AQBF
Abstract: No abstract text available
Text: 0 38% Mesws. %% TOCOS AMERICA .INC. $&#% % Carbon film variable resistor @P+tlf#f% Customer Specification Number @+t#@% Customer Part Name rn+tSa"a%% Customer Yart Number %1f 85% TOCOS Part Name %+klfH%% TOCOS Specification Number RY -7 7 2 2 *blX€Xt##3f%
|
Original
|
RY-7722
AQBF
|
PDF
|
68HC11A8
Abstract: 68hc11 multiple byte transfer using spi 68HC11 M68HC11 X24F128 AN-945 AN9412 AN945
Text: Application Note AN94 Interfacing the X24F128 SerialFlash Memory to the Motorola 68HC11 Microcontroller by Jordon Inkeles, October 1996 This application note demonstrates how the Xicor X24F128 SerialFlash memory can be interfaced to the 68HC11 microcontroller family when connected as
|
Original
|
X24F128
68HC11
X24Fxxx
AN94-12
68HC11A8
68hc11 multiple byte transfer using spi
M68HC11
AN-945
AN9412
AN945
|
PDF
|
AN7610
Abstract: 68hc11 multiple byte transfer using spi x24f008 68HC11 68HC11A8 AN76 M68HC11 X24F016 X24F032 AN764
Text: Application Note AN76 Interfacing the X24F016/032/064 SerialFlash Memories to the Motorola 68HC11 Microcontroller by Ray Kahidi, October 1995 This application note demonstrates how the Xicor X24Fxxx family of SerialFlash memories can be interfaced to the 68HC11 microcontroller family when
|
Original
|
X24F016/032/064
68HC11
X24Fxxx
AN76-12
AN7610
68hc11 multiple byte transfer using spi
x24f008
68HC11A8
AN76
M68HC11
X24F016
X24F032
AN764
|
PDF
|
68HC11
Abstract: 68HC11A8 AN105 M68HC11 X24128 X24F128 AN-1052
Text: Application Note AN105 Interfacing the 400KHz X24320/640/128 Serial E2PROM to the Motorola 68HC11 Microcontroller by Jordon Inkeles, May 1997 This application note demonstrates how the Xicor 2 X24320/640/128 Serial E PROM can be interfaced to the 68HC11 microcontroller family when connected as
|
Original
|
AN105
400KHz
X24320/640/128
68HC11
AN105-12
68HC11A8
AN105
M68HC11
X24128
X24F128
AN-1052
|
PDF
|
68hc11 multiple byte transfer using spi
Abstract: X25Fxxx 68HC11A8 Application Note AN773 X25F008 X25F016 X25F064 1N4148 68HC11 AN77
Text: Application Note AN77 Interfacing the X25F008/016/032/064 SerialFlash Memories to the Motorola 68HC11 Microcontroller SPI Port by Ray Kahidi, October 1995 This application note demonstrates how the Xicor X25Fxxx family of SerialFlash memories can be interfaced to the 68HC11 microcontroller family when
|
Original
|
X25F008/016/032/064
68HC11
X25Fxxx
AN77-8
68hc11 multiple byte transfer using spi
68HC11A8
Application Note AN773
X25F008
X25F016
X25F064
1N4148
AN77
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX14663 Portable Medical Power Management Solution with Cable Detection General Description Benefits and Features The MAX14663 integrates a high-efficiency single-cell Li-ion switching charger targeted at space-limited portable applications with small batteries.
|
Original
|
MAX14663
MAX14663
MAX14663ETL+
T4055
|
PDF
|
schematic diagram 48v bldc motor speed controller
Abstract: irfb3306 smd diode marking BM 47 MAR 544 MOSFET TRANSISTOR TRANSISTOR SMD MARKING CODE lpw TMC603 Power MOSFET 50V 10A IN DPACK schematic diagram 48v dc motor speed controller marking code LPW SMD TRANSISTOR "Common rail"
Text: TMC603 DATA SHEET V. 1.06 / 26. Mar. 2009 1 TMC603 – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features
|
Original
|
TMC603
TMC603
schematic diagram 48v bldc motor speed controller
irfb3306
smd diode marking BM 47
MAR 544 MOSFET TRANSISTOR
TRANSISTOR SMD MARKING CODE lpw
Power MOSFET 50V 10A IN DPACK
schematic diagram 48v dc motor speed controller
marking code LPW SMD TRANSISTOR
"Common rail"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN
|
OCR Scan
|
|
PDF
|
BDY39
Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
Text: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1
|
OCR Scan
|
|
PDF
|
BD NPN transistors
Abstract: pro-electron BLX83 Scans-00147652 BD130
Text: r e » ? ©ättä[l® P R O -E L E C T R O INI P O W E R T R A N S IS T O R S DEVICE POLARITY TYPE IC(cont. MAX AMPS ic Devices. Inc. VCEO MAX VOLTS JiFE @ MIN/MAX VCE(sat)@ MAX/VOLTS ic AMPS It MIN(MHz) Px MAX. WATTS CA SE TYPE CHIP TYPE BD 130 BD 142
|
OCR Scan
|
|
PDF
|
SO-104
Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5
|
OCR Scan
|
BLW11
O-131
O-129
O-117
SO-104
blw 30 or bfw 30
BLW21
BLY 67
BLY-38
BLY34
bly 55
bly 63
BLY87
|
PDF
|
BLW24
Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V
|
OCR Scan
|
BLW24
O-1175
O-117
T0-60CE
S0-104
SO-104
BLW24
BLY38
BLY88
bly91
BLY-38
BLX66
bly power transistor
TRANSISTOR BFW 16
BLY36
Transistor BFw 92
|
PDF
|
BLW20
Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
Text: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V
|
OCR Scan
|
BLW20
32-UNC-2A-Thread
O-117
T0-60CE
S0-104
SO-104
BLW20
TRANSISTOR BFW 16
BLW24
BLW19
BLW11
BLX67
BLY93A
bly91
61 TRANSISTOR
BLY53A
|
PDF
|
BLY78
Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V
|
OCR Scan
|
BLW12
O-117
T0-60CE
S0-104
SO-104
BLY78
BLY87
bly91
BLY93A
TRANSISTOR BFW 11
Transistor BFX 90
BLY34
BLW12
BLY91A
BLY53
|
PDF
|
|
BLY93A
Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V
|
OCR Scan
|
BLW23
8/32-UNC-2A-Thread
O-117
O-117
T0-60CE
S0-104
SO-104
BLY93A
BLY78
BLY34
BLY97A
BLY-38
BLW11
BLY91
BLW25
BLW19
bly 63
|
PDF
|
BLW25
Abstract: bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
Text: BLW25 SIL IC O N NPN VH F POWER T R A N SIST O R High Gain Output for 13 V A M Applications 40 W a t 175 M H z M inim um Gain 7 dB. mechanical specifications absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .60 V
|
OCR Scan
|
BLW25
O-145
toxi175
O-117
T0-60CE
S0-104
SO-104
BLW25
bly91
BLY93
BLY78
BLY-38
BLY-53
BLW11
BLw vhf
BLY79
BLY88
|
PDF
|
BLY93
Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V
|
OCR Scan
|
BLW14
O-129
O-117
T0-60CE
S0-104
SO-104
BLY93
bly89
BLY78
bly91
BLX65
bly93a
BFY 94 transistor
bly 78
BLW11
BLY88
|
PDF
|
BFW 11 oa
Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
Text: BLW18 SILIC O N NPN VH F POWER T R A N S IST O R electrical characteristics at 25 °C case temperature unless otherwise noted PAR AM ETE R V IBR)CER lc = 50 m A , R b e = 1 0 Í2 L V CEO C o lle ctor-E m itte r Breakdown Voltage I q = 50 m A , Iß = o See N ote 1
|
OCR Scan
|
BLW18
VCB-13V,
O-117
T0-60CE
S0-104
SO-104
BFW 11 oa
bly78
BLW18
BLW11
bly92a
bly93a
BLY38
bly34
BLY60
BLY53
|
PDF
|
BLW16
Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V
|
OCR Scan
|
BLW16
O-117
T0-60CE
S0-104
SO-104
BLW16
BLW25
S0104
BLY78
BLY85
Transistor BFX 59
BFW 100 transistor
bly93a
BLY-38
BLW11
|
PDF
|
TRANSISTOR BFW 11
Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
Text: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C
|
OCR Scan
|
BLW13
O-117
T0-60CE
S0-104
SO-104
TRANSISTOR BFW 11
BLW11
BLW13
BLY92
BLX67
BLY34
BLY97
transistor BFW 10
BLY53A
BFy 90 transistor
|
PDF
|
LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
|
OCR Scan
|
|
PDF
|
BLW 12v
Abstract: TO-131 Package BLY85 BLW11 BLW17 BLY53 bly53a BLY 67 BLY60 BLX67
Text: BLW17 SIL IC O N NPN V H F POWER T R A N SIST O R 271 HIGH G AIN MEDIUM POWER VH F AM PLIFIER • • • • 2 W@ 175 MHz 13 dB Gain Stripline Package Interdigital Geometry mechanical specification absolute maximum ratings T Ca s e ~ 25 °C Collector-Base V o lta g e .36 V
|
OCR Scan
|
BLW17
BLW 12v
TO-131 Package
BLY85
BLW11
BLY53
bly53a
BLY 67
BLY60
BLX67
|
PDF
|
RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
|
OCR Scan
|
|
PDF
|
BLY 33 transistor
Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
Text: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .
|
OCR Scan
|
BLW11
O-117
T0-60CE
S0-104
SO-104
BLY 33 transistor
BLW11
BFW 100 transistor
BFY 52 transistor
bfw 11
BFy 90 transistor
Transistor BFX 59
transistor BFW 10
BLY 97 transistor
texas rf power transistor
|
PDF
|