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    HMC3653LP3BE Analog Devices Linear Driver, Gain Block Visit Analog Devices Buy
    LTC6994CDCB-2#TRMPBF Analog Devices TimerBlox: Delay Block/ Deboun Visit Analog Devices Buy
    LTC6994HDCB-1#TRPBF Analog Devices TimerBlox: Delay Block/ Deboun Visit Analog Devices Buy
    LTC6994IS6-2#TRMPBF Analog Devices TimerBlox: Delay Block/ Deboun Visit Analog Devices Buy
    LTC6994CDCB-2#TRPBF Analog Devices TimerBlox: Delay Block/ Deboun Visit Analog Devices Buy
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    OMRON Electronic Components LLC BLOCK,(A)-C2U

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    Onlinecomponents.com BLOCK,(A)-C2U
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    Brady Worldwide Inc A5500-FLAG-BLOCK

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    Hirose Electric Co Ltd PRESS-BLOCK-A-01

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    Sprecher + Schuh ADD-TERMINAL-BLOCKS--#TB

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    Phoenix Contact BL2 MOUNTING BLOCK KIT

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    BLOCKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BT138-800G

    Abstract: No abstract text available
    Text: BT138-800G 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage


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    PDF BT138-800G O-220AB) BT138-800G

    TPDV640RG

    Abstract: TPDV840RG TPDV1240 TPDV1240RG high voltage triacs
    Text: TPDVxx40 40 A high voltage Triacs Features A2 • On-state current IT(RMS : 40 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 200 mA ■ Commutation @ 10 V/µs: up to 142 A/ms ■ Noise immunity: 500 V/µs ■ insulated package:


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    PDF TPDVxx40 E81734) TPDVxx40 TPDV640RG TPDV840RG TPDV1240RG TPDV1240 high voltage triacs

    capacitive discharge ignition

    Abstract: No abstract text available
    Text: BT151X-800C SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking


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    PDF BT151X-800C OT186A O-220F) capacitive discharge ignition

    ROADM JDSU

    Abstract: ROADM Polatis FC/SC PATCH CORD SINGLE MODE ooo switch rs232 protocol Transistor 5503 EIA-526-14A
    Text: Optical Switch Tray OST Optical Switch Tray The Polatis OST family of products set the industry benchmark for performance in a compact, fully non-blocking optical switch. The OST is an ideal platform for network-level switching, given its ultra-low loss, fast switch speed, and high reliability


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    PDF PROD-402-04-0-S ROADM JDSU ROADM Polatis FC/SC PATCH CORD SINGLE MODE ooo switch rs232 protocol Transistor 5503 EIA-526-14A

    RECTIFIER DIODE 1000A

    Abstract: 2596
    Text: Rectifier Diode SXXHN/HR300 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 300 A 471 A 5200 A 130.20 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS


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    PDF SXXHN/HR300 1300C June-2008 RECTIFIER DIODE 1000A 2596

    MT90812AL1

    Abstract: TGE-5 EB32
    Text: MT90812 Integrated Digital Switch IDX Advance Information Mar 2011 Features • • • • • • • • • • • • • • • • • • MT90812AP MT90812AL MT90812APR MT90812AP1 MT90812AL1 MT90812APR1 192 channel x 192 channel non-blocking switching


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    PDF MT90812 -27dB, MT90812AL1 TGE-5 EB32

    Untitled

    Abstract: No abstract text available
    Text: SB 1660 SCHOTTKY DIE SPECIFICATION General Description: 60 V 16 A 5Standard □Low VF, ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage


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    PDF SB1660 96mil)

    BT139

    Abstract: bt139-600 application circuit of BT139 bt139600 bt139 Application bt139 600
    Text: TO -22 0A B BT139-600 4Q Triac Rev. 05 — 24 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high


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    PDF BT139-600 771-BT139-600127 BT139-600 BT139 application circuit of BT139 bt139600 bt139 Application bt139 600

    BT138-600

    Abstract: No abstract text available
    Text: BT138-600 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage


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    PDF BT138-600 O-220AB) BT138-600

    ignitor

    Abstract: No abstract text available
    Text: MKP1V120 Series Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction


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    PDF MKP1V120 MKP1V120/D ignitor

    2N5064G

    Abstract: 2n5060 SCR 2N5060 2N5060G SCR 2N5060 applications
    Text: 2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.


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    PDF 2N5060 O-92/TO-226AA 2N5060/D 2N5064G SCR 2N5060 2N5060G SCR 2N5060 applications

    Untitled

    Abstract: No abstract text available
    Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


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    PDF BPV11F BPV11F 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm


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    PDF BPV10NF BPV10NF 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    MIMMD100E180X

    Abstract: E72873
    Text: MIMMD100E180X 1800V 100A Rectifier Module RoHS Compliant Features • Package with screw terminals · Isolation voltage 3000 V~ · Planar passivated chips · Blocking voltage up to 1800 V · Low forward voltage drop · UL registered E72873 Applications · Supplies for DC power equipment


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    PDF MIMMD100E180X E72873 50/60Hz MIMMD100E180X

    40N120

    Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
    Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


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    PDF 40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623

    MB16100

    Abstract: CX 1213 8TQ100S S5834 cx 3120
    Text: MB16100 SCHOTTKY DIE SPECIFICATION Revision 2 9/24/1999 General Description Low Ir 100V 15A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 50 mA Maximum Instantaneous Forward Voltage @ 15 Amperes, 25 0 @


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    PDF MB16100 8TQ100S S5834 MB16100 CX 1213 8TQ100S S5834 cx 3120

    capacitor wima mks 4

    Abstract: WIMA MKS 3 wima mks 4 polyester wima 0,047 mks 4 630 wo 400 WIMA mkp wima MKS-4 WIMA MKP 4 wima 2.2 uF WIMA MKS 4 wima 0.12 UF
    Text: D WIMA MKS 4 Metallized Polyester PET Capacitors PCM 7.5 mm to 37.5 mm Special Features Electrical Data ˜ High volume/capacitance ratio ˜ Self-healing ˜ According to RoHS 2002/95/EC Typical Applications For general DC-applications e.g. ˜ By-pass ˜ Blocking


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    PDF 2002/95/EC E12-values mm/20 capacitor wima mks 4 WIMA MKS 3 wima mks 4 polyester wima 0,047 mks 4 630 wo 400 WIMA mkp wima MKS-4 WIMA MKP 4 wima 2.2 uF WIMA MKS 4 wima 0.12 UF

    MB1045

    Abstract: MR2545CT MB104 MBR2535CT MBR3045CT s5633 MR2545
    Text: MB1045 SCHOTTKY DIE SPECIFICATION Revision 4 5/25/2000 General Description Low Ir 45V 10A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.2 mA Maximum Instantaneous Forward Voltage @ 10 Amperes, 25 0 @


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    PDF MB1045 MBR2535CT, MR2545CT, MBR3045CT S5633 MB1045 MR2545CT MB104 MBR2535CT MBR3045CT s5633 MR2545

    SB840

    Abstract: SR2040 SRA1020 SRA820 SRA840 SBG2030-2045CT 2045ct
    Text: SB840 SCHOTTKY DIE SPECIFICATION Revision 4 1/20/2001 General Description Std Vf 40V 8A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.3 mA Maximum Instantaneous Forward Voltage @ 5 Amperes, 25 0 @ @ 8 Amperes, 25


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    PDF SB840 SR2040, SRA1020, SB840, SRA820 SRA840, SR1620-SR1640, SBL2030-2045CT, SBG20302045CT, SBL2030-2045PT SB840 SR2040 SRA1020 SRA840 SBG2030-2045CT 2045ct

    BT151S

    Abstract: BT151S-500L BT151S-650R BT151S-500R BT151S-650L BT151S-800R
    Text: BT151S series L and R Thyristors Rev. 05 — 9 October 2006 Product data sheet 1. Product profile 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features • High thermal cycling performance ■ High bidirectional blocking voltage


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    PDF BT151S OT428 BT151S-500L/R) BT151S-650L/R) BT151S-800R) BT151S-500L BT151S-650R BT151S-500R BT151S-650L BT151S-800R

    tr8c

    Abstract: TMS28F200
    Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture


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    PDF TMS28F20 TMS28F200BZB 8-BIT/131072 16-BIT 96K-Byte 128K-Byte 16K-Byte 28F200B2x70 28F200BZX80 28F200BZX90 tr8c TMS28F200

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


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    PDF TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent

    TIC64

    Abstract: TIC62 2N5060 TIC60 thyristor+st+103
    Text: TYPES 2N5060 THRU 2NS064. TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORSt 800 mA DC • 30 thru 200 VOLTS 03 H c-< rr* 2 m mw H to Z S O S mechanical data These thyristors are encapsulated in a plastic com pound specifically designed fo r this purpose, using a highly


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    PDF 2N5060 2NS064. TIC60 TIC64 -202C 2NS060 2N5061 TIC62 thyristor+st+103

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCR12/D SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information 'Motorola preferred devices Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 12 AMPERES RMS 600 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor


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    PDF MCR12/D MCR12 T0-220AB