BJT NPN MOTOROLA Search Results

BJT NPN MOTOROLA Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

BJT NPN MOTOROLA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IGBT SCHEMATIC Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541 Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,	Original	AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541	PDF
difference between IGBT and MOSFET IN inverter Abstract: IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink Text: AN1541/D Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. http://onsemi.com APPLICATION NOTE INTRODUCTION As power conversion relies more on switched applications, semiconductor manufacturers need to create	Original	AN1541/D r14525 difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink	PDF
POWER BJTs Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor	Original	AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time	PDF
ce 2826 ic Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer w ith Enable • Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast	OCR Scan	MDC5001T1 MDC5000 ce 2826 ic	PDF
ECG transistor replacement guide book free Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673 Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a	Original	UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673	PDF
ce 2826 ic Abstract: transistor mje 2050 transistor 1005 oj motorola 2676 10E18 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast	OCR Scan	MDC5001T1 MDC5000 ce 2826 ic transistor mje 2050 transistor 1005 oj motorola 2676 10E18	PDF
mosfet d408 Abstract: schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120 Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged	Original	IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; mosfet d408 schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120	PDF
IXAN0013 Abstract: 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged	Original	IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; IXAN0013 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter	PDF
SIT Static Induction Transistor Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are	Original	AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier	PDF
data sheet transistor 9018 NPN Abstract: 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 motorola rf spice Text: MOTOROLA Order this document by MDC5001T1/D SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast	Original	MDC5001T1/D MDC5001T1 data sheet transistor 9018 NPN 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 motorola rf spice	PDF
FET small signal transistors motorola Abstract: No abstract text available Text: MOTOROLA Order this document by MDC5000T1/D SEMICONDUCTOR TECHNICAL DATA MDC5000T1 SMALLBLOCK Low Voltage Bias S tabilizer • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast	OCR Scan	MDC5000T1/D MDC5000T1 2PHX34939F-0 FET small signal transistors motorola	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MDC5001T1/D SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer w ith Enable • Maintains Stable Bias Current in N -Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component W ithout Use of Emitter Ballast	OCR Scan	MDC5001T1/D MDC5001T1 419B-01	PDF
motorola bjt Abstract: mrf9411 ic3 pin diagram MDC5000T1 MRF941 MARKING E5 SOT-143 application notes BJT transistor test Text: MOTOROLA Order this document by MDC5000T1/D SEMICONDUCTOR TECHNICAL DATA MDC5000T1 SMALLBLOCK Low Voltage Bias Stabilizer • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors SILICON SMALLBLOCK INTEGRATED CIRCUIT	Original	MDC5000T1/D MDC5000T1 MDC5000T1/D* motorola bjt mrf9411 ic3 pin diagram MDC5000T1 MRF941 MARKING E5 SOT-143 application notes BJT transistor test	PDF
BJT npn motorola Abstract: transistor bd 370 power transistor bd JT9410 motorola bjt Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA M M Ü T9410 Preliminary Data Sheet B ipolar Pow er Transistors Motorola Preferred Device NPN Silicon • Collector -Emitter Sustaining Voltage — VcEO sus = 30 Vdc (Min) @ Iq = 10 mAdc	OCR Scan	MMJT9410/D T9410 OT-223 31SE-04, BJT npn motorola transistor bd 370 power transistor bd JT9410 motorola bjt	PDF

ECG transistor replacement guide book free Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete	Original		PDF
transistor bd 370 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT94I0/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon • Collector -Emitter Sustaining Voltage — V q e o s u s = 30 Vdc (Min) @ lc = 10 mAdc • High DC Current Gain — hpE = 85 (Min) @ lc = 0.8 Adc	OCR Scan	MMJT94I0/D OT-223 MMJT9410 318E-04, MMJT9410/D transistor bd 370	PDF
BD 140 transistor Abstract: BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410 Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	MMJT9410/D MMJT9410 BD 140 transistor BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors M M JT9410 NPN Silicon • Collector -E m itte r Sustaining Voltage — V cEO isus^ = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 85 (Min) @ Iq = 0.8 Adc	OCR Scan	MMJT9410/D JT9410 318E-04,	PDF
MMJT9410 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE	Original	MMJT9410/D MMJT9410 MMJT9410	PDF
74hc273 Abstract: MPSA2222 opa548 audio amplifier schematics uln2803 application note ULN2803 equivalent "application notes" ULN2803 application note uln2803 of ULN2803 of power drivers MPSA2222A 16 relays using uln2803 Text: CIRCUIT CELLAR IE M A G AZ IN E FÜR C O M PU TE R APPLICATIONS CONSIDERING THE DETAILS Bob Perrin I/O For Embedded Controllers Part 1: Digital I/O I/O, I/O, so off to work. Designing generic controllers with only guesstimations of what the endproduct I/O needs	OCR Scan	74HC244 74hc273 MPSA2222 opa548 audio amplifier schematics uln2803 application note ULN2803 equivalent "application notes" ULN2803 application note uln2803 of ULN2803 of power drivers MPSA2222A 16 relays using uln2803	PDF
zo102 Abstract: MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13 Text: Simulating Class C RF Amplifiers SPICE can be a versatile tool for RF work as long a few simple precautions are taken. Significant parasitics must be included in the circuit description, models of active devices must be represented using subcircuits, and selection of transient analysis options must be considered. The transient options include	Original	870MegHz zo102 MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13	PDF
Transformer and Inductor Design Handbook, Abstract: hall ic 01e 3C80 ferrite 3C80 transformer MC33262 3c80 material mbrs360 MC33072 flyback transformer high voltage copier 4n35 optocoupler Text: AND8024/D Off-Line Critical Conduction Switching Power Supply with Voltage and Current Limiting http://onsemi.com Prepared by: Larry Hayes, Jim Spangler ON Semiconductor Phoenix, AZ 85008 APPLICATION NOTE current through the primary of the coupled inductor	Original	AND8024/D r14525 Transformer and Inductor Design Handbook, hall ic 01e 3C80 ferrite 3C80 transformer MC33262 3c80 material mbrs360 MC33072 flyback transformer high voltage copier 4n35 optocoupler	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
MC14499P Abstract: MC14499 4-DIGIT counter with 7-SEGMENT DISPLAY motorola cmos HIC-8 MC14489 MC14499DW Digit LED drivers with decimal with counter cmos 4 bit counter alphanumeric segment decoder Text: M OTOROLA S E M IC O N D U C T O R TECHNICAL DATA M C 14499 7 -S e g m e n t LED D isplay D e c o d e r/ D river w ith S erial In te rfa c e CMOS 16 Ï Ï 1 i P SUFFIX PLASTiC DIP CASE 707 The M C14499 is a 7-segm ent alphanum eric LED d e c o d e r/d riv e r w ith a serial in terface	OCR Scan	MC14499 MC14489 registeMC14499s MC14499 MC14499P 4-DIGIT counter with 7-SEGMENT DISPLAY motorola cmos HIC-8 MC14489 MC14499DW Digit LED drivers with decimal with counter cmos 4 bit counter alphanumeric segment decoder	PDF

BJT NPN MOTOROLA Search Results

BJT NPN MOTOROLA Result Highlights (5)

BJT NPN MOTOROLA Datasheets Context Search

IGBT SCHEMATIC

difference between IGBT and MOSFET IN inverter

POWER BJTs

ce 2826 ic

ECG transistor replacement guide book free

ce 2826 ic

mosfet d408

IXAN0013

SIT Static Induction Transistor

data sheet transistor 9018 NPN

FET small signal transistors motorola

Untitled

motorola bjt

BJT npn motorola

ECG transistor replacement guide book free

transistor bd 370

BD 140 transistor

Untitled

MMJT9410

74hc273

zo102

Transformer and Inductor Design Handbook,

2SC3355 SPICE MODEL

MC14499P