SR-4 STRAIN GAGES
Abstract: vishay sr4 BLH sr-4 BLH, SR4 FAE-03W-12SX fAE06 FAE-25-100SX FAE-12-35SX BLH transducer Strain Gages
Text: SR-4 Strain Gages Vishay BLH FAE Constantan Foil, Polyimide Carrier Series Strain Gages The complete range of Vishay BLH SR-4® strain gages and installation accessories are now a part of the extensive line of Vishay measurement products. And, while many similar Vishay Micro-Measurements strain gages and installation accessories
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FAET-12A-12SX
FAET-12A-35SX
FAE-12S-12SX
FAE-12S-35SX
FAE-06S-12SX
FAE-06S-35SX
FAER-25B-12SX
FAER-25B-35SX
FAER-12B-12SX
FAER-12B-35SX
SR-4 STRAIN GAGES
vishay sr4
BLH sr-4
BLH, SR4
FAE-03W-12SX
fAE06
FAE-25-100SX
FAE-12-35SX
BLH transducer
Strain Gages
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SR-4 STRAIN GAGES
Abstract: FAE-25-12SX FAE-12-12SX
Text: SR-4 Strain Gages Micro-Measurements FAE Constantan Foil, Polyimide Carrier Series Strain Gages The complete range of BLH SR-4® strain gages and installation accessories are now a part of the extensive line of measurement products. And, while many similar Micro-Measurements strain gages and installation accessories are also available, our
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22-Feb-10
SR-4 STRAIN GAGES
FAE-25-12SX
FAE-12-12SX
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SR-4 STRAIN GAGES
Abstract: vishay sr4 PS-2010T BLH dxt-15 ps2010t BLH transducer dxt-40 ast 3p AST 3P, Transmitter design of 4-20mA transmitter for a bridge type
Text: Model HTK Vishay BLH Web Tension Measurement Module FEATURES • Full Wheatstone bridge construction with temperaturecompensated, Vishay SR-4 foil strain gages • Easy retrofit with existing machine pillow blocks • 100% stainless steel construction • IP67/NEMA 4 environmental sealing
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IP67/NEMA
08-Apr-05
SR-4 STRAIN GAGES
vishay sr4
PS-2010T
BLH dxt-15
ps2010t
BLH transducer
dxt-40
ast 3p
AST 3P, Transmitter
design of 4-20mA transmitter for a bridge type
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mitsubishi ordering information
Abstract: HN29VB800 HN29VB800R-10 HN29VB800T-10 HN29VB800T-12 HN29VT800 HN29VT800T-10 HN29VT800T-12 Block-18 Hitachi DSA00108
Text: HN29VT800 Series, HN29VB800 Series 1048576-word x 8-bit / 524288-word × 16-bit CMOS Flash Memory ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
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HN29VT800
HN29VB800
1048576-word
524288-word
16-bit
ADE-203-781A
8-bit/512-kword
mitsubishi ordering information
HN29VB800R-10
HN29VB800T-10
HN29VB800T-12
HN29VT800T-10
HN29VT800T-12
Block-18
Hitachi DSA00108
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HN29WB800
Abstract: HN29WB800T-10 HN29WB800T-12 HN29WB800T-8 HN29WT800 HN29WT800T-10 HN29WT800T-12 HN29WT800T-8 Hitachi DSA00108
Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word × 16-bit CMOS Flash Memory ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
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HN29WT800
HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537A
8-bit/512-kword
HN29WB800T-10
HN29WB800T-12
HN29WB800T-8
HN29WT800T-10
HN29WT800T-12
HN29WT800T-8
Hitachi DSA00108
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BLH load cell
Abstract: BLH sr-4 mitsubishi 32 pin SOP mitsubishi thyristors mitsubishi ordering information 1. Mobile Computing block diagram BLH load cell controller HN29WB800 HN29WT800 HN29WT800T-8
Text: HN29WT800 Series,HN29WB800 Series 1048576-Word x 8-bit / 524288-word x 16-bit CMOS Flash Memory ADE-203-537 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (D Ivided bitline NOR) type memory cells, that realize programming and
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HN29WT800
HN29WB800
1048576-Word
524288-word
16-bit
ADE-203-537
8-bit/512-kword
BLH load cell
BLH sr-4
mitsubishi 32 pin SOP
mitsubishi thyristors
mitsubishi ordering information
1. Mobile Computing block diagram
BLH load cell controller
HN29WT800T-8
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BA100 diode
Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
Text: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)
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K5C6417YT
4Mx16)
1Mx16)
81-Ball
80x11
08MAX
BA100 diode
BA133 diode
diode ba102
SAMSUNG MCP
BA102 diode
BA102
bufer
BA114
BA122
BA125
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BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance
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K5C6481NT
4Mx16)
512Kx16)
512Kx10
81-Ball
80x11
BA100 diode
BA102
ba107
Samsung MCP
BA125 Diode
diode ba102
BA134
BA100
BA106
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transistor sr61
Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K5T6432YT
4Mx16)
2Mx16)
81-Ball
80x11
transistor sr61
BA107
transistor BA29
BA27 chip transistor
BA106
BA99
SAMSUNG MCP
A21-A7
transistor ba31
ba30 transistor
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samsung date code decorder
Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark
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KBA0101A0M
KBA0201A0M
KBA0301A0M
KBA0401A0M
4Mx16)
2Mx16)
512Kx16)
LIM-011025
samsung date code decorder
SAMSUNG MCP
transistor sr61
transistor BA29
BA102
BA127 Diode
MITSUBISHI SR-40
UtRAM Density
samsung NAND memory
nand sdram mcp
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NFE 02 352
Abstract: TDA 1751 tea 6200 10 35L W1 KSA 1102 TDA 7325 68 20L E55-E56 17 23 000 4102 smd 1302 BP
Text: ALUMINUM ELECTROLYTIC CAPACITORS LIST OF PRODUCTS Radial APV ARV AXV ASV Upgrade AXA Upgrade ASA Upgrade Vertical type, 125℃, Low ESR 125℃ Vertical type, StableLeakageCurrentatSV afterReflow 105℃ Vertical type, 105℃, Super Low ESR 105℃ Vertical type, 105℃, Low ESR
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000hrs
NFE 02 352
TDA 1751
tea 6200
10 35L W1
KSA 1102
TDA 7325
68 20L
E55-E56
17 23 000 4102
smd 1302 BP
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Untitled
Abstract: No abstract text available
Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash
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HN29WT800
HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537
8-bit/512-kword
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65k5
Abstract: 6n53
Text: ÜEHTOß PENTODE 6Ht53n OBIIIHE CBE^EHHH GENERAL BblCOKOHaCTOTHblH LUHpOKOnOJIOCHMH neHTOA 65K53IT npeflH a3H aH eH a n z ycwjieHHH H anpH H cem w . The wide-band high-frequency 65K53II pentode has been designed for voltage amplification. Cathode: indirectly heated, oxide-coated.
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65K53IT
65K53II
65k5
6n53
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M29F800A3BT12
Abstract: M29F800A3BR10 M29F800A3BR80
Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 8M CMOS Flash Memory The M29F800A3 is a 3.3 V high speed 8,388,608-bit CMOS Boot Block Flash Memory suitable for use in systems such as mobile, personal computing, and communication products.
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M29F800A3/D
M29F800A3
608-bit
48-pin
M29F800A3C
RMFAX09email
M29F800A3BT12
M29F800A3BR10
M29F800A3BR80
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Untitled
Abstract: No abstract text available
Text: _ LT1024 / t u i c a b TECHNOLOGY Dual, Matched Picoampere, Microvolt Input, Low Noise Op Amp FCHTURCS DCSCRIPTIOn • Guaranteed Offset Voltage 50fiM Max. ■ Guaranteed Bias Current 120pAMax. 25°C 700pAMax. -5 5 °C to 125°C 1.5/iV/°CMax.
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LT1024
LT1024
ro00PSI
14-Lead
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M29F800A3BT12
Abstract: m29f800a3br 29F800A
Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max
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M29F800A3/D
M29F800A3--
M29F80QA
M29F800A3-12
M29F800A3
M29F800A2
48-Pin
M29F800A3U
M29F800A3B
M29F800A3BT12
m29f800a3br
29F800A
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Untitled
Abstract: No abstract text available
Text: IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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IBM0164165B
IBM0164165P
104ns
128ms
436mW
000S37fl
128ms
140ma
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Untitled
Abstract: No abstract text available
Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase
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HN29WT800/HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537
HN29WT800
HN29WB800
8-bit/512-kword
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29F800A
Abstract: No abstract text available
Text: Order this document by M29F800A2/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A2 Advance Information 8M CMOS Flash Memory The M29F800A2 is a 3.0 V high speed 8,388,608-bit CMOS Boot Block Flash Memory suitable for use in systems such as mobile, personal computing, and
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M29F800A2/D
M29F800A2
M29F800A2
608-bit
48-pin
29F800A
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Untitled
Abstract: No abstract text available
Text: Order this document by M28F800A2/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M28F800A2 Advance Information 8M CMOS Flash Memory Background Operation The M28F800A2 is a 3.3 V-read / 5 V-program/erase, high speed 8,388,608 bit CMOS boot-block flash memory suitable for mobile and
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M28F800A2/D
M28F800A2
M28F800A2
48-pin
M28F800A2-12
M28FB00A2/D
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4B000H
Abstract: No abstract text available
Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29W T800 Series, HN29W B800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase
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HN29WT800
HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537A
HN29W
8-bit/512-kword
4B000H
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MO-142DD
Abstract: No abstract text available
Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Senes are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase
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OCR Scan
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PDF
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HN29WT800
HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537A
8-bit/512-kword
MO-142DD
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Untitled
Abstract: No abstract text available
Text: HN29WT800 Series,HN29WB800 Series 1048576-Word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS
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OCR Scan
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HN29WT800
HN29WB800
1048576-Word
524288-word
16-bit
ADE-203-537
8-bit/512-kword
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an8040
Abstract: IC/T800
Text: MITSUBISHI LSIs M6MFB/T08S2TP 8388608-BIT 1 M x 8-BIT/512k x 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2097152-BIT (256k x 8-BIT) CMOS STATIC RAM MCP (Multi Chip Package) DESCRIPTION FEATURES The MITSUBISHI M6MFB/T08S2TP is a Multi Chip Package (MCP) that contents 8-Mbit Flash memory and
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M6MFB/T08S2TP
8388608-BIT
8-BIT/512k
16-BIT)
2097152-BIT
M6MFB/T08S2TP
82-pin
bytes/524288
M5M29FB/T800)
M5M5V208)
an8040
IC/T800
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