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    BJ 22 Search Results

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    BJ 22 Price and Stock

    TAIYO YUDEN LMK316BJ226MD-T

    CAP CER 22UF 10V X5R 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMK316BJ226MD-T Reel 144,000 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.13433
    		Buy Now
    LMK316BJ226MD-T Cut Tape 5,278 1
    • 1 $0.56
    • 10 $0.374
    • 100 $0.2456
    • 1000 $0.16312
    • 10000 $0.16312
    		Buy Now

    TAIYO YUDEN GMK325BJ225KN-T

    CAP CER 2.2UF 35V X5R 1210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GMK325BJ225KN-T Reel 110,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.10082
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    Bristol Electronics GMK325BJ225KN-T 1,135 10
    • 1 -
    • 10 $0.525
    • 100 $0.2625
    • 1000 $0.105
    • 10000 $0.105
    		Buy Now
    GMK325BJ225KN-T 908
    • 1 -
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    Component Electronics, Inc GMK325BJ225KN-T 490
    • 1 $0.58
    • 10 $0.58
    • 100 $0.43
    • 1000 $0.38
    • 10000 $0.38
    		Buy Now
    Master Electronics GMK325BJ225KN-T 21,469
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1185
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    MOSLEADER SMBJ22 M2-ML

    DO-214AA(SMB) Commercial Grade
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBJ22 M2-ML Reel 50,000 200
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    • 10 -
    • 100 -
    • 1000 $0.02475
    • 10000 $0.02027
    		Buy Now

    MOSLEADER SMBJ22 R2G-ML

    DO-214AA(SMB) Commercial Grade
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBJ22 R2G-ML Reel 50,000 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.02475
    • 10000 $0.02027
    		Buy Now

    MOSLEADER SMBJ22A-TP-ML

    DO-214AA(SMB) Commercial Grade
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBJ22A-TP-ML Reel 50,000 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.02475
    • 10000 $0.02027
    		Buy Now
    Find more BJ 22 price and stock on Findchips.com

    BJ 22 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BJ224 Cinch Connectivity Solutions Trompeter Connectors, Interconnects - Coaxial Connectors (RF) - Adapters - CONN ADAPT JACK-JACK BNC 50OHM Original PDF
    BJ224 Emerson Network Power Coaxial Connectors (RF) - Adapters, Connectors, Interconnects, BNC BULKHEAD JACK 50 OHM STRT Original PDF

    BJ 22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ESC-11

    Abstract: No abstract text available
    Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BT -11 I BJ/BJ8/BN/BN8/BNK-11 Fully Mated Band† M83723/95 / M83723/96 M83723/97 / M83723/98 BJ/BJ8/BN/BN8/BNK-12 BACC63CM Shell Size J Coupling Thread Class 2A EN2997( )6 BT( )/BJ( )-12 † When fully mated with receptacle this band will be


    Original     		PDF MIL-DTL-83723, BJ/BJ8/BN/BN8/BNK-11 M83723/95 M83723/96 M83723/97 M83723/98 BJ/BJ8/BN/BN8/BNK-12 BACC63CM EN2997( BSK-12 ESC-11

    y5v 104z sec capacitor

    Abstract: Y5V 104Z sec LMK107BJ474K LMK316BJ335 lmk316f226z Y5V 104Z 200C2 M05 SMD LMK316F106Z LMK550F107ZM
    Text: HIGH CAPACITANCE MULTILAYER CERAMIC CAPACITORS Ni ELECTRODE BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F FEATURES YThe use of Nickel(Ni) as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C y5v 104z sec capacitor Y5V 104Z sec LMK107BJ474K LMK316BJ335 lmk316f226z Y5V 104Z 200C2 M05 SMD LMK316F106Z LMK550F107ZM

    sanyo electrolytic capacitors CE

    Abstract: sanyo capacitor
    Text: Surface Mount Type Aluminum Electrolytic Capacitors CE-BJ Series Surface Mount Type, Super low profile, 3.25mm height This series is one size shorter than CE-BE 3.9mm in height. SANYO is first to release 3.25mm height. Solvent proof within 2 minutes . CE-BJ


    Original     		PDF 120Hz/20 Z-25Z20 120Hzratio Z-40Z20 1000hrs. 120Hz, sanyo electrolytic capacitors CE sanyo capacitor

    BJM-12

    Abstract: 0179 0176
    Text: BJ Jumper bar Use the BJ jumper bar to connect consecutive and nonconsecutive terminal blocks with the same spacing. Two types of jumper bars are available : an assembled unit and a nonassembled unit. Both jumper bars include a metal tube which makes contact with the terminal


    Original     		PDF BJM16 BJM-12 0179 0176

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Type Aluminum Electrolytic Capacitors CV-BJ Series Surface Mount Type Miniature, Super low profile 3.25mm height CV-BJ series is to change height from 3.9mm of CV-BE which is a conventional low profile surface mount type capacitor, to be a lower profile 3.25mm which is the first time in the capacitor industry.


    Original     		PDF 120Hz/20 Z-25Z 1000hrs. 120Hz,

    Untitled

    Abstract: No abstract text available
    Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle Square Flange Receptacle, Threaded Coupling BT -17 I BJ/BJ8/BN/BN8/BNK-17 BACC63CN B BSK-17 BT( )/BJ( )-17 J Coupling Thread Optional 360° Accessory Teeth ESC10( )0 ESC11( )0 .250 Max. 6.35 Max. HTK/HNK/HSK-17


    Original     		PDF MIL-DTL-83723, BJ/BJ8/BN/BN8/BNK-17 BACC63CN BSK-17 ESC10( ESC11( HTK/HNK/HSK-17 8750ceptacles EN2997( M83723/82

    K25VJ85C

    Abstract: K55VJ85C FMMG 2
    Text: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR BJ OPERATING TEMP. F BJ K25VJ85C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C 特長 FEATURES Y4 circuits in 3216 package allows higher placement density and efficiency YThe capacitance in each circuit, F or B dielectric, is 1AF


    Original     		PDF K25VJ85C K55VJ85C K30VJ85C Y32164 Y11AF 212f0805g 316f1206g 031M0 033M0 K25VJ85C K55VJ85C FMMG 2

    GMK316

    Abstract: FCX-01
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432type 107N212N316N325type GMK316 FCX-01

    GMK325

    Abstract: fcx0
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432type 325type GMK325 fcx0

    taiyo yuden umk

    Abstract: JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K55VJ125C K55VJ85C K25VJ85C K30VJ85C taiyo yuden umk JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F

    JMK212BJ105K

    Abstract: LMK107BJ334 LMK107BJ474 JMK212F475ZD
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C JMK212BJ105K LMK107BJ334 LMK107BJ474 JMK212F475ZD

    p40x

    Abstract: 316TYPE f0035
    Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This


    Original     		PDF K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432N550type 107N212N316N325type p40x 316TYPE f0035

    250v 104 J capacitor

    Abstract: No abstract text available
    Text: 中高耐圧積層セラミックコンデンサ MEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ K25VJ85C X5R K55VJ85C X7R K55VJ125C 特長 FEATURES Y内部電極にNi金属を使用しておりマイグレーションが発生せず、高信頼


    Original     		PDF K25VJ85C K55VJ85C K55VJ125C 316f1206g 325f1210g 432f1812g K25V85 K55V125 K55V85 M20fMg 250v 104 J capacitor

    4040l1

    Abstract: No abstract text available
    Text: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF


    Original     		PDF TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ TISP40xxL1AJ/BJ e/PI0229 4040l1

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W O RD x PRELIMINARY 1 BIT DYN AM IC RAM D E SC R IP T IO N The TC511001BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC511001BP/BJ/BZ/BFT TC511001BP/BJ/BZ/BFT-60

    BFT 50 TH

    Abstract: No abstract text available
    Text: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as


    OCR Scan     		PDF TC511002BP/BJ/BZ/BFT TC511002BP/BJ/BZ/BFT-60 BFT 50 TH

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		PDF TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1

    TC514256

    Abstract: tc514256bz tc514256bj bft 5f TC514256BFT A158 IC
    Text: 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M PRELIMINARY DESCRIPTION The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514256BP/BJ/BZ/BFT toleBJ/BZ/BFT-60 TC514256BP/BJ/BZ/BFT-60 TC514256BP/B /BZ/BFT-60 TC514256 tc514256bz tc514256bj bft 5f TC514256BFT A158 IC

    Untitled

    Abstract: No abstract text available
    Text: 2 6 2 ,1 4 4 W O R D x4 PRELIMINARY B IT D Y N A M IC R A M DESCRIPTION The TC514258BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words oy 4 bits. The TC514258BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514258BP/BJ/BZ/BFT TC514258BP/BJ/BZ/BFT-60 TC514258BP/B /BZ/BFT-60

    Untitled

    Abstract: No abstract text available
    Text: y 2 6 2 ,14 4 W ORD PRELIMINARY x 4 BIT D Y N A M IC RAM D ESC R IP TIO N The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514256BP/BJ/BZ/BFT I/011/04 TC514256BPL/BJL/BZL/BFTL-60 TC514256BPL/B L/BZL/BFTL-60

    Untitled

    Abstract: No abstract text available
    Text: 1 ,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC R A M DESCRIPTION 511000 The TC BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC511000BP/BJ/BZ/BFT TC5110OOBP/BJ /BZ/BFT-60

    Untitled

    Abstract: No abstract text available
    Text: PART NO. GUIDE-POST 20031-»»*E—#1F YES 20031—*E—#2F YES 20031-* *E-#3F NO 20031—*E~#4F NO RETAINER YES NO YES NO DATUM PIN MARK TUBE PACKAGE EMBOSS TAPING 2 POS. i* 0£ -l^h |fi}- -Bj&- -0- 1 1 1 Elh 29 X 4jL -BJ-4 -fljP- PH M 20033 -# # -ts71


    OCR Scan     		PDF -ts71 25ill UL94V-0) 30CH3S8

    256KDRAM

    Abstract: st A122 a124 es
    Text: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


    OCR Scan     		PDF TC511002BP/BJ/BZ/BFT TC511002BP/BJ/BZ/BFT-60 256KDRAM st A122 a124 es

    a231 ax hen no

    Abstract: BFT te 04 A225
    Text: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.


    OCR Scan     		PDF TC514258BP/BJ/BZ/BFT-60 TC514258BP/BJ/BZ/BFT TC514258BP/rBJ/BZ/BFT 2G/20 a231 ax hen no BFT te 04 A225