BLY 33 TRANSISTOR Search Results

BLY 33 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BLY 33 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BLW24 Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92 Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V	OCR Scan	BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92	PDF
blw 30 or bfw 30 Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53 Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V	OCR Scan	O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53	PDF
BLY78 Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53 Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V	OCR Scan	BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53	PDF
BLW16 Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11 Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V	OCR Scan	BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11	PDF
BLY93A Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63 Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V	OCR Scan	BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63	PDF
BLY93 Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88 Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V	OCR Scan	BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88	PDF
BLY 33 transistor Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor Text: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .	OCR Scan	BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor	PDF
bly 2 10 Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz	OCR Scan	BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor	PDF
TRANSISTOR BJ 042 Abstract: No abstract text available Text: -Jolitron ÄTTÄIL© Devices. Inc. MEDIUM VOLTAGE, MEDIUM POWER CHIP NUM BER NPN EPI BASE POWER TRANSISTOR c rfl c 'l CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also available	OCR Scan	37mra) 305mm) 300pF 300pF 2N3716, 2N5303, 2N5881, 2N5882 TRANSISTOR BJ 042	PDF
5609 Abstract: 5609 transistor 2N6676 2N6677 2N6678 CCC6678 Text: 61 159 50 MICR OS EMI 02E 0 0 5 0 7 CORP/POWER T'33- 3 D DE jb llS ^ S O 0000507 5 \| 05 CCC6678 TECHNOLOGY 15 A, 650 V, NPN Power Transistor Chip • E pitaxial D iffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum Collector (Al-Ti-Ni-Au	OCR Scan	CCC6678 emitter-15-mil thickness-18 2N6676 2N6677 2N6678 5609 5609 transistor 2N6678 CCC6678	PDF
Untitled Abstract: No abstract text available Text: 8368602 SOLITRON DEVICES _ At 8 6 D 02 55 0 INC »F\|ñ3bñbDS 00D2S50 7 - 35 ~ 33 ELEMENT NUMBER 3 MEDIUM VOLTAGE, FAST SWITCHING MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 ,0 0 0 A Aluminum	OCR Scan	00D2S50 203mm) 40MHz 40MHz SDM3303; SDM3103	PDF
2N5872 Abstract: No abstract text available Text: de]ö3hflt,02 ~&i SOLITRON DEVICES INC üDDasflö t \ t ~-33-/7 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 À Aluminum FORMERLY 67 Collector: Polished Silicon	OCR Scan	203mm) 25MHz 25MHz 200pF 2N5872	PDF
Untitled Abstract: No abstract text available Text: FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)	OCR Scan	FRM9140D, FRM9140R, FRM9140H -100V, 300S1 O-204AA 100KRAD 300KRAD 1000KRAD	PDF
2n5882 Abstract: No abstract text available Text: 8368602 SOLITRON DEVICES INC °TS 95D 02 83 3 DE \|fl3bab0a 0DD2Ö33 M £ \ ¥ M ,© 1 MEDIUM VOLTAGE, MEDIUM POW ER Devices, Inc. CHIP NUMBER dTI IMPIM EPI BA SE POW ER TRANSISTOR x i1 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold	OCR Scan	305mm) 2n5882	PDF

Untitled Abstract: No abstract text available Text: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)	OCR Scan	FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD	PDF
LDR 03 Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12 Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren	OCR Scan		PDF
BUT11 equivalent Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS Text: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec	OCR Scan	flb55 BUT11 BUT11/A BUT11FI/AFI O-220 ISOWATT220 BUT11/FI BUT11A/AFI ISOWATT-220 BUT11 equivalent transistor t220 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS	PDF
ali 3602 Abstract: AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v Text: ELECTRONIC MEASUREMENTS INC. Instruction Manual for EXX Series 60 Watt DC Power Supply Models: EXX EXX EXX EXX 7-6 15-4 20-3 30-2 EXX 60-1 EXX 120-0.5 EXX 250-0.25 T M -6 0 0 0 -E M INSTRUCTION MANUAL ABOUT THIS MANUAL About This Manual This manual contains user information for the EXX Series DC power supply. It provides information about	OCR Scan	TM-6000-EM DS127-DS129 PC-6802-F ali 3602 AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v	PDF
Untitled Abstract: No abstract text available Text: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event	OCR Scan	FSS130D, FSS130R O-257AA 1-800-4-HARRIS	PDF
Untitled Abstract: No abstract text available Text: FSYA450D, FSYA450R Semiconductor D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	FSYA450D, FSYA450R 1-800-4-HARRIS	PDF
Untitled Abstract: No abstract text available Text: FSYA450D, FSYA450R Semiconductor March 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	FSYA450D, FSYA450R 1-800-4-HARRIS	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSJ264D, FSJ264R MIL-S-19500	PDF
Untitled Abstract: No abstract text available Text: m H EW LETT PACKARD AT-00500 Up to 4 Hz General Purpose Silicon Bipolar Transistor Chip Features • Chip Outline 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz • High Gain-Bandwidth Product: 9.0 GHz typical fr	OCR Scan	AT-00500	PDF

BLY 33 TRANSISTOR Search Results

BLY 33 TRANSISTOR Result Highlights (5)

BLY 33 TRANSISTOR Datasheets Context Search

BLW24

blw 30 or bfw 30

BLY78

BLW16

BLY93A

BLY93

BLY 33 transistor

bly 2 10

TRANSISTOR BJ 042

5609

Untitled

2N5872

Untitled

2n5882

Untitled

LDR 03

BUT11 equivalent

ali 3602

Untitled

Untitled

Untitled

Transistor 2SA 2SB 2SC 2SD

Untitled

Untitled