ic AM 12A
Abstract: TRANSISTOR bu 406 E178
Text: PD - 95169 IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC30UPbF
O-220AB
O-220AB
-220AB
ic AM 12A
TRANSISTOR bu 406
E178
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IRFB11N50A
Abstract: IRFI840G
Text: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement
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IRFIB7N50APbF
O-220
IRFI840G
IRFB11N50A
IRFI840G
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035H
Abstract: MB 39A 25 diodes 39a transistor WW 179
Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC50FDPbF
O-247AC
035H
MB 39A 25
diodes 39a
transistor WW 179
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AN-994
Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1
Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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IRGB4B60KD1PbF
IRGS4B60KD1
IRGSL4B60KD1
O-220
O-220
IRGB4B60KD1PbF
O-262
AN-994.
AN-994
C-150
IRGS4B60KD1
IRGSL4B60KD1
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Untitled
Abstract: No abstract text available
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
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AN-994
Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
AN-994
C-150
IRGS4B60KD1
IRGSL4B60KD1
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Untitled
Abstract: No abstract text available
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
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BLW24
Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V
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BLW24
O-1175
O-117
T0-60CE
S0-104
SO-104
BLW24
BLY38
BLY88
bly91
BLY-38
BLX66
bly power transistor
TRANSISTOR BFW 16
BLY36
Transistor BFw 92
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BLY78
Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V
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BLW12
O-117
T0-60CE
S0-104
SO-104
BLY78
BLY87
bly91
BLY93A
TRANSISTOR BFW 11
Transistor BFX 90
BLY34
BLW12
BLY91A
BLY53
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blw 30 or bfw 30
Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V
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O-117
O-117
T0-60CE
S0-104
SO-104
blw 30 or bfw 30
TRANSISTOR BFW 11
BLY83
BLY78
bly91
BLY-38
BLW11
blw 93
BLY76
BLY53
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BLY93A
Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V
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BLW23
8/32-UNC-2A-Thread
O-117
O-117
T0-60CE
S0-104
SO-104
BLY93A
BLY78
BLY34
BLY97A
BLY-38
BLW11
BLY91
BLW25
BLW19
bly 63
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BLW16
Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V
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BLW16
O-117
T0-60CE
S0-104
SO-104
BLW16
BLW25
S0104
BLY78
BLY85
Transistor BFX 59
BFW 100 transistor
bly93a
BLY-38
BLW11
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BLY93
Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V
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BLW14
O-129
O-117
T0-60CE
S0-104
SO-104
BLY93
bly89
BLY78
bly91
BLX65
bly93a
BFY 94 transistor
bly 78
BLW11
BLY88
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bly 2 10
Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz
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BFY90
O-117
T0-60CE
S0-104
SO-104
bly 2 10
BLW11
blx66
BFY90
uhf vhf amplifier
bly62
transistor zg
BLY53A
BLY78
BFy 90 transistor
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ali 3602
Abstract: AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v
Text: ELECTRONIC MEASUREMENTS INC. Instruction Manual for EXX Series 60 Watt DC Power Supply Models: EXX EXX EXX EXX 7-6 15-4 20-3 30-2 EXX 60-1 EXX 120-0.5 EXX 250-0.25 T M -6 0 0 0 -E M INSTRUCTION MANUAL ABOUT THIS MANUAL About This Manual This manual contains user information for the EXX Series DC power supply. It provides information about
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TM-6000-EM
DS127-DS129
PC-6802-F
ali 3602
AC digital voltmeter using 7107
104j capacitor
Y4W diode
y4w transistor
digital voltmeter using IC 7107
b082 op
s 2 umi 1A 250V
ali 3602 ic
MF CAPACITOR 100v
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AT-60500
Abstract: AVANTEK transistor AVANTEK AT60500 Avantek, Inc transistor J 4081 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AVANTEK oscillator
Text: AVANTEK SQE D INC AVAN TEK • OOGbSQ? A T60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Avantek Chip Outline1 Features • • • • 3 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.5 dB typical at 2.0 GHz
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AT-60500
310-371-8717or3lO-37l-8478
AVANTEK transistor
AVANTEK
AT60500
Avantek, Inc
transistor J 4081
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
AVANTEK oscillator
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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HFET-2202
Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
Text: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum
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HFET-2202
HFET-2202
NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE
HPAC-100A
S2112
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AVANTEK transistor
Abstract: No abstract text available
Text: A V A N T E K INC 20E 3> AVANTEK • UMlltt AT-60200 Up to 6 GHz Low Noise Silicon Bipolar Transistor Trans Chip T • • 3 M 5 “ Avantek Chip Outline' Features • • & Q00bS04 Low Bias Current Operation Low Noise Figure: 1.9 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz
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Q00bS04
AT-60200
310-371-a717or3
10-37l-8478
AVANTEK transistor
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AVANTEK oscillator
Abstract: Avantek S AT-21400 AVANTEK transistor equivalent io transistor 131-G
Text: A V A N T E K INC SDE D AVANTEK llinbt 00Qb4Sfl S AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor T -3 1 Avantek Chip Outline1 Features • • • • - l “ 7 Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs High S21 Gain: 9.5 dB Typical at 4 GHz
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00Qb4Sfl
AT-21400
ent03
AVANTEK oscillator
Avantek S
AVANTEK transistor
equivalent io transistor 131-G
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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motorola 7673 A
Abstract: LA 7673 motorola 7673 b Motorola 8039
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF957T1 The RF Line NPN Silicon Low Noise, High-Frequency Transistor Iq = 100 m A LO W NO ISE H IG H -FR E Q U EN C Y TR A N SIS TO R D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is
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MRF957T1
Collector-Em96
MRF957T1
motorola 7673 A
LA 7673
motorola 7673 b
Motorola 8039
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