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    BJT DATASHEET WITH I-V CHARACTERISTICS Search Results

    BJT DATASHEET WITH I-V CHARACTERISTICS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NRF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation

    BJT DATASHEET WITH I-V CHARACTERISTICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiC BJT

    Abstract: transistor 304
    Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.


    Original     		PDF 12M6501 SiC BJT transistor 304

    MD1800

    Abstract: MD1801
    Text: MD1800/01 Datasheet High performance primary side regulator PSR offline switch G power supply (SMPS) controller PRODUCT DESCRIPTION MD180X is high performance primary sensing regulator (PSR) and monolithic switch power controller which is designed for


    Original     		PDF MD1800/01Â MD180X TL431 10-Mar-2013 MIX-PD-155787 MD1800 MD1801

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


    Original     		PDF BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference

    AN2344

    Abstract: STW9NK80Z STP11NM60FP STP9NK80Z Avalanche Transistor Circuits for Generating high power bjt 150w
    Text: AN2344 Application Note Power MOSFET avalanche characteristics and ratings Introduction Back in the mid-80s, power MOSFET manufacturers started to claim a new outstanding feature: Avalanche Ruggedness. Suddenly, new families of devices evolved, all with this “new” feature. The implementation


    Original     		PDF AN2344 mid-80s, AN2344 STW9NK80Z STP11NM60FP STP9NK80Z Avalanche Transistor Circuits for Generating high power bjt 150w

    PWM Controller For BJT

    Abstract: power transistor bjt 1000 a transistor marking CS
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the


    Original     		PDF AP3720 20kHz AP3720 PWM Controller For BJT power transistor bjt 1000 a transistor marking CS

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the


    Original     		PDF AP3720 20kHz AP3720

    710 opto coupler

    Abstract: 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current AP3720 bjt high voltage
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the


    Original     		PDF AP3720 20kHz AP3720 710 opto coupler 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current bjt high voltage

    crt horizontal deflection circuit

    Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
    Text: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317


    Original     		PDF AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
    Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage


    Original     		PDF AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt

    POWER BIPOLAR JUNCTION TRANSISTOR

    Abstract: sot 143 MARK 8F PSR Application Note Advanced Analog Circuits flyback AP1686
    Text: Preliminary Datasheet Low-Power Off-line PSR LED Controller AP1686 General Description Features The AP1686 is a high performance AC/DC power supply controller for LED lighting application. The device uses Pulse Frequency Modulation PFM method to build discontinuous conduction mode


    Original     		PDF AP1686 POWER BIPOLAR JUNCTION TRANSISTOR sot 143 MARK 8F PSR Application Note Advanced Analog Circuits flyback

    C2174

    Abstract: No abstract text available
    Text: C217X Design Guide C217X Design Guide DG-5941-1409 15-Sep-2014 Cambridge Semiconductor Ltd 2014 Page 1 Confidential DG-5941-1409 15-Sep-2014 C217X Design Guide Contents 1.1 Purpose .4


    Original     		PDF C217X DG-5941-1409 15-Sep-2014 C2174

    C2172

    Abstract: No abstract text available
    Text: C2172 Design Guide C2172 Design Guide DG-5349-1409 15-Sep-2014 Cambridge Semiconductor Ltd 2012 Page 1 Confidential DG-5349-1409 15-Sep-2014 C2172 Design Guide Contents 1 INTRODUCTION .4


    Original     		PDF C2172 DG-5349-1409 15-Sep-2014 C2172

    power BJT 1000 volt vce

    Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF OT223 150mA FZT560 27-Jun-2011 power BJT 1000 volt vce Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT

    C2171

    Abstract: No abstract text available
    Text: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation  Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design


    Original     		PDF C2171/2 C2171/2PX2 OT23-6 DS-5175-1406 3-Jun-2014 C2171

    IXAN0063

    Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS
    Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.


    Original     		PDF IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS

    STGH20N50

    Abstract: power BJT anti saturation diode bjt gate drive circuit power BJT 1000 volt vce Drive Base BJT STGH20N50 datasheet transistor BJT Driver 1000v Transistor bjt Switching Behaviour of IGBT Transistors stgh20
    Text: APPLICATION NOTE INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera ABSTRACT 1.1 Turn-On Switching This paper looks at the influence of the drive circuit on the switching behaviour of electronic devices belonging to different families. In particular Bipolar Junction


    Original     		PDF

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: MARKING CODE SMD IC sot23-5 philips ceramic capacitors smd SA57255-20GW smd transistor marking 1p
    Text: INTEGRATED CIRCUITS SA57255-XX CMOS switching regulator PWM controlled Product data File under Integrated Circuits, Standard Analog Philips Semiconductors 2001 Aug 01 Philips Semiconductors Product data CMOS switching regulator (PWM controlled) SA57255-XX


    Original     		PDF SA57255-XX SA57255-XX SA57255XX SA566xx TRANSISTOR SMD MARKING CODE 1P MARKING CODE SMD IC sot23-5 philips ceramic capacitors smd SA57255-20GW smd transistor marking 1p

    APT-0403

    Abstract: APT50M70B2LL APT9302 jfet 400V depletion Severns N-Channel jfet 400V depletion dodge APT0103 N-Channel jfet 500V depletion APT0002
    Text: Application Note APT-0403 Rev B March 2, 2006 Power MOSFET Tutorial Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 Introduction drain-source voltage is supported by the reverse biased


    Original     		PDF APT-0403 APT0002, APT9302, APT0103, APT50M70B2LL APT9302 jfet 400V depletion Severns N-Channel jfet 400V depletion dodge APT0103 N-Channel jfet 500V depletion APT0002

    ir 4427 cross reference

    Abstract: DDFA free of IR sensors free download datasheet of IR sensors 6A10 Diodes Inc avalanche transistors DIODES 6A10 equivalent 6A4 zener 6a1 6A4-T
    Text: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability


    Original     		PDF J-STD-020C MILSTD-202, 23-May-2011 ir 4427 cross reference DDFA free of IR sensors free download datasheet of IR sensors 6A10 Diodes Inc avalanche transistors DIODES 6A10 equivalent 6A4 zener 6a1 6A4-T

    transistor C 4429 equivalent

    Abstract: DIODES 6A10 6A10 Diodes Inc inverter driver bjt half bridge equivalent 6A4 free download datasheet of IR sensors
    Text: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability


    Original     		PDF J-STD-020C MILSTD-202, 18-May-2011 transistor C 4429 equivalent DIODES 6A10 6A10 Diodes Inc inverter driver bjt half bridge equivalent 6A4 free download datasheet of IR sensors

    APT9302

    Abstract: APT50M70B2LL APT0103 APT-0403 FREDFET jfet 400V depletion Severns APT0002 dodge Mohan
    Text: Application Note APT-0403 Rev B March 2, 2006 Power MOSFET Tutorial Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 Introduction drain-source voltage is supported by the reverse biased


    Original     		PDF APT-0403 APT0002, APT9302, APT0103, APT9302 APT50M70B2LL APT0103 FREDFET jfet 400V depletion Severns APT0002 dodge Mohan

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


    Original     		PDF AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


    Original     		PDF ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK

    FMMT634TA

    Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF OT223 150mA FZT560 GL-106, FMMT634TA FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F