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    BJT 138 Search Results

    BJT 138 Result Highlights (1)

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    OPA2863DGKEVM Texas Instruments Evaluation module for OPA2863 very low-power BJT-input, wide-supply range, RRIO high-speed op amp Visit Texas Instruments

    BJT 138 Datasheets Context Search

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    crt horizontal deflection circuit

    Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
    Text: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317


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    PDF AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver

    power bjt advantages and disadvantages

    Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
    Text: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number


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    PDF HBFP-0405 HBFP-0420 5968-2387E. 5988-6173EN power bjt advantages and disadvantages HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405

    monolithic amplifier MAR 3 app note

    Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
    Text: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz


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    PDF -20dB, com/an644 AN644, APP644, Appnote644, monolithic amplifier MAR 3 app note HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ

    124e transistor

    Abstract: 2SB1443 Q2SB1443
    Text: SPICE PARAMETER 2SB1443 by ROHM TR Div. * Q2SB1443 PNP BJT model * Date: 2006/11/16 .MODEL Q2SB1443 PNP + IS=270.00E-15 + BF=215.55 + VAF=46.700 + IKF=6.7887 + ISE=270.00E-15 + NE=1.5952 + BR=9.3196 + VAR=100 + IKR=.37039 + ISC=7.9519E-12 + NC=1.3623 + NK=.95496


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    PDF 2SB1443 Q2SB1443 00E-15 9519E-12 000E-3 609E-3 0237E-9 03E-12 124e transistor 2SB1443

    124e transistor

    Abstract: 2SA1797 Q2SA1797 9519
    Text: SPICE PARAMETER 2SA1797 by ROHM TR Div. * Q2SA1797 PNP BJT model * Date: 2006/11/16 .MODEL Q2SA1797 PNP + IS=270.00E-15 + BF=215.55 + VAF=46.700 + IKF=6.7887 + ISE=270.00E-15 + NE=1.5952 + BR=9.3196 + VAR=100 + IKR=.37039 + ISC=7.9519E-12 + NC=1.3623 + NK=.95496


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    PDF 2SA1797 Q2SA1797 00E-15 9519E-12 000E-3 609E-3 0237E-9 03E-12 124e transistor 2SA1797 9519

    4606

    Abstract: 2SD1383K MJE447 Darlington npn darlington 1384 5000E-9
    Text: SPICE PARAMETER 2SD1383K * 2SD1383K DARLINGTON NPN BJT model * Date: 2006/12/13 *C B E .SUBCKT 2SD1383K 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 1.350 R1 4 3 4k .MODEL Q1model NPN + IS=30.00E-15 + BF=400 + VAF=50 + IKF=.1221 + ISE=30.00E-15


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    PDF 2SD1383K 2SD1383K 00E-15 737E-12 298E-3 650E-12 0E-12 346E-12 4606 MJE447 Darlington npn darlington 1384 5000E-9

    power BJT

    Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
    Text: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of


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    PDF -20dB, com/an644 power BJT HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B

    Untitled

    Abstract: No abstract text available
    Text: 2SA706-2 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)7.9 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SA706-2 Freq120M

    UTC TDA2822

    Abstract: BJT8050 TDA2822 s GF06 TDA28 JP13 JP16 PA15 0.1uf 0603 vr-10k
    Text: eSLZ000 EMFeSL XC Board for eSL Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.1 ELAN MICROELECTRONICS CORP. April 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.


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    PDF eSLZ000 16-Bit 0x0000 0x0001 0x8000 0X0004 UTC TDA2822 BJT8050 TDA2822 s GF06 TDA28 JP13 JP16 PA15 0.1uf 0603 vr-10k

    BJT with i-v characteristics

    Abstract: AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249
    Text: MT-096 TUTORIAL RFI Rectification Concepts INPUT-STAGE RFI RECTIFICATION SENSITIVITY A well-known but poorly understood phenomenon in analog integrated circuits is RFI rectification, specifically as it occurs in op amps and in-amps. While amplifying very small


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    PDF MT-096 BJT with i-v characteristics AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249

    rca 17520

    Abstract: TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 SMD TRANSISTOR ss 8050 transistor 8050 smd smd 8050 transistor 8050 smd transistor smd transistor 8050 pa15 transistor
    Text: ICEeSL-U XA In-Circuit Emulation Board for eSL/eAM Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.2 ELAN MICROELECTRONICS CORP. August 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.


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    PDF 16-Bit rca 17520 TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 SMD TRANSISTOR ss 8050 transistor 8050 smd smd 8050 transistor 8050 smd transistor smd transistor 8050 pa15 transistor

    NCP1450ASN50T1G

    Abstract: NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a
    Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A NCP1450ASN50T1G NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a

    NCP1450ASN50T1

    Abstract: 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1
    Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A NCP1450A NCP1450A/D NCP1450ASN50T1 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1

    NCP1450ASN50T1

    Abstract: DAZ sot23-5 design bjt oscillator
    Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A NCP1450A/D NCP1450ASN50T1 DAZ sot23-5 design bjt oscillator

    NCP1450ASN50T1

    Abstract: No abstract text available
    Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A r14525 NCP1450A/D NCP1450ASN50T1

    NCP1450ASN50T1

    Abstract: 5 pin IC marking DAZ TSOP30
    Text: Back NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A r14525 NCP1450A/D NCP1450ASN50T1 5 pin IC marking DAZ TSOP30

    design bjt oscillator

    Abstract: NCP1450ASN50T1 DAZ sot23-5 "BJT Transistors" power transistor bjt 1000 a sot23-5 dbd A114 A115 JESD22 NCP1450ASN19T1
    Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A NCP1450A r14525 NCP1450A/D design bjt oscillator NCP1450ASN50T1 DAZ sot23-5 "BJT Transistors" power transistor bjt 1000 a sot23-5 dbd A114 A115 JESD22 NCP1450ASN19T1

    Untitled

    Abstract: No abstract text available
    Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step−up DC−DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A NCP1450A NCP1450A/D

    5 pin IC marking DAZ

    Abstract: power BJT BJT IC Vce C5 MARKING TRANSISTOR D 2689 NCP1450ASN50T1G bjt ce amplifier application MOSFET CURRENT output impedance Inductor 10 H delta rectifier all model
    Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step−up DC−DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


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    PDF NCP1450A NCP1450A NCP1450A/D 5 pin IC marking DAZ power BJT BJT IC Vce C5 MARKING TRANSISTOR D 2689 NCP1450ASN50T1G bjt ce amplifier application MOSFET CURRENT output impedance Inductor 10 H delta rectifier all model

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


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    PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    HCPL-322J

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


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    PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 HCPL-322J

    6DI30A-120

    Abstract: transistor 3Ft transistor and schematic symbols M606 fuji bjt
    Text: 6DI30A-120 FUJI BTD8DE 6-Pack BJT 1200 V 30 A • Outline Drawings POWER TRANSISTOR MODULE I «.I « ^ Features • SW /± EU 0V EV BWEW fïi * EX High Voltage • 7»j — y Krt / f t A C Motor Controls . Air Conditionens t #*14 • Maximum Ratings and Characteristics


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    PDF 6DI30A-120 6DI30A-120 transistor 3Ft transistor and schematic symbols M606 fuji bjt

    KF 35 transistor

    Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
    Text: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications


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    PDF D11500-050 E82988 50A///S KF 35 transistor power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500

    bjt 50a

    Abstract: M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols
    Text: FUJI 6-Pack BJT 600 V 50 A 6DI50C-050 [M L S m S O e l £ POWER TRANSISTOR MODULE f '• Outline Drawings LÖÖ^JM 4 18-5 I 18"5""i" 18-5 |fiÖij 4-^5.a ! Features • K r tlt -y i — y f z j i) ' s f ? j • h F E ^ iS ^ ' In c lu d in g Free W h e e lin g D iode


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    PDF 50C-050 E82988 bjt 50a M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols