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    BIPOLAR TRANSISTOR DIE LAYOUT Search Results

    BIPOLAR TRANSISTOR DIE LAYOUT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR TRANSISTOR DIE LAYOUT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 IC marking code

    Abstract: EMF21-7 EMF21
    Text: EMF21 COMPLEX TRANSISTOR ARRAY Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Epitaxial Planar Die Construction One PNP Bipolar Transistor and One NPN Pre-Biased Transistor Ultra-Small Surface Mount Package


    Original     		PDF EMF21 OT-563 J-STD-020C MIL-STD-202, DS31201 B12 IC marking code EMF21-7 EMF21

    EMF21-7

    Abstract: EMF21
    Text: EMF21 COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT • • • • • Epitaxial Planar Die Construction One PNP Bipolar Transistor and One NPN Pre-Biased Transistor Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		PDF EMF21 OT-563 J-STD-020C MIL-STD-202, DS31201 EMF21-7 EMF21

    Untitled

    Abstract: No abstract text available
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N


    Original     		PDF HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D MIL-STD-202, DS30701

    9V-12V DC INPUT

    Abstract: IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W NEW PROD PR OD UCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		PDF HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06

    9V-12V DC INPUT

    Abstract: sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01
    Text: HBDM60V600W Lead-free Green NEW PRODUCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		PDF HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01

    case 202 transistor pinouts

    Abstract: hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1


    Original     		PDF HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D DS30701 case 202 transistor pinouts hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D mbta06

    2sc115

    Abstract: BU108 2sc2270 2N6109 BD743D sec tip42c replacement for TIP147 TIP2955 DATA MJ1000 NSP2100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL44 * BUL44F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state–of–the–art die designed


    Original     		PDF BUL44/BUL44F BUL44F, Recognize32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sc115 BU108 2sc2270 2N6109 BD743D sec tip42c replacement for TIP147 TIP2955 DATA MJ1000 NSP2100

    2sc1826 transistor

    Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed


    Original     		PDF MJE18008 MJF18008 MJE/MJF18008 MJF18008, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2sc1826 transistor MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147

    MJE105

    Abstract: 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS The MJE/MJF18002 have an applications specific state–of–the–art die designed


    Original     		PDF MJE/MJF18002 MJF18002, E69369 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE105 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st

    2SD436

    Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed


    Original     		PDF MJE18006 MJF18006 MJE/MJF18006 MJF18006, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2SD436 mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100

    EQUIVALENT FOR mjf18004

    Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed


    Original     		PDF MJE/MJF18004 MJF1832 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C EQUIVALENT FOR mjf18004 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits

    k 3563

    Abstract: 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state–of–the–art die designed


    Original     		PDF BUL147/BUL147F BUL147F, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B k 3563 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors

    MJE42 transistor

    Abstract: 2N6043 GENERAL ELECTRIC 2SC1096 BU108 tip35c motorola replacement for TIP147 transistor MJE6043 BC 3337 TIP34C equivalent BD263
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL146* BUL146F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The BUL146/BUL146F have an applications specific state–of–the–art die designed


    Original     		PDF BUL146/BUL146F Isolate32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJE42 transistor 2N6043 GENERAL ELECTRIC 2SC1096 BU108 tip35c motorola replacement for TIP147 transistor MJE6043 BC 3337 TIP34C equivalent BD263

    TRANSISTOR 2SC2366 TO220

    Abstract: K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art die dedicated to


    Original     		PDF MJE/MJF18204 MJE18204 MJF18204 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TRANSISTOR 2SC2366 TO220 K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111

    60Ghz

    Abstract: AN1509 60GHz transistor
    Text: AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design,


    Original     		PDF AN1509 60Ghz AN1509 60GHz transistor

    RF TRANSISTOR 10GHZ

    Abstract: SiC BJT 60Ghz bipolar transistor ghz s-parameter silicon bipolar transistor rf power amplifier AN1509 s-parameters of an 60GHz transistor bipolar transistor die layout
    Text: AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design,


    Original     		PDF AN1509 RF TRANSISTOR 10GHZ SiC BJT 60Ghz bipolar transistor ghz s-parameter silicon bipolar transistor rf power amplifier AN1509 s-parameters of an 60GHz transistor bipolar transistor die layout

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    mosfet class d

    Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
    Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less


    Original     		PDF AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier

    A005

    Abstract: transistor k 4212 copper bond wire
    Text: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 2.0 Handling Chips with Tweezers 1.1 General Unfortunately, both silicon and GaAs materials are quite brittle GaAs is more so and the sharp edges of the


    Original     		PDF 5091-8802E 5968-3242E A005 transistor k 4212 copper bond wire

    transistor k 4212 fet

    Abstract: Silicon Bipolar Transistor Hewlett-Packard transistor k 4212
    Text: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips


    Original     		PDF 5091-8802E 5968-3242E transistor k 4212 fet Silicon Bipolar Transistor Hewlett-Packard transistor k 4212

    SS14 SOD123

    Abstract: SS14 DIODE schottky SS14 DIODE dc-dc DC SS14 diode Silicon Schottky Diode sod123 SMA-DIODE SOD523 footprint SS14 DIODE AN1039 high power bipolar transistor selection
    Text: AN10393 BISS transistors and MEGA Schottky rectifiers - improved technologies for discrete semiconductors Rev. 01.00 — 01 September 2005 Application note Document information Info Content Keywords BISS transistor, MEGA Schottky rectifier, DC/DC converter, Loadswitch,


    Original     		PDF AN10393 PBSS4240V, PBSS4350T, PBSS4320T, PMEG2010AEJ, PMEG1020EJ, PMEG6010AED, OD323F, OT666 SS14 SOD123 SS14 DIODE schottky SS14 DIODE dc-dc DC SS14 diode Silicon Schottky Diode sod123 SMA-DIODE SOD523 footprint SS14 DIODE AN1039 high power bipolar transistor selection

    gilbert cell differential pair

    Abstract: HFA3101 pnp 8 transistor array 5.1 transistor amplifier circuit diagram AN9744 974-4 Transistor Array differential amplifier NPN PNP Transistor Arrays HFA3046 HFA3096
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note June 2004 Linear Arrays Have Advantages Over Discrete Transistors R4 100Ω R1 2kΩ Q4 Q5 R2 15kΩ RF 240Ω R3 1kΩ C1 1nF RS 50Ω VS 5V - L1 1µH VO Q2 C2 1nF + C3 1nF RL 50Ω


    Original     		PDF HFA3101 gilbert cell differential pair HFA3101 pnp 8 transistor array 5.1 transistor amplifier circuit diagram AN9744 974-4 Transistor Array differential amplifier NPN PNP Transistor Arrays HFA3046 HFA3096

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide