playstation 2 power supply
Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO
Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Sony, Playstation, Nintendo, Gamecube, Microsoft and Xbox are trademarks and property of their respective owners. Semiconductors ASPD / page:2 DMI – BL Power Technical • CPU: Sony "Emotion Engine”, 128 bit, 300 MHz
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OT223
BSH105
BSH103
PHP225
PHC21025
playstation 2 power supply
playstation 1 power supply
SONY PLAYSTATION 3
sony playstation 3 power supply
sony playstation 1 power supply
sony playstation 2 power supply
PLAYSTATION 3 power supply
sony playstation 2
graphics synthesizer
IBM GEKKO
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bridge rectifier 2A 30v
Abstract: 5.1V SOD87 sod64 dual diode Schottky Diode 30V 1A SOD87 5V1 zener philips 1PS74SB43 220v 2a diode bridge philips zener SOD87 Schottky Diode 40V sod87
Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Components in a DVD player/recorder: • Power supply • Audio/video processing board includes control • DVD (reader or reader/writer) engine Semiconductors ASPD / page:2 DMI – BL Power
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BYD13J
1N4005ID
SI4466DY
BSP030
PHN103T
BSH108
BSP100
PHN210T
PHN203
SI4420DY
bridge rectifier 2A 30v
5.1V SOD87
sod64 dual diode
Schottky Diode 30V 1A SOD87
5V1 zener philips
1PS74SB43
220v 2a diode bridge
philips zener
SOD87
Schottky Diode 40V sod87
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1N4000-series
Abstract: BL 05A 1N4000 1n5817 sod323 BSH103 ZENER 5V1 1n4000 sERIES DIODES BZX584 Series BSH105 5.1 amplifier IC
Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Semiconductors Johan de Jonge / page:2 DMI – BL Power Application: DECT Basestation Vmains Netadapting 5.10V AC/DC Power Supply ROM/Flash 3V DC/DC ARM/DSP 5V Speech Codec Line Interface
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BYG90-series
BSN20
BSH103
BSH105
BSH108
PBSS5140D/T/U/V
OT457/SOT23/
OT323/SOT666
PBSS3515VS
OT666
1N4000-series
BL 05A
1N4000
1n5817 sod323
BSH103
ZENER 5V1
1n4000 sERIES DIODES
BZX584 Series
BSH105
5.1 amplifier IC
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BSH108
Abstract: nokia rf power amplifier transistor Schottky Diode 40V 2A TOPSWITCH battery charger TRANSISTOR BL 100 BL 05A TOPSWITCH battery charger 2A BSH103 BSH111 1PS74SB43
Text: Discretes and MultiMarket ICs DMI – BL Power 08/08/2002 DMI – BL Power Application: Mobile Phone Display LCD Module LCD driver Charger Power Supplies Aux ADCs Smartcard & SIM interface PMU Reset On/Off Analog Audio Codec Hands free GP-IC Semiconductors
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BYD37J
BYG60J
BSH103
BSH111
PBSS5140D
BSH105
BSH112
PBSS5320D
BSH108
BSH114
BSH108
nokia rf power amplifier transistor
Schottky Diode 40V 2A
TOPSWITCH battery charger
TRANSISTOR BL 100
BL 05A
TOPSWITCH battery charger 2A
BSH103
BSH111
1PS74SB43
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Schottky Diode 40V 5A bridge
Abstract: 200v 3A schottky Schottky Diode 40V 5A rectifier bridge 100v 5a BYQ28X200 rectifier bridge 100v 3a RECTIFIER DIODES PHILIPS DATA BOOK flyback transformer philips bridge rectifier 1A Schottky Diode 40V sod87
Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power • Power supplies from some 5 to 80W • Main use: • Laptop/notebook computers • PC peripheral • Networking components • LCD monitors • Generally universal mains input: • 100 - 240 VAC 90 - 264 VAC
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BYD13J
1N4005ID
BYD17J
BYG50J
BYW54
OD124)
OT186
BYD33J
BYD37J
BYG70J
Schottky Diode 40V 5A bridge
200v 3A schottky
Schottky Diode 40V 5A
rectifier bridge 100v 5a
BYQ28X200
rectifier bridge 100v 3a
RECTIFIER DIODES PHILIPS DATA BOOK
flyback transformer philips
bridge rectifier 1A
Schottky Diode 40V sod87
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Untitled
Abstract: No abstract text available
Text: DI ODE SOLUTI ONS 17 Years of excellence Commerci alAvi a t i on SMCDi odeSol ut i onswa sc r e a t e di n1 997t os e r v et heHi ghRe l i a bi l i t yne e dsofourc us t ome r s . Dur i ngt ha tt i meweha v ea dde dt hehi ghe s tqua l i t ys t a nda r dsa
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1L1117-xx
Abstract: 1L1117 3.3 0A85 il1117 1L1117 1.8 1L1117 3.3V 1L1117 SMD L4 Regulator SOT-223 il1117 ad il1117-5
Text: TECHNICAL DATA IL1117-xx 1.0A Low Dropout Positive Voltage Regulator Features • Adjustable and Fixed of 1.2, 1.25, 1.5, 1.8, 2.5, 2.85, 3.3, 5.0V • Space saving SMD types of SOT-223 • 1.2V Drop-out Voltage • 1.0A Output Current • Line Regulation Typically at 0.2% max
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IL1117-xx
OT-223
O-220
O-252
IL1117
TheIL1117isavailableinsevenfixedvoltage,
1L1117-xx
1L1117 3.3
0A85
1L1117 1.8
1L1117 3.3V
1L1117
SMD L4 Regulator SOT-223
il1117 ad
il1117-5
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power 22E
Abstract: 100KPF ntc 10K e-bike Hall 22e NTC thermister 100K 1000uf/63v battery ebike SCK thermister fqp85n06
Text: 4 3 2 VCC_5V D R3 4.7 K 1 R4 4.7 K HS3 HS2 HS1 C2 100pF C3 100pF 1 PhaseA Phase A D J3 J2 1 3 2 1 J4 5 4 3 2 1 J1 TP1 Throttle R1 100E R2 4.7 K VREF 2 VCC_3V3 1 1 5 Throttle Phase B J5 C1 0.01uF Throttle Pot PhaseB 1 C4 100pF PhaseC Phase C HALL Sensor Connection to Motor
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100pF
Z8FMC16100
AN0260
1N4002
LM1117
V/SOT223
LM1117/TO
power 22E
100KPF
ntc 10K
e-bike
Hall 22e
NTC thermister 100K
1000uf/63v
battery ebike
SCK thermister
fqp85n06
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Untitled
Abstract: No abstract text available
Text: • bbSB^Bl DDESSMfl ^5T H A P X N AUER PHILIPS/DISCRETE BSP206 b7E D ; v P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
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BSP206
OT223
Q02S551
M0A366
MCA367
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors fl i bbSa^Bl 0 D3 2 EQ3 1 7 S APX Product specification PNP 4 GHz wideband transistor X3A-BFQ32 crystal ^ N Afl ER PHILIPS/DISCRETE b*lE D DESCRIPTION M ECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole
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X3A-BFQ32
BFQ32S
BFQ149
BFG31
OT223)
thick34)
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lc04a
Abstract: No abstract text available
Text: SM-8 DUAL NPN M EDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ISSUE 1 - NOVEMBER 1995 ci c n c ,Œ C 2 [IX.c»r r IE 3 in Bl H D b2 e, = n e* SM-8 8 LEAD SOT223 PARTM ARKING DETAIL - T694 ABSOLUTE MAXIMUM RATINGS. PARAMETER C o lle cto r-B a se V o lta ge SYM BO L
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ZDT694
OT223)
Z0T694
lc04a
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BDS78
Abstract: No abstract text available
Text: Philips Components Data sheet status P r o d u c t s p e c ific a t io n date of issue A p ril 1991 BDS202/204/78 PN P silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors in a miniature SMD envelope
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BDS202/204/78
OT223
OT223)
BDS201/203/77.
BDS202
BDS204
BDS78
0034b04
003MbDS
BDS78
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Untitled
Abstract: No abstract text available
Text: C A I D I —111 O June 1997 PRELIMINARY SEM ICONDUCTO R tm FDC6301N Dual N-Channel , Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density
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FDC6301N
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Untitled
Abstract: No abstract text available
Text: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features
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BFG35
OT223
BFG55.
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Untitled
Abstract: No abstract text available
Text: TAIWAN % TS1086 SEMICONDUCTOR 1.5A Low Dropout Positive Voltage Regulator b RoHS f C O M P L IA N C E TO-220 TO-263 D2PAK) TO-252 (DPAK) SOT-223 P in D B fin itio n : 2 1. Fixed/Adj 2 . O u tp u t e• tmi m 12 3 3. Input Pin 2 connect to heat sink & * m,
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TS1086
O-220
O-263
O-252
OT-223
TS1086
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BSP121
Abstract: No abstract text available
Text: • b b S a ^ l 0025510 ^21 BiAPX BSP121 b?E J> N AMER PHILIPS/DISCRETE N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and
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BSP121
OT223
bbS3T31
BSP121
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SOT89 MARKING CODE 3D
Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK
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OT143,
OT223
OT323
PXTA27
BCX51
BCW60A
BCW60B
BCX51-10
BCW60C
BCX51-16
SOT89 MARKING CODE 3D
sot89 mark code AE
sot23 mark code AE
3D sot23
SOT89 marking cec
SOT89 MARKING CODE 43
marking 1p sot23
sot23 p04 marking
marking P1R
SOT89 MARKING 5G
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TRIAC BT134W-500
Abstract: bt134 phase control Triac bt134 500e BT134 BT134W BT134W-500 W500E 600ebt134 BT134W-500E/600E
Text: bbS3131 DDESb7S flbT IAPX Philips Semiconductors Product spécification Triac BT134W series N AUER PHILIPS/DISCRETE b?E D« GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in SOT223 envelopes suitable for surface mounting. They are intended for
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bbS3131
BT134W
OT223
BT134W-
OT223
AbsoBT134W
TRIAC BT134W-500
bt134 phase control
Triac bt134 500e
BT134
BT134W-500
W500E
600ebt134
BT134W-500E/600E
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PN2222A le
Abstract: oKH sot-23 PZT2222A on MMBT2222AI MMPQ
Text: PN2222AI MMBT2222AI MMPQ2222 I NMT2222 I PZT2222A D iscrete POWER & Sig n a l Technologies Na t ion a I S e m i c o n d u c t o r ' PN2222A PZT2222A MMBT2222A SOT-23 B SOT-223 Mark: 1P NMT2222 MMPQ2222 SOT-6 SOIC-16 B1 M a r i e .1 B NPN General Purpose Amplifier
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PN2222AI
MMBT2222AI
MMPQ2222
NMT2222
PZT2222A
PN2222A
MMBT2222A
OT-23
OT-223
PN2222A le
oKH sot-23
PZT2222A on
MMPQ
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BZV90
Abstract: BZV90-C24
Text: • 1^53^31 0Q2S7S1 SOb « A P X N AMER PHILIPS/DIS CRET E BZV90 SERIES b?E D SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, In a SOT223 plastic envelope, intended fo r stabilization applica tions in thick and th in -film circuits.
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BZV90
OT223
OT223.
10ing
00257S1
BZV90-C24
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PNP marking NY sot-223
Abstract: 13004-v LDO marking code AL transistor 9005
Text: $ TAIW AN TS9005 S E M IC O N D U C T O R 600mA Low Noise CMOS LDO b RoHS C O M P L IA N C E SO T-89 SO T-223 2 Pin D s fin itio n : Pin D efinition: 1. Input 1. G round 2. Input 3. Output 2. G round 3. O utpu t 1 2 3 1 2 3 General Description The T S 9005 series is a positive voltage regulator developed utilizing C M O S technology featured low quiescent
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TS9005
600mA
T-223
PNP marking NY sot-223
13004-v
LDO marking code AL
transistor 9005
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1117B
Abstract: S1117B AL MARKING
Text: s TAIW AN TS1117B SEMICONDUCTOR 800mA Low Dropout Positive Voltage Regulator b RoHS C O M P L IA N C E T O -2 5 2 S O T -2 2 3 TO -22Û 2 S O P -8 P in D e fin itio n : P in D e fin itio n : 1. 2. 3. 4. 1 . F ix e d / A d j 2. Output tab) & & 123 12 3. Input
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TS1117B
800mA
1117B
S1117B
AL MARKING
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NT 407 F TRANSISTOR
Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.
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BFG198
OT223
MS8002
OT223.
NT 407 F TRANSISTOR
Philips CD 303
2222 595
npn 2222 transistor
BFG198
MS8002
0450 7N
2222 443
TRANSISTOR D 471
MRA transistor
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A 42 E
Abstract: NDT452AP
Text: June 1996 FAIRCHILD SEM ICONDUCTO R T M NDT452AP P-Channel Enhancement Mode Field E X Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDT452AP
OT-223
A 42 E
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