BIPOLAR TRANSISTOR HIGH FREQUENCY Search Results

BIPOLAR TRANSISTOR HIGH FREQUENCY Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

BIPOLAR TRANSISTOR HIGH FREQUENCY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: S11A1 Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	PDF	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	PDF	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology
transistor Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor Text: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series	Original	PDF	X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45, MP-45F MP-25 MP-80 transistor transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
8 pin ic 3844 for 5 volts Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	PDF	AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107
transistor zo 107 Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	PDF	AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
common emitter amplifier Abstract: zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz AT-42070 S21E AT42070 Text: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability	Original	PDF	AT-42070 AT-42070 5966-4845E 5989-2654EN common emitter amplifier zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz S21E AT42070
Untitled Abstract: No abstract text available Text: Agilent AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The	Original	PDF	AT-42086 5965-8914E 5989-2656EN
at42085g Abstract: at-42085g AT42085 AT4208 42085 Text: Agilent AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz Description Agilent’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency	Original	PDF	AT-42085 wit010 5965-8913E 5989-2655EN at42085g at-42085g AT42085 AT4208 42085
b 595 transistor Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335 Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor	Original	PDF	MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	PDF	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	PDF	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
8054 transistor Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	PDF	AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0077EN AV01-0438EN 8054 transistor TRANSISTOR 4847 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500
power Junction FET advantages and disadvantages Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor	Original	PDF	ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
AT41500 Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	PDF	AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586

"Bipolar Transistor" Abstract: TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 AT-42010 TRANSISTOR 200 GHZ UHF transistor GHz S21E Text: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron	Original	PDF	AT-42010 AT-42010 5965-8910E AV01-0022EN "Bipolar Transistor" TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 TRANSISTOR 200 GHZ UHF transistor GHz S21E
transistor bc 647 Abstract: 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUD44D2 is state–of–art High Speed High gain BIPolar transistor H2BIP .	Original	PDF	BUD44D2 BUD44D2 Fully32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor bc 647 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108
AT-30533-TR1 Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA	Original	PDF	AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, AT-30533-TR1 AT-310 AT-30511-BLK AT-30511-TR1 AT-30533-BLK
Untitled Abstract: No abstract text available Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY	Original	PDF	PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101
sot669 footprint Abstract: No abstract text available Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY	Original	PDF	PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint
Untitled Abstract: No abstract text available Text: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis	OCR Scan	PDF	AT-32063 OT-363 SC-70) AT-32063 OT-363
Transistor 2SA 2SB 2SC 2SD Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228 Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81	OCR Scan	PDF	2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
at30b Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533 Text: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz	OCR Scan	PDF	AT-30511 AT-30633 AT-30533 OT-23 OT-143 OT-23, at30b AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
C945C Abstract: No abstract text available Text: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high	OCR Scan	PDF	AT-32063 OT-363 SC-70) AT-32063 OT-363 C945C
Untitled Abstract: No abstract text available Text: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high	OCR Scan	PDF	AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4

BIPOLAR TRANSISTOR HIGH FREQUENCY Search Results

BIPOLAR TRANSISTOR HIGH FREQUENCY Result Highlights (5)

BIPOLAR TRANSISTOR HIGH FREQUENCY Datasheets Context Search

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

transistor

8 pin ic 3844 for 5 volts

transistor zo 107

common emitter amplifier

Untitled

at42085g

b 595 transistor

D42C5

GT30J124

8054 transistor

power Junction FET advantages and disadvantages

AT41500

"Bipolar Transistor"

transistor bc 647

AT-30533-TR1

Untitled

sot669 footprint

Untitled

Transistor 2SA 2SB 2SC 2SD

at30b

C945C

Untitled