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    BLF7G15LS Price and Stock

    Ampleon BLF7G15LS-200,112

    RF MOSFET LDMOS 28V SOT502B
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    Ampleon BLF7G15LS-200,118

    RF MOSFET LDMOS 28V SOT502B
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    Ampleon BLF7G15LS-300P,118

    RF MOSFET LDMOS 28V SOT539B
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    Ampleon BLF7G15LS-300P,112

    RF MOSFET LDMOS 28V SOT539B
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    BLF7G15LS Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G15LS-200 NXP Semiconductors RF power transistor for leading performance in 1.5 GHz LTE basestations Original PDF
    BLF7G15LS-200,112 NXP Semiconductors BLF7G15LS-200 - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G15LS-200,118 NXP Semiconductors BLF7G15LS-200 - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G15LS-300P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G15LS-300P,112 NXP Semiconductors BLF7G15LS-300P - Power LDMOS transistor, SOT539B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G15LS-300P,118 NXP Semiconductors BLF7G15LS-300P - Power LDMOS transistor, SOT539B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF

    BLF7G15LS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLF7G15LS-200 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G15LS-200

    Untitled

    Abstract: No abstract text available
    Text: BLF7G15LS-300P Power LDMOS transistor Rev. 2 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF7G15LS-300P

    RO4350 properties

    Abstract: RO4350 BLF7G15L-200 800B 15085
    Text: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF7G15LS-200 RO4350 properties RO4350 BLF7G15L-200 800B 15085

    Untitled

    Abstract: No abstract text available
    Text: BLF7G15LS-300P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G15LS-300P

    Untitled

    Abstract: No abstract text available
    Text: NXP 1.4 to 1.7 GHz RF power transistor BLF7G15LS-200 RF power transistor for leading performance in 1.5 GHz LTE basestations Optimized for 1.5 GHz LTE/W-CDMA applications and built in rugged Gen7 LDMOS, this 28 V ceramic transistor delivers best-in-class efficiency in a symmetrical Doherty configuration.


    Original     		PDF BLF7G15LS-200 BLF7G15LS

    800B

    Abstract: RO4350
    Text: BLF7G15LS-300P Power LDMOS transistor Rev. 2 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF7G15LS-300P 800B RO4350

    Untitled

    Abstract: No abstract text available
    Text: BLF7G15LS-200 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G15LS-200

    JESD625-a

    Abstract: 800B RO4350
    Text: BLF7G15LS-300P Power LDMOS transistor Rev. 1 — 21 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF7G15LS-300P JESD625-a 800B RO4350

    BLF7G15L-200

    Abstract: RO4350 properties 800B RO4350 BLF7G15LS-200
    Text: BLF7G15LS-200 Power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF7G15LS-200 BLF7G15L-200 RO4350 properties 800B RO4350 BLF7G15LS-200

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


    Original     		PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


    Original     		PDF 26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    BGA7133

    Abstract: BGA7130 BGA7203 qubic4 BLF7G22-130 BLF6G21-10G SOT502 BLF6G22-130 BLF7G22LS-200 Evaluation board BGA7124
    Text: Your partner in Mobile Communication Infrastructure design Innovative, High Performance RF solutions for wireless infrastructures High Performance RF Looking for a partner who can help you meet the challenges of basestation design ? As a global leader in RF technology and component design, NXP Semiconductors offers a broad portfolio of


    Original     		PDF HTQFP80 12x12 DAC1001D125 10-bit LQFP48 BGA7133 BGA7130 BGA7203 qubic4 BLF7G22-130 BLF6G21-10G SOT502 BLF6G22-130 BLF7G22LS-200 Evaluation board BGA7124

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF