Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BJ ET Search Results

    SF Impression Pixel

    BJ ET Price and Stock

    Winbond Electronics Corp W949D2DBJX5E

    DRAM 512Mb LPDDR, x32, 200MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics W949D2DBJX5E 85
    • 1 $3.37
    • 10 $3.06
    • 100 $2.71
    • 1000 $2.64
    • 10000 $2.57
    		Buy Now

    Winbond Electronics Corp W989D2DBJX6E

    DRAM 512Mb LPSDR, x32, 166MHz, 46nm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics W989D2DBJX6E 25
    • 1 $3.73
    • 10 $3.38
    • 100 $3
    • 1000 $2.87
    • 10000 $2.72
    		Buy Now

    Winbond Electronics Corp W989D2DBJX6E TR

    DRAM 512Mb LPSDR, x32, 166MHz, 46nm T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics W989D2DBJX6E TR
    • 1 $3.78
    • 10 $3.43
    • 100 $2.99
    • 1000 $2.73
    • 10000 $2.59
    		Get Quote

    Vector Electronics & Technology Inc VMETBJ1

    Datalogging & Acquisition BOARD TERMINATOR J1, PAIR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VMETBJ1
    • 1 $149.32
    • 10 $149.32
    • 100 $149.32
    • 1000 $149.32
    • 10000 $149.32
    		Get Quote

    Vector Electronics & Technology Inc VMETBJ1-P

    Datalogging & Acquisition BOARD TERMINATOR J1, PAIR, PARALLEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VMETBJ1-P
    • 1 $170.62
    • 10 $154.63
    • 100 $140.44
    • 1000 $140.44
    • 10000 $140.44
    		Get Quote
    Find more BJ ET price and stock on Findchips.com

    BJ ET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    y5v 104z sec capacitor

    Abstract: Y5V 104Z sec LMK107BJ474K LMK316BJ335 lmk316f226z Y5V 104Z 200C2 M05 SMD LMK316F106Z LMK550F107ZM
    Text: HIGH CAPACITANCE MULTILAYER CERAMIC CAPACITORS Ni ELECTRODE BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F FEATURES YThe use of Nickel(Ni) as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C y5v 104z sec capacitor Y5V 104Z sec LMK107BJ474K LMK316BJ335 lmk316f226z Y5V 104Z 200C2 M05 SMD LMK316F106Z LMK550F107ZM

    K25VJ85C

    Abstract: K55VJ85C FMMG 2
    Text: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR BJ OPERATING TEMP. F BJ K25VJ85C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C 特長 FEATURES Y4 circuits in 3216 package allows higher placement density and efficiency YThe capacitance in each circuit, F or B dielectric, is 1AF


    Original     		PDF K25VJ85C K55VJ85C K30VJ85C Y32164 Y11AF 212f0805g 316f1206g 031M0 033M0 K25VJ85C K55VJ85C FMMG 2

    GMK316

    Abstract: FCX-01
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432type 107N212N316N325type GMK316 FCX-01

    GMK325

    Abstract: fcx0
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432type 325type GMK325 fcx0

    taiyo yuden umk

    Abstract: JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K55VJ125C K55VJ85C K25VJ85C K30VJ85C taiyo yuden umk JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F

    JMK212BJ105K

    Abstract: LMK107BJ334 LMK107BJ474 JMK212F475ZD
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C JMK212BJ105K LMK107BJ334 LMK107BJ474 JMK212F475ZD

    p40x

    Abstract: 316TYPE f0035
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432N550type 107N212N316N325type p40x 316TYPE f0035

    250v 104 J capacitor

    Abstract: No abstract text available
    Text: 中高耐圧積層セラミックコンデンサ MEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ K25VJ85C X5R K55VJ85C X7R K55VJ125C 特長 FEATURES Y内部電極にNi金属を使用しておりマイグレーションが発生せず、高信頼


    Original     		PDF K25VJ85C K55VJ85C K55VJ125C 316f1206g 325f1210g 432f1812g K25V85 K55V125 K55V85 M20fMg 250v 104 J capacitor

    4040l1

    Abstract: No abstract text available
    Text: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF


    Original     		PDF TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ TISP40xxL1AJ/BJ e/PI0229 4040l1

    h3 do-214ac

    Abstract: 4015L GR-1089-CORE TISP4015L1AJ TISP4015L1BJ TISP4030L1AJ TISP4030L1BJ TISP4040L1BJ do-214ac footprint 4040L1
    Text: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF


    Original     		PDF TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ TISP40xxL1AJ/BJ h3 do-214ac 4015L GR-1089-CORE TISP4015L1AJ TISP4015L1BJ TISP4030L1AJ TISP4030L1BJ TISP4040L1BJ do-214ac footprint 4040L1

    4015L1

    Abstract: 4040L1 4015L 4030L1 h3 do-214ac DO-214AC SMA TISP4015L1BJ TISP4030L1AJ subscriber carrier module 100 sma 4040L
    Text: *R oH S CO M PL IA NT TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF


    Original     		PDF TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ TISP40xxL1AJ/BJ 401030L 4040L TISP4015L1BJ 4015L1 4040L1 4015L 4030L1 h3 do-214ac DO-214AC SMA TISP4015L1BJ TISP4030L1AJ subscriber carrier module 100 sma 4040L

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8

    Untitled

    Abstract: No abstract text available
    Text: ~P U "f Hz "7 ^ '7 Zl > X > "tfARRAY TYPE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. , BJ BJ —25— t-85°C X5R —55— h85°C j •4 circuits in 3216 package allows higher placement density and efficiency ■The capacitance in each circuit, F or B dielectric, is 1//F


    OCR Scan     		PDF 316TYPE J4K316BJ105MF J4K316BJ105M L4K212BJ104M J2K212BJ105M

    cxk5863b

    Abstract: CXK5863BM
    Text: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are


    OCR Scan     		PDF CXK5863BP/BM/BJ CXK5863BP 8192-word 25ns/30ns/35ns 300mW CXK5863BM CXK5863BJ cxk5863b CXK5863BM

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W O RD x PRELIMINARY 1 BIT DYN AM IC RAM D E SC R IP T IO N The TC511001BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC511001BP/BJ/BZ/BFT TC511001BP/BJ/BZ/BFT-60

    BFT 50 TH

    Abstract: No abstract text available
    Text: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as


    OCR Scan     		PDF TC511002BP/BJ/BZ/BFT TC511002BP/BJ/BZ/BFT-60 BFT 50 TH

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		PDF TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: 2 6 2 ,1 4 4 W O R D x4 PRELIMINARY B IT D Y N A M IC R A M DESCRIPTION The TC514258BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words oy 4 bits. The TC514258BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514258BP/BJ/BZ/BFT TC514258BP/BJ/BZ/BFT-60 TC514258BP/B /BZ/BFT-60

    256KDRAM

    Abstract: st A122 a124 es
    Text: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


    OCR Scan     		PDF TC511002BP/BJ/BZ/BFT TC511002BP/BJ/BZ/BFT-60 256KDRAM st A122 a124 es

    a231 ax hen no

    Abstract: BFT te 04 A225
    Text: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.


    OCR Scan     		PDF TC514258BP/BJ/BZ/BFT-60 TC514258BP/BJ/BZ/BFT TC514258BP/rBJ/BZ/BFT 2G/20 a231 ax hen no BFT te 04 A225

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M D ESC R IPTIO N The TC514266BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514266BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514266BP/BJ/BZ/BFT

    K316F

    Abstract: 325BJ106MN J684C K107B SFA10 325BJ CI047
    Text: M iz -y ^ y 1] > ~ r > "tf HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ —25-~+85°C X7R —55-“ +125°C X5R -5 5 -~+85°C F —25-+85°C Y5V - 3 0 - -+ 8 5 C p •W lUlNtôM fcfêfflU Ä ^ W IS B i:* "J * £ L T i b Z Z t l Z & t , ttÂ,


    OCR Scan     		PDF LMK432F476Z JMK212BJ106M JMK316BJ226M JMK325BJ476M LMK432BJ226M JMK432BJ107M K316F 325BJ106MN J684C K107B SFA10 325BJ CI047

    capacitor ttc 474

    Abstract: ttc 474 M1-0410-5
    Text: 4 * R E E fi JS “b ~y 5. v 0 =i > ~r > UMEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ —25-+85°C X5R —55-+85°C X7R - 5 5 - -+125°C # # m m m * r t s m s i c N i á í * u X a * s a > • The use of Nickel Ni) as material for internal electrodes almost completely


    OCR Scan     		PDF