BLS6G3135S-120 Search Results
BLS6G3135S-120 Price and Stock
Ampleon BLS6G3135S-120,112RF MOSFET LDMOS 32V SOT502B |
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BLS6G3135S-120,112 | Tray |
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BLS6G3135S-120,112 | 2 |
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Flip Electronics BLS6G3135S-120,112LDMOS POWER TRANSISTOR - Trays (Alt: BLS6G3135S-120,112) |
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BLS6G3135S-120,112 | Tray | 16 Weeks | 60 |
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BLS6G3135S-120 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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BLS6G3135S-120 |
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LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB | Original | |||
BLS6G3135S-120 |
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LDMOS S-Band radar power transistor | Original | |||
BLS6G3135S-120,112 |
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LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB; Package: SOT502B (LDMOST); Container: Blister pack | Original |