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    BJT TRANSISTOR FOR SMALL SIGNAL AMPLIFIER Search Results

    BJT TRANSISTOR FOR SMALL SIGNAL AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    BJT TRANSISTOR FOR SMALL SIGNAL AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    TRANSISTORS BJT list

    Abstract: bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers input output bjt npn transistor pnp germanium low power bjt pnp germanium bjt jfet discrete differential transistor pnp germanium small signal bjt power BJT PNP
    Text: Application Report SLOA026A - April 2000 Understanding Basic Analog – Active Devices Ron Mancini Mixed Signal Products ABSTRACT This application report describes active devices and their use as the basic building blocks of all electronic equipment. Active devices, coupled with passive devices, create the


    Original     		PDF SLOA026A TRANSISTORS BJT list bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers input output bjt npn transistor pnp germanium low power bjt pnp germanium bjt jfet discrete differential transistor pnp germanium small signal bjt power BJT PNP

    Untitled

    Abstract: No abstract text available
    Text: EE 330 Spring 2014 Laboratory 8: Semiconductor Parameter Measurements Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second objective is to


    Original     		PDF 2N4400 Q4015L5 Q4010LS2

    TRANSISTORS BJT list

    Abstract: "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt
    Text: Understanding Basic Analog - Active Devices Application Report July 1999 Mixed Signal Products SLOA026 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF SLOA026 TRANSISTORS BJT list "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


    Original     		PDF ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK

    RF2316

    Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
    Text: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data


    Original     		PDF TA0015 RF2312/RF2317: RF2316 TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures

    30 micro farad capacitor 6000 volt

    Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
    Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability


    Original     		PDF ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660

    RF2316

    Abstract: DIN4500B TA0015 HBT transistor s parameters measures
    Text: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems       Monolithic Amplifiers using GaAs HBT technology have been developed. HBT based amplifiers offer extremely flat frequency response with high dynamic


    Original     		PDF TA0015 RF2312/RF2317: 40dBm. RF2317 RF2316. RF2316 DIN4500B TA0015 HBT transistor s parameters measures

    disadvantages of microcontroller

    Abstract: power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet Transistor BJT High Current mosfet stereo headphone amplifier circuit headphone jack ADAU1761 BJT IC Vce bjt advantages and disadvantages
    Text: AN-1056 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Capless Headphone Virtual Ground Short-Circuit Protection for the ADAU1361 and ADAU1761 Low Power Codecs


    Original     		PDF AN-1056 ADAU1361 ADAU1761 AN08757-0-2/10 disadvantages of microcontroller power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet Transistor BJT High Current mosfet stereo headphone amplifier circuit headphone jack BJT IC Vce bjt advantages and disadvantages

    SiC BJT

    Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters RF Transistor s-parameter NPN transistor mhz s-parameter bipolar transistor s-parameter RF Bipolar Transistor
    Text: Copyright c [Year] IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Advanced Power Technology's products or services. Internal or personal use of this material is permitted. However, permission to


    Original     		PDF

    IC 16pin log amplifier

    Abstract: sample log sheet of light monitoring advantages of a bjt amplifier "Logarithmic Amplifiers" log amp APP3611 MAX4000 MAX4001 MAX4002 MAX4003
    Text: Maxim > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Keywords: log amps, logarithmic amplifiers, DC log amp, log amplifiers, logarithmic amps Sep 23, 2005 APPLICATION NOTE 3611 Integrated DC Logarithmic Amplifiers


    Original     		PDF MAX4000: MAX4001: MAX4002: MAX4003: MAX4206: AN3611, APP3611, Appnote3611, IC 16pin log amplifier sample log sheet of light monitoring advantages of a bjt amplifier "Logarithmic Amplifiers" log amp APP3611 MAX4000 MAX4001 MAX4002 MAX4003

    power BJT

    Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
    Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT


    Original     		PDF iW1810 power BJT bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant

    high frequency bjt

    Abstract: bjt specifications Drive Base BJT power BJT Transistor BJT High Current FLYBACK APPLICATION NOTES bjt 500v optoisolator
    Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● 64 kHz PWM switching frequency


    Original     		PDF iW1810 high frequency bjt bjt specifications Drive Base BJT power BJT Transistor BJT High Current FLYBACK APPLICATION NOTES bjt 500v optoisolator

    InP HBT transistor low noise

    Abstract: 1 micro farad capacitor 100 micro farad capacitor ECG001 current amplifier note darlington InP HBT transistor
    Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications n n Broadband Gain Blocks n n n n DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz


    Original     		PDF ECG001 OT-89 ECG001 SS-000349-000 InP HBT transistor low noise 1 micro farad capacitor 100 micro farad capacitor current amplifier note darlington InP HBT transistor

    power bjt advantages and disadvantages

    Abstract: Linear Operation mosfet laser diode laser Driver Circuit" laser driver circuits BJT Driver Darlington Independent Power Module optical mosfet Power Current Semiconductor Laser International
    Text: Using the ispPAC30 in a DWDM Laser Power Control Loop October 2001 Application Note AN6028 Overview Semiconductor laser diodes have revolutionized the communications marketplace by providing a significant increase in transmission bandwidth. Laser diodes are used in both long haul and local area communication systems. For long-haul communications systems, a technique known as Dense Wave Division Multiplexing DWDM


    Original     		PDF ispPAC30 AN6028 1-800-LATTICE power bjt advantages and disadvantages Linear Operation mosfet laser diode laser Driver Circuit" laser driver circuits BJT Driver Darlington Independent Power Module optical mosfet Power Current Semiconductor Laser International

    bjt 107

    Abstract: bjt specifications PWM switch AC-DC Drive Base BJT power BJT SWITCHING bjt 500v small signal BJT transistor 20 A BJT small signal bjt specifications low voltage high current BJT
    Text: iW1812 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT


    Original     		PDF iW1812 bjt 107 bjt specifications PWM switch AC-DC Drive Base BJT power BJT SWITCHING bjt 500v small signal BJT transistor 20 A BJT small signal bjt specifications low voltage high current BJT

    Untitled

    Abstract: No abstract text available
    Text: RF3376 Proposed GENERAL PURPOSE AMPLIFIER Typical Applications • Basestation Applications • Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications


    Original     		PDF RF3376 6000MHz. RF3376 6000MHz RF337XPCBA-41XFully

    BJT amplifiers

    Abstract: No abstract text available
    Text: RF3375 Proposed GENERAL PURPOSE AMPLIFIER Typical Applications • Basestation Applications • Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications


    Original     		PDF RF3375 6000MHz. RF3375 6000MHz RF337XPCBA-41XFully BJT amplifiers

    Untitled

    Abstract: No abstract text available
    Text: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and


    Original     		PDF iW1816 64kHz 230VAC

    Untitled

    Abstract: No abstract text available
    Text: RF3377 Proposed GENERAL PURPOSE AMPLIFIER Typical Applications • Basestation Applications • Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications


    Original     		PDF RF3377 6000MHz. RF3377 6000MHz RF337XPCBA-41XFully

    C2174

    Abstract: No abstract text available
    Text: C217X Design Guide C217X Design Guide DG-5941-1409 15-Sep-2014 Cambridge Semiconductor Ltd 2014 Page 1 Confidential DG-5941-1409 15-Sep-2014 C217X Design Guide Contents 1.1 Purpose .4


    Original     		PDF C217X DG-5941-1409 15-Sep-2014 C2174

    RF2681

    Abstract: No abstract text available
    Text: RF2681 I MICRO-DEVICES W-CDMA LINEAR VARIABLE GAIN DRIVER AMPLIFIER T y p ic a l A p p lic a tio n s General Purpose Driver Amplifier P ro d u c t D e s c rip tio n GENERAL PURPOSE AMPLIFIERS • PA Driver Amplifier for W-CDMA Handsets O i| o io|c[Â 1 a The RF2681 is a linear variable gain amplifier specifically


    OCR Scan     		PDF RF2681 12-pin, -43dBc 10MHz

    Untitled

    Abstract: No abstract text available
    Text: RF3377 MICRO-DEVICES GENERAL PURPOSE AMPLIFIER • Basestation Applications Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks Final PA for Low-Power Applications • IF or RF Buffer Amplifiers High Reliability Applications GENERAL PURPOSE


    OCR Scan     		PDF RF3377 RF3377 6000MHz RF337XPCBA-41XFully

    Untitled

    Abstract: No abstract text available
    Text: RF3378 MICRO-DEVICES GENERAL PURPOSE AM PLIFIER • Basestation Applications Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks Final PA for Low-Power Applications • IF or RF Buffer Amplifiers High Reliability Applications GENERAL PURPOSE


    OCR Scan     		PDF RF3378 RF3378 6000MHz. RF337XPCBA-41XFully