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    BJT BASE DRIVE CIRCUIT Search Results

    BJT BASE DRIVE CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    BJT BASE DRIVE CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    crt horizontal deflection circuit

    Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
    Text: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317


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    PDF AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver

    BJT Base Drive circuit

    Abstract: power bjt iw1697
    Text: iW1697 Low-Power Off-Line Digital Green-Mode PWM Controller 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● No-load power consumption < 20 mW at 230 Vac with typical application circuit 5 star rating


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    PDF iW1697 iW1697 BJT Base Drive circuit power bjt

    IW1700

    Abstract: logic SOT-23 Depletion Mode mosfet iW1700-01 iWatt digital power
    Text: iW1700 Zero Power No-Load Off-Line Digital PWM Controller 1.0 Features 2.0 Description ●● Zero power consumption at no-load with lowest system cost < 5 mW at 230 Vac with typical application circuit ●● Intelligent low power management achieves ultra-low


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    PDF iW1700 IW1700 logic SOT-23 Depletion Mode mosfet iW1700-01 iWatt digital power

    iW1677

    Abstract: logic SOT-23 Depletion Mode mosfet PWM Controller For BJT depletion mode mosfet audio iw16
    Text: iW1677 Low-Power Off-Line Digital Green-Mode PWM Controller 1.0 Features 2.0 Description ●● No-load power consumption < 20 mW at 230 Vac with typical application circuit 5 star rating ●● Fast dynamic load response for both one-time and repetitive load transients


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    PDF iW1677 iW1677 logic SOT-23 Depletion Mode mosfet PWM Controller For BJT depletion mode mosfet audio iw16

    bjt specifications

    Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
    Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT


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    PDF AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor

    STGH20N50

    Abstract: power BJT anti saturation diode TP 220 bjt Drive Base BJT 20A igbt IGBT DRIVER SCHEMATIC 3 PHASE small signal BJT transistor power BJT Switching Behaviour of IGBT Transistors transistor BJT Driver
    Text: APPLICATION NOTE  INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera ABSTRACT 1.1 Turn-On Switching This paper looks at the influence of the drive circuit on the switching behaviour of electronic devices belonging to different families. In particular Bipolar Junction


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    STGH20N50

    Abstract: power BJT anti saturation diode bjt gate drive circuit power BJT 1000 volt vce Drive Base BJT STGH20N50 datasheet transistor BJT Driver 1000v Transistor bjt Switching Behaviour of IGBT Transistors stgh20
    Text: APPLICATION NOTE INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera ABSTRACT 1.1 Turn-On Switching This paper looks at the influence of the drive circuit on the switching behaviour of electronic devices belonging to different families. In particular Bipolar Junction


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    iw1698

    Abstract: bjt switch
    Text: iW1698 Low-Power Off-line Digital Green-Mode PWM Controller 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● No-load power consumption < 30 mW at 230 Vac with typical application circuit 5 star rating


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    PDF iW1698 iW1698 bjt switch

    Untitled

    Abstract: No abstract text available
    Text: iW1698 Low-Power Off-line Digital Green-Mode PWM Controller 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● No-load power consumption < 30 mW at 230 Vac with typical application circuit 5 star rating


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    PDF iW1698

    iW1676

    Abstract: Primary-side Offline PWM Power Switch
    Text: iW1676 Low-Power Off-Line Digital Green-Mode PWM Controller 1.0 Features 2.0 Description ●● No-load power consumption < 30 mW at 230 Vac with typical application circuit 5-star rating ●● Fast dynamic load response for both one-time and repetitive load transients


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    PDF iW1676 iW1676 Primary-side Offline PWM Power Switch

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
    Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


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    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPSL100 Preliminary LINEAR INTEGRATED CIRCUIT HIGH PRECISION CC PRIMARY-SIDE LED CONTROLLER 3  5 4 SOT-25 FEATURES * Primary-side sensing and regulation without TL431 and opto-coupler * High precision constant current regulation at universal AC input


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    PDF UPSL100 OT-25 TL431 UPSL100 QW-R125-028

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPSL102 Preliminary LINEAR INTEGRATED CIRCUIT HIGH PRECISION CC PRIMARY-SIDE LED CONTROLLER 3  2 1 DESCRIPTION 5 The UTC UPSL102 is a high performance offline PSR controller for LED lighting, which can achieve accurate LED current and low


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    PDF UPSL102 UPSL102 TL431 QW-R125-028

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPSRB01 LINEAR INTEGRATED CIRCUIT HIGH PRECISION CC/CV PRIMARY SIDE SWITCHING REGULATOR  6 DESCRIPTION 5 The UTC UPSRB01 is a primary control unit for switch mode charger and adapter applications. The controlled variable is


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    PDF UPSRB01 UPSRB01 TL431 QW-R103-078

    C2171

    Abstract: No abstract text available
    Text: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation  Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design


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    PDF C2171/2 C2171/2PX2 OT23-6 DS-5175-1406 3-Jun-2014 C2171

    sot-23/sot-23/uc3842 AC-DC application

    Abstract: No abstract text available
    Text: iW1677 Product Brief Low-Power Off-Line Digital Green-Mode PWM Controller 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● No-load power consumption < 20 mW at 230 Vac with typical application circuit 5 star rating ● Fast dynamic load response for both one-time and


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    PDF iW1677 iW1677 sot-23/sot-23/uc3842 AC-DC application

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPSRB01B Preliminary LINEAR INTEGRATED CIRCUIT HIGH PRECISION CC/CV PRIMARY SIDE SWITCHING REGULATOR  6 DESCRIPTION 5 The UTC UPSRB01B is a primary control unit for switch mode charger and adapter applications. The controlled variable is


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    PDF UPSRB01B UPSRB01B TL431 QW-R103-096

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPSRB01A Preliminary LINEAR INTEGRATED CIRCUIT HIGH PRECISION CC/CV PRIMARY SIDE SWITCHING REGULATOR  6 DESCRIPTION 5 The UTC UPSRB01A is a primary control unit for switch mode charger and adapter applications. The controlled variable is


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    PDF UPSRB01A UPSRB01A TL431 QW-R103-095

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPSRB02 Preliminary LINEAR INTEGRATED CIRCUIT HIGH PRECISION CC/CV PRIMARY SIDE SWITCHING REGULATOR  6 DESCRIPTION 5 The UTC UPSRB02 is a primary control unit for switch mode charger and adapter applications. The controlled variable is


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    PDF UPSRB02 UPSRB02 TL431 QW-R103-079

    Untitled

    Abstract: No abstract text available
    Text: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost


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    PDF C2173 C2173 OT23-6 DS-5706-1403 03-Mar-2014

    C2174

    Abstract: No abstract text available
    Text: C217X Design Guide C217X Design Guide DG-5941-1409 15-Sep-2014 Cambridge Semiconductor Ltd 2014 Page 1 Confidential DG-5941-1409 15-Sep-2014 C217X Design Guide Contents 1.1 Purpose .4


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    PDF C217X DG-5941-1409 15-Sep-2014 C2174

    C2172

    Abstract: No abstract text available
    Text: C2172 Design Guide C2172 Design Guide DG-5349-1409 15-Sep-2014 Cambridge Semiconductor Ltd 2012 Page 1 Confidential DG-5349-1409 15-Sep-2014 C2172 Design Guide Contents 1 INTRODUCTION .4


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    PDF C2172 DG-5349-1409 15-Sep-2014 C2172

    mos Turn-off Thyristor

    Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
    Text: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


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