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    BIPOLAR TRANSISTOR CROSSREFERENCE Search Results

    BIPOLAR TRANSISTOR CROSSREFERENCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR TRANSISTOR CROSSREFERENCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    diagram UPS 200w

    Abstract: E209204
    Text: FMG2G150US60E Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMG2G150US60E E209204 FMG2G150US60E diagram UPS 200w

    SGL40N150

    Abstract: No abstract text available
    Text: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A


    Original     		PDF SGL40N150 SGL40N150 O-264 SGL40N150TU O-264

    FGL40N150DTU

    Abstract: No abstract text available
    Text: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A


    Original     		PDF FGL40N150D FGL40N150D O-264 FGL40N150DTU O-264

    IGBT cross-reference

    Abstract: AN9011
    Text: IGBT SGL5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A


    Original     		PDF SGL5N150UF SGL5N150UF O-264 SGL5N150UFTU O-264 AN-9011: AN-9011 SGL5N150UF) IGBT cross-reference AN9011

    Untitled

    Abstract: No abstract text available
    Text: IGBT SGF40N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGF40N60UF SGF40N60UF SGF40N60UFTU

    sgf80n60uf

    Abstract: No abstract text available
    Text: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGF80N60UF SGF80N60UF SGF80N60UFTU

    transistor igbt

    Abstract: SGF23N60UF
    Text: IGBT SGF23N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGF23N60UF SGF23N60UF SGF23N60UFTU transistor igbt

    Untitled

    Abstract: No abstract text available
    Text: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A


    Original     		PDF SGL40N150D SGL40N150D O-264 SGL40N150DTU

    SGS5N150UF

    Abstract: 220F
    Text: IGBT SGS5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A


    Original     		PDF SGS5N150UF SGS5N150UF O-220F SGS5N150UFTU O-220F 220F

    SGF23N60UFD

    Abstract: No abstract text available
    Text: IGBT SGF23N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		PDF SGF23N60UFD SGF23N60UFD SGF23N60UFDTU

    SGF5N150UF

    Abstract: IGBT cross-reference
    Text: SGF5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A


    Original     		PDF SGF5N150UF SGF5N150UF SGF5N150UFTU IGBT cross-reference

    IGBT 60A 1700v

    Abstract: FGL60N170D FGL60N170DTU transistor fgl60n170d
    Text: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A


    Original     		PDF FGL60N170D FGL60N170D O-264 FGL60N170DTU O-264 IGBT 60A 1700v transistor fgl60n170d

    2N7367

    Abstract: 2N3768 2N7368 IRGMIC50U MIL-PRF19500 TRANSISTOR SUBSTITUTION 1993 marking 589A
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 July 1998 INCH-POUND MIL-PRF-19500/589A 15 April 1998 SUPERSEDING MIL-S-19500/589 24 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR


    Original     		PDF MIL-PRF-19500/589A MIL-S-19500/589 2N7367 2N7368, MIL-PRF-19500. 2N3768 2N7368 IRGMIC50U MIL-PRF19500 TRANSISTOR SUBSTITUTION 1993 marking 589A

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    Motorola transistor smd marking codes

    Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
    Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new


    Original     		PDF November2006 2006NXPB Motorola transistor smd marking codes MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
    Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become


    Original     		PDF

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


    Original     		PDF

    transistor databook

    Abstract: No abstract text available
    Text: GENERAL INFORMATION As a recognised world leader in the field of Power Transistors, SGS-THOMSON is strongly committed to producing state-of-the art Power Bipolar Transistors. These devices have been specifically developed to optimise price/performance ratio for the


    OCR Scan     		PDF T0-220 transistor databook