT-48P-M19
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28C64 EEPROM
Abstract: 28C64 MBM28C64-25 MBM28C64 eeprom 28c64 till 111 28C64-25 eeprom 28c64-35 MBM28C64-35 at 28c64s
Text: FUJITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM M BM 28C64-25 M BM 28C64-35 S e p te m b e r T 9 8 7 E d itio n 2 .0 CMOS 8 1 9 2 x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 28C64 is a high speed 65,536 bits CMOS electrically erasable
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65536-BIT
MBM28C64-25
MBM28C64-35
8192x8
28C64
28C64-25
28C64-35
28C64-
28C64 EEPROM
MBM28C64
eeprom 28c64
till 111
eeprom 28c64-35
MBM28C64-35
at 28c64s
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TMP93PS40F
Abstract: BM11109 BM11129 CS40 TMP93CM40 TMP93CS40 TMP93PS40 TMP93PS40DF P-LQFP100-1414 93PS40-1
Text: TO SH IB A TMP93PS40 Low Voltage / Low Power CMOS 16-bit Microcontrollers TMP93PS40F TMP93PS40DF 1. Outline and Device Characteristics The T M P9 3 PS4 0 is O T P type M C U w hich includes 64 K b yte One-time P R O M . U sin g the adapter- socket BM 11109 or BM 11129 , you can w rite and v e rify the data for the T M P9 3PS4 0.
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TMP93PS40
16-bit
TMP93PS40F
TMP93PS40DF
TMP93PS40
BM11109
BM11129)
TMP93PS40.
TMP93CM40
BM11129
CS40
TMP93CS40
TMP93PS40DF
P-LQFP100-1414
93PS40-1
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AS5510
Abstract: No abstract text available
Text: TO SH IB A TMP93PS40 Low Voltage / Low Power CMOS 16-bit Microcontrollers TMP93PS40F TMP93PS40DF 1. Outline and Device Characteristics The T M P9 3 PS4 0 is O T P type M C U w hich includes 64 K b yte One-time P R O M . U sin g the adapter- socket BM 11109 or BM 11129 , you can w rite and v e rify the data for the T M P9 3PS4 0.
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16-bit
TMP93PS40
TMP93PS40F
TMP93PS40DF
64K-byte)
32Kbyte)
TMP93PS40F
00MGU
00MGWU
CSA10
AS5510
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Untitled
Abstract: No abstract text available
Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH2S64DKD -7,-8A,-8,-10 _ 134217728-BIT 2097152-WORD BY 64-Bm SvnchronousDR AM DESCRIPTION The MH2S64DKD is 2097152-word by 64-bit
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MH2S64DKD
134217728-BIT
2097152-WORD
64-Bm
64-bit
MIT-DS-0173-0
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3c23
Abstract: GL-3C23 thyratron tube thyratron 3C-23
Text: G L -3 C 2 3 DESCRIPTION AND RATING ETI-117 PAGE 1 WÊBsÈÈit T 4 » * * 4 -4 5 K * ^h h bm k V ••l.l X v W THYRATRON DESCRIPTION T he GL-3C23 is a negative-control thyratron for use in regulated-rectifier circuits. The mixture of inert-gas and mercury vapor provides constancy
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GL-3C23
GL-3C23
K-9033533
3c23
thyratron tube
thyratron
3C-23
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E164469-F3
Abstract: usb 2.0 male A to usb male A cable 153011 cafc REFERENCE DEA 24AW
Text: Référence Description l o liqueur 153011 Cordon 1 SB2.0 AM /BM 1.00m 153012 Cordon 1 SB2.0 A M /B M 1.Hum 1534113 < ordon 1 SB2.0 A M /B M 3.00m I 53015 ordo n 1 SB2.0 AM /B M 4.50m -4 6 JL 4 /0 12.15 IL I □ □ its : 3C USB A TYPE -MALE_ USB B TYPE
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28AWG/2C
24AWGy20UL
E164469-F3
24AWG
28AWG)
148oh
E164469-F3
usb 2.0 male A to usb male A cable
153011
cafc
REFERENCE DEA
24AW
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29f400tc
Abstract: *22AB
Text: FLASH MEMORY 4M 512K x 8/256K x 16 BIT CMOS M BM 29F400TC-55-70-90/MBM29F400BC-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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8/256K
29F400TC-55-70-90/MBM29F400BC-55/-70/-90
48-pin
44-pin
F9811
29f400tc
*22AB
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29LV016
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16M 2M x 8 BIT MBM 29LV 016T-80-90 i 2/M BM 29LV 01 6B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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40-pin
F9811
29LV016
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65sc802
Abstract: DFP 26 G65SC D718 G65SC816 the6502 G65SC802 G65SC816
Text: c n »/ SEMI CONDUCTOR DIV SEE D is a ib ^ o 0 0 0 17m bm h « c a l T - H i -I7-Û6 G65SC802 G65SC816 A C M D Microcircuits CMOS 8/16-Bit Microprocessor Family Features General Description • Advanced CMOS design for low power consumption and increased noise immunity
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31b4G
T-m-17-06
G65SC802
G65SC816
8/16-Bit
16-bit
ins03/BA3
07/BA7
Z3A13
IDA12
65sc802
DFP 26
G65SC
D718
G65SC816
the6502
G65SC802 G65SC816
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20855-4E FLASH MEMORY CMOS 16M 2M x 8 BIT M BM 29LV 016T-30-90 -i 2/M B M 29 LV 01 6B-30-90 -12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands
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DS05-20855-4E
016T-30-90
6B-30-90
40-pin
F40007S-1C-1
FPT-40P-M07)
04V----1
043-o2)
F40008S-1C-1
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MBM2732A-30
Abstract: MBM2732A-35 MBM2732A-25 MBM2732A-20 MBM2732A MBM2732A30 MBM2732A-35X MBM2732A-X 2732A eprom MBM2732
Text: MBM2732A MBM2732A-X FU JIT SU M IC R O E L E C T R O N IC S UV ERASABLE 32,768-BIT READ ONLY MEMORY DESCRIPTION The Fujitsu M BM 2732A is a high speed 32,768-bit static N-channel M O S erasable and electrically re programmable read only memory {EPROM . It is especially well
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768-BIT
MBM2732A
MBM2732A-X
MBM2732A-2W-25/-30:
MBM2732A-35/-35X)
MBM2732A-30
MBM2732A-35
MBM2732A-25
MBM2732A-20
MBM2732A30
MBM2732A-35X
MBM2732A-X
2732A eprom
MBM2732
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Untitled
Abstract: No abstract text available
Text: L S I TECHNOLOGY VLSI I NC 47E ¡VTI » T e c h n o l o g y , in c . T - lS - H S - O H GOVERNMENT PRODUCTS DIVISION PREVIEW VM1553 BUS CONTROLLER REMOTE TERMINAL INTERFACE FEATURES • C om prehensive MIL-STD-1553B dual-redundant Bus C ontroller BC , Bus M onitor (BM), and Remote
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VM1553
MIL-STD-1553B
196-pin
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BA482
Abstract: BA483 BA484
Text: LTE D • BA482 BA483 BA484 IAPX □D2blbc] T4B N AMER PHILIPS/DISCRETE SILICON PLANAR DIODES S w itching diodes in th e su bm iniature D O -3 4 glass envelope, intended fo r band sw itching in v .h .f. television tuners. Special featu re o f th e diodes is th e ir low capacitance.
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BA482
BA483
BA484
DO-34
BA482
BA483
OD-68
DO-34)
BA484
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Untitled
Abstract: No abstract text available
Text: UNLEBB ODOMS NOTED REVISION BM ONENMMS ABE M MCHES TITLE: TOLERANCES ARB ONE PLACE DECIMALS ± .1 [ 2 . 5 ] THREE PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] TWO PLACE DECIMALS ± .0 1 [.3 ]F 0 U R PLACE DECIMALS ± . 0 0 1 0 [ . 0 2 5 ] ANGLES ± r S T M M - 1 X X —X X - X X
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DMEN90N
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