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Text: •.'MICRON T E C H N O L O G Y INC 3ÔE » bl11541 GDO^bOb 4 ■ ■ FIRN PRELIMINARY 7 ^ -2 3 -3 7 VRAM 128K X 8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High-performance CMOS silicon gate process
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bl11541
275mW
512-cycle
T-46-23-37
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Untitled
Abstract: No abstract text available
Text: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions
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256KX16DRAM
MT4C16257/9
MT4C16258/9
512-cyde
MT4C16256/7/8/9
MT4C1C25OTV9L
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