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    BJT POWER AMPLIFIER Search Results

    BJT POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    BJT POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power BJT

    Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
    Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT


    Original     		PDF iW1810 power BJT bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant

    bjt 107

    Abstract: bjt specifications PWM switch AC-DC Drive Base BJT power BJT SWITCHING bjt 500v small signal BJT transistor 20 A BJT small signal bjt specifications low voltage high current BJT
    Text: iW1812 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT


    Original     		PDF iW1812 bjt 107 bjt specifications PWM switch AC-DC Drive Base BJT power BJT SWITCHING bjt 500v small signal BJT transistor 20 A BJT small signal bjt specifications low voltage high current BJT

    high frequency bjt

    Abstract: bjt specifications Drive Base BJT power BJT Transistor BJT High Current FLYBACK APPLICATION NOTES bjt 500v optoisolator
    Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● 64 kHz PWM switching frequency


    Original     		PDF iW1810 high frequency bjt bjt specifications Drive Base BJT power BJT Transistor BJT High Current FLYBACK APPLICATION NOTES bjt 500v optoisolator

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and


    Original     		PDF iW1816 64kHz 230VAC

    Untitled

    Abstract: No abstract text available
    Text: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied 9GaAs HBT Si BJT 1 4.00 ± 0.10


    Original     		PDF RF6100-1 CDMA20001/X 900MHZ RF6100-1 IS-95/CDMA 824MHz 849MHz 203mm 330mm

    LDMOS

    Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
    Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior


    Original     		PDF AN1223 LDMOS LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications

    monolithic amplifier MAR 3 app note

    Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
    Text: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz


    Original     		PDF -20dB, com/an644 AN644, APP644, Appnote644, monolithic amplifier MAR 3 app note HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ

    900MHZ

    Abstract: IPC-SM-782 RF6100-1
    Text: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS


    Original     		PDF RF6100-1 900MHZ CDMA20001/X RF6100-1 203mm 330mm 025mm IPC-SM-782

    TRANSISTOR cBC 449

    Abstract: No abstract text available
    Text: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller


    Original     		PDF UCC28722 UCC28722 50-mW TRANSISTOR cBC 449

    Untitled

    Abstract: No abstract text available
    Text: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller


    Original     		PDF UCC28722 UCC28722 50-mW

    Untitled

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features Matching Applied GaAs HBT Typical Gmax, OIP3, P1dB @ 5V,270mA GaAs MESFET 23 21 Si BiCMOS GaAs pHEMT Si CMOS 38 17 13 11 Si BJT 7 5 InP HBT


    Original     		PDF SGA9289Z OT-89 SGA9289Z DS140313 SGA9289ZSQ SGA9289ZSR

    amplitude modulation applications

    Abstract: LDMOS AN1223
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 amplitude modulation applications LDMOS AN1223

    mosfet high power rf ldmos

    Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 mosfet high power rf ldmos Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB

    power BJT

    Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
    Text: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of


    Original     		PDF -20dB, com/an644 power BJT HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B

    sot-23-6 pwm controller

    Abstract: rt9052 sot-23-6 led driver 1F 5.5V sot-23-6 led driver Marking Information
    Text: RT9052 Single Channel LED Current Source Controller General Description Features The RT9052 is a low cost, single channel LED current source controller with a specific FAULT detector. The part can drive an external NPN-BJT for various applications. The RT9052 is operated with Vcc power ranging from 3.8V


    Original     		PDF RT9052 RT9052 OT-23-6 DS9052-01 sot-23-6 pwm controller sot-23-6 led driver 1F 5.5V sot-23-6 led driver Marking Information

    an 214 amp schematic diagram

    Abstract: ROHM MCR03 ECB-101161
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz an 214 amp schematic diagram ROHM MCR03 ECB-101161

    power bjt advantages and disadvantages

    Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
    Text: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number


    Original     		PDF HBFP-0405 HBFP-0420 5968-2387E. 5988-6173EN power bjt advantages and disadvantages HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    power bjt advantages and disadvantages

    Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
    Text: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in


    Original     		PDF

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


    Original     		PDF ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK

    30 micro farad capacitor 6000 volt

    Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
    Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability


    Original     		PDF ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660

    RF2316

    Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
    Text: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data


    Original     		PDF TA0015 RF2312/RF2317: RF2316 TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures