Untitled
Abstract: No abstract text available
Text: bbE T> niCROüJAVE TECHNOLOGY • bl24100 QGGGBMS 71b « l IR li lV MwT-0208-101DG M m 2-8 GHz MMIC AMPLIFIER MODULE i MICROWAVE TECHNOLOGY 4 2 6 8 S olar W a y Frem ont, CA 9 4 5 3 8 5 1 0 -6 5 1 -6 7 0 0 F A X 5 1 0 -6 5 1 -2 2 0 8 28 dB TYPICAL SMALL SIGNAL GAIN
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bl24100
MwT-0208-101DG
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SU25
Abstract: SU50B10LS
Text: MICROWAVE TECHNOLOGY bb E D • bl241DD DQQD4E1 lb 3 HMRIilV SST SERIES SU/S VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE
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bl241DD
10MHz-500MHz
BU120010LS
SU25
SU50B10LS
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MwT-173
Abstract: MWT-17
Text: MICROWAVE V bhE D TECHNOLOGY j • b l^ M lD D □□□□25b U IIRIilV MwT -1 F T M U =103 ■ 12 GHz High Gain GaAs FET . MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • 10 dB GAIN AT 12 GHz • EXCELLENT FOR FEEDBACK AMPLIFIER
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-F20-
MwT-173
MWT-17
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Untitled
Abstract: No abstract text available
Text: NICROUAVE bbE D TECHNOLOGY • bl541DD □□□□552 T75 HMRIilV MwT - H4 W 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — t50l— • 0.9 dB NOISE FIGURE AT 12 GHZ
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bl541DD
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Untitled
Abstract: No abstract text available
Text: M ic r o W ave T MPS-093011 LINEAR AMPLIFIER MODULE echnology FEATURES APPLICATIONS • • • • • • • • • • • • • Covers Typical Cellular Frequencies Frequency Range of 800 MHz to 1000 MHz Single Positive Supply Operation 1 W Output Power typical
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MPS-093011
MPS-093011
RO-3003
MPS-093011-85
MPS-093011-86
bl24100
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Untitled
Abstract: No abstract text available
Text: niCROIilAVE TECHNOLOGY bbE D • blZHlOD □□□□37T OT^ «MRÜIV MwT-0618-102DG 6-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 15.0 dB TYPICAL SMALL SIGNAL GAIN ' 1 9:1 t y p ic a l VSWR
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MwT-0618-102DG
MwT-0618-102G-GFP
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Untitled
Abstract: No abstract text available
Text: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o lo g y +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH n P J — ^ mm iVYi
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MwT-13
L-136-J
MwT-13
MwT-13HP
bl24100
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT
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1241DD
18GHz
MwT-12
-F94-
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Untitled
Abstract: No abstract text available
Text: MICROlilAVE TECHNOLOGY bbE D • hlEMlOO G0GG272 Öh3 «MRlilV M w T - A7 18 GHz High Gain, Low Noise GaAs FET MicroWave Technology r i 4268 solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r» i *+ r- • { \ vj L U L * • HIGH AVAILABLE GAIN W HEN BIASED FOR LOW -NOISE
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G0GG272
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SLAM0122
Abstract: SLAM-0122
Text: MICROÜJAVE TECHNOLOGY y bbE D ' . 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 + I • 50 WATT ULTRA LINEAR OPERATION 11.05T z n ° 1/TI D2 SL *M 01 IG1 T • +58 dBm TOIP (THIRD ORDER INTERCEPT • PUSH-PULL DEVICE 0.39 (9.9) 22 • BROADBAND (2 TO 32 MHz)
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000QH15
SLAM-0122
bl24100
W/34dBm
0W/47dBm
20MHz.
SLAM0122
SLAM-0122
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