Untitled
Abstract: No abstract text available
Text: 2009.10.21 14:20 페이지108 001 refine-4도 2540DPI 175LPI T MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS BK BM For Ballast, High Temperature Series Long Life Item Item Characteristics Operating temperature range
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2540DPI
175LPI
120Hz)
120Hz
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GD-30
Abstract: InGaAs HEMT mitsubishi
Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.
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May/2008
MGF4934AM/BM
MGF4934BM
12GHz
GD-30
InGaAs HEMT mitsubishi
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38.9MHz SAW FILTER
Abstract: n 38.9MHz SAW FILTER LA7567B LA7567N 3067B LA7567BM AGC-17 71005 60992 TSF1241
Text: 注文コード No. N 6 0 9 9 A 半導体ニューズ No.N6099 とさしかえてください。 LA7567B/BM モノリシックリニア集積回路 TV・VTR用PAL/NTSCマルチサウンド対応 VIF/SIF IF信号処理回路 概要 LA7567B/BMはセミ無調整方式を採用したPAL/NTSCマルチサウンド対応のVIF/SIF ICである。
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N6099
LA7567B/BM
LA7567B/BMPAL/NTSCVIF/SIF
LA7567N/NMS/N
250mW
B8-4251
LA7567B]
LA7567BM]
TSF11JAPAN
38.9MHz SAW FILTER
n 38.9MHz SAW FILTER
LA7567B
LA7567N
3067B
LA7567BM
AGC-17
71005
60992
TSF1241
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U3750BM
Abstract: telefunken em 800 ic 8155 block diagram
Text: U3750BM TELEFUNKEN Semiconductors One Chip Telephone Circuit Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the tone ringer, the
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U3750BM
D-74025
U3750BM
telefunken em 800
ic 8155 block diagram
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intel 8052
Abstract: DS80C320 user manual 80C52 analog device Midas turbo 80C52 C0EX
Text: MiDAS Family BM-MiDAS2.0-V1.4 Brief Manual of MiDAS2.0 Family FLASH / ISP / IAP 8-bit Turbo Microcontrollers V1.4 November 2005 www.keccorp.com Contents 1. Product Overview 2. Features 3. Block Diagram 4. Pin Configurations 5. Pin Descriptions 6. Function Descriptions
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44-TQFP
44-MQFP
44-pin
64-SPDIP
64-PDIP
intel 8052
DS80C320 user manual
80C52
analog device Midas
turbo 80C52
C0EX
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PDF
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U3750BM
Abstract: IC 1458 keyboard ic nc 1458 p1 One-chip telephone IC power protection using dtmf principle ic 8155 block diagram
Text: U3750BM TELEFUNKEN Semiconductors One Chip Telephone Circuit Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the tone ringer, the
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U3750BM
D-74025
U3750BM
IC 1458
keyboard ic
nc 1458 p1
One-chip telephone IC
power protection using dtmf principle
ic 8155 block diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: Dec./2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.
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MGF4934AM/BM
MGF4934BM
12GHz
3000pcs/reel
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Untitled
Abstract: No abstract text available
Text: Sharma Aluminum Electrolytic Capacitors Quick Reference Series General Purpose Features GR 85'C, 2000hrs SM 105'C, 2000hrs BM 105'C, 2000hrs, Shorter profile for SM Long Life 105'C, 2000~5000hrs Long life FM Low Profile 85'C, 1000hrs, Miniature for 7mm/9mm height
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2000hrs
2000hrs,
5000hrs
1000hrs,
1000hrs
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Untitled
Abstract: No abstract text available
Text: 0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0 Bm Typical P1 dB at 4 GHz • High Gain: 12.5 dB Typical G1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic
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ATF-25735
ATF-25735
5965-8710E
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ATF-25735
Abstract: No abstract text available
Text: 0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1 dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic
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ATF-25735
ATF-25735
microns-24
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PM75RSK060
Abstract: 2223z
Text: MITSUBISHI INTELLIGENT POWER MODULES PM75RSK060 FLAT-BASE TYPE INSULATED PACKAGE B D VUPC UFO UP VUPI VVPC VFO VP VVPI VWPC WFO WP VWPI VNC 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. P VNI BM UN VN WN FO P BR
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PM75RSK060
2205EE
PM75RSK060
2223z
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PM75RSK060
Abstract: No abstract text available
Text: MITSUBISHI INTELLIGENT POWER MODULES PM75RSK060 FLAT-BASE TYPE INSULATED PACKAGE B D 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. VUPC UFO UP VUPI VVPC VFO VP VVPI VWPC WFO WP VWPI VNC 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. P VNI BM UN VN WN FO P BR
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PM75RSK060
2205EE
PM75RSK060
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ic 8155 microcontroller
Abstract: ic 8155 block diagram
Text: Tem ic TELEFUNKEN Semiconductors One Chip Telephone Circuit U 3750 BM Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the
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D-74025
ic 8155 microcontroller
ic 8155 block diagram
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2SC1730
Abstract: 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 2SC1654 2SC1655
Text: - 108 - Ta=25sC, *EPÎïTc=25‘ C *± 2SC1653 2SC1654 £ BM BM BW. m 1% VcBO Vc e o Ic(DC) Pc (V) (V) (A) (W) Pci (W) fs. m hF E I.CBO, (max) V'c b (V) (Uh) (min) (Ta-25T!) w t ( (max) ic/ÎE (A) VCE (V) [*EPiÎtyp{g] VcE(sat <,max) (V) (V) le (A) 1e (A)
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2SC1653
2SC1654
2SC1655
2SC1655A
2SC1656
2SC1657
2SC1658
102C2C1B1E1
2SC1731
2SC1732
2SC1730
2SC1688
2SC1740A
2SC1673
2SA933LN
045PG
2SC1708
2SC1661
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Untitled
Abstract: No abstract text available
Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH2S64DKD -7,-8A,-8,-10 _ 134217728-BIT 2097152-WORD BY 64-Bm SvnchronousDR AM DESCRIPTION The MH2S64DKD is 2097152-word by 64-bit
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MH2S64DKD
134217728-BIT
2097152-WORD
64-Bm
64-bit
MIT-DS-0173-0
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IC 7217 Unit COUNTER
Abstract: 7217e
Text: Te m ic TELEFUNKEN Semiconductors U3750BM One Chip Telephone Circuit Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the tone ringer, the
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U3750BM
D-74025
IC 7217 Unit COUNTER
7217e
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Untitled
Abstract: No abstract text available
Text: /^EROFLEX An ARX Com pany Features • Dual redundant rem ote term inal RT , Bus Controller (BC) and Bus Monitor (BM) in one unit ■ Low Power CMOS chip set ■ Extensive error checking ■ Continuous self-test ■ Wrap around data verification while transm itting
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MIL-STD-883
FE-07C0
07BE-0780
Block31-Rec
Block30-Rec
017E-0140
013E-0100
00FE-00C0
00BE-0080
007E-0040
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Untitled
Abstract: No abstract text available
Text: I Ordering number : EN% 50831 CMOS LSI LC321667BJ, BM, BT-70/80 1 MEG 65536 words x 16 bits DRAM EDO Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321667B series is a CMOS dynam ic RAM operating on a single 5 V power source and having a
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LC321667BJ,
BT-70/80
LC321667B
40-pin
A02138
7117D7b
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PDF
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ntp 3100
Abstract: U3750BM ic 8155 block diagram
Text: xEMIC TELEFUNKEN Semiconductors One Chip Telephone Circuit Description TELEFU N K EN m icroelectronic’s one chip telephone circuit, U 3750 BM, is BICM OS integrated circuit that performs all the speech and line interface functions re quired in an electronic telephone set, the tone ringer, the
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u3750bm
ntp 3100
U3750BM
ic 8155 block diagram
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PDF
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P4N20
Abstract: ADT8A
Text: P r BM NARY INFORMATION PM09610S1 Æ lY I^ - PMC-Sierra, inc. BSUE2 PM3350 ELAN 8x10 BPOffflOIMmSEIHBW ETSW rrCH PM3350 ELAN 8x10 8 PORT ETHERNET SWITCH Preliminary Information Issue 2: July 1997 PMC-Sierra, Inc. 105 - 8555 B axter Place Burnaby, BC Canada V 5 A 4 V 7 6 0 4 .415.6000
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PM09610S1
PM3350
8POKT10HBTTj
P4N20
ADT8A
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PDF
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6096453
Abstract: 609-2453 T3412 609-1053 60924
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST GP 00 LTR 01 DESCRIPTION DATE DWN BM CR 3 0JA N 07 REVISED PER E C O - 0 7- 001862 APVD A MATERIAL: HOUSING AND COVER: GLASS-REINFORCED POLYESTER,
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31MAR2000
ECO-07-001862
30JAN07
94-VO,
SEA9-4053
050CT06
6096453
609-2453
T3412
609-1053
60924
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PDF
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A0937
Abstract: A03X ic1707b LC321667BJ LC321667BM LC321667BT 56X16 bt 135 LC321667 101AJ
Text: I Ordering number : EN 5083 CMOS LSI LC321667BJ, BM, BT-70/80 No.3K5083 SAXYO 1 MEG 65536 words x 16 bits DRAM EDO Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321667B series is a CMOS dynam ic RAM operating on a single 5 V power source and having a
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LC321667BJ,
BT-70/80
LC321667B
40-pin
tn707h
D01SED4
A0937
A03X
ic1707b
LC321667BJ
LC321667BM
LC321667BT
56X16
bt 135
LC321667
101AJ
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n Fast Recovery Rectifier Diodes If bm s maximum values for continuous operation V rsm V rrm 260 A Ifav (sin. 180; Tease = 85 °C) 1000 1200 168 A trr = 500 ns trr = 800 ns $ V 800 160 A SKN SKN SKN SKN SKN SKN 135 136 135 136 135 136 $ SKR
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A13bb71
N135F
SO-29
DQ-205
fll3bb71
000b37E
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ DIST R E VIS IO N S 16 LTR DESCRIPTION AU .5 1 6 REF .531 2 16 .328 APVD 03JA N 05 BM JL .3 1 2 I .572 DWN REF D V IE W
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31MAR2000
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