BIPOLAR POWER TRANSISTOR DATA ON SEMICONDUCTOR Search Results

BIPOLAR POWER TRANSISTOR DATA ON SEMICONDUCTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

BIPOLAR POWER TRANSISTOR DATA ON SEMICONDUCTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJ11016 equivalent Abstract: ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MJL16218 MOTOROLA POWER TRANSISTOR 2N6191 Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES	Original	PDF	MJL16218/D MJL16218* MJL16218 MJL16218 MJ11016 equivalent ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MOTOROLA POWER TRANSISTOR 2N6191
MC7812 Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218 Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES	Original	PDF	MJL16218/D MJL16218* MJL16218 MC7812 MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337
MR918 Abstract: MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930 Text: MOTOROLA Order this document by MJE16106/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE16106  Data Sheet NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • •	Original	PDF	MJE16106/D MJE16106 MJE16106/D* MR918 MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930
c series transistor equivalent table Abstract: transistor equivalent table 3819 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet M JE16204 SCANSW ITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors Motorota Preferred D «vic The MJE16204 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It Is	OCR Scan	PDF	MJE16204 MJE16204 MJE1S204 c series transistor equivalent table transistor equivalent table 3819 transistor
Motorola transistors MJE3055 Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •	OCR Scan	PDF	MJE2955 MJE3055 1Ol50Â MJD6036 MJD3039 Motorola transistors MJE3055 Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
TP12N10 Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection	OCR Scan	PDF	MJW16206 MJF16206 AN1040. TP12N10 je210 desaturation design 1200 volt npn MPF930 MTP8P10 MUR8100E ex 3863
ex 3863 Abstract: MJf16206 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use In horizontal deflection	OCR Scan	PDF	MJF16206 MJW16206 AN1040. ex 3863
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	PDF	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
equivalent transistor K 3531 Abstract: two transistor flyback k 3531 transistor J16110 transistor equivalent table MJW16110 MJ16110 transistor K 3531 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘Motorola Prfrr»d Dcvlc« SWITCHMODE Bridge Series . . . specifically designed for use In half bridge and full bridge off line converters.	OCR Scan	PDF	MJ16110* MJW16110* MUR105 MUR170 UR405 MUR470 AR131) equivalent transistor K 3531 two transistor flyback k 3531 transistor J16110 transistor equivalent table MJW16110 MJ16110 transistor K 3531
K 3699 transistor Abstract: two transistor flyback D 400 F 6 F BIPOLAR TRANSISTOR bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106 D esigner’s Data Sheet NPN Silicon Pow er Itan sistor Switchmode Bridge Series . . . specifically designed for use In half bridge and full bridge off line converters. • • • • • • • • POWER TRANSISTORS	OCR Scan	PDF	MJE16106 AN875) MUR105 MUR170 UR405 MUR470 AR131) K 3699 transistor two transistor flyback D 400 F 6 F BIPOLAR TRANSISTOR bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503
P6302 Abstract: transistor equivalent table TL 3849 AN952 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet M otoroii P rtfe rrtd D avtc NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for	OCR Scan	PDF	MJW16010A* AN951) MUR105 MUR1100 MUR405 MUR4100 AR131) P6302 transistor equivalent table TL 3849 AN952
ballast electronic hps Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS	OCR Scan	PDF	MJE/MJF18006 O-220 O-220 MJF18006, ballast electronic hps TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006
OL35 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS S AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m ltter Diode and B uilt-in E fficient A ntisaturation N etw ork	OCR Scan	PDF	MJE18004D2 MJE18004D2 OL35
C 3311 transistor Abstract: DIODE MOTOROLA 39A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2 Designer's Data Sheet POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power TVansistor with Integrated Col lector-E m itter Diode and Built-in Efficient Antisaturation N etw ork	OCR Scan	PDF	BUL44D2 BUL44D2 C 3311 transistor DIODE MOTOROLA 39A

motorola bipolar transistor Abstract: MOTOROLA TRANSISTOR BUD42D Text: MOTOROLA Order this document by BUD42D/0 SEMICONDUCTOR TECHNICAL DATA BUD42D Designer’s Data Sheet High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Hetwork and a Transient Voltage Suppression Capability POWER TRANSISTORS 4 AMPERES	OCR Scan	PDF	BUD42D/0 BUD42D BUD42D BUD42D: 69A-13 motorola bipolar transistor MOTOROLA TRANSISTOR
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SCANSWITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors "Motorola Preferred Device POWER TRANSISTOR 15 AMPERES 1500 VOLTS — VcES	OCR Scan	PDF	MJL16218/D MJL16218 MJL16218
312oc Abstract: mjf8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230 Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet SWITCHMODE™ MJE18004 M JF18004* NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Dovlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state-of-the-art die designed	OCR Scan	PDF	MJE/MJF18004 O-220 AN1040. 312oc mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230
toroid FT10 Abstract: BUL45F 221A-06 221D BUL45 MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU L45* BUL45F* Designer’s Data Sheet NPN Silicon Power Transistor 'M otorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and in Switchmode Power	OCR Scan	PDF	BUL45F, E69369 BUL45 BUL45F toroid FT10 221A-06 221D MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt
V2-300V Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Ita n s is to r w ith Integrated C ollector-Em itter Diode and Built-in Efficient Antisaturation Netw ork POWER TRANSISTORS 5 AMPERES 700 VOLTS	OCR Scan	PDF	BUL45D2 BUL45D2 V2-300V
P8302 Abstract: 16006A c 3833 transistor c series transistor equivalent table transistor equivalent table 066AA MJh-16006A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH 16006A Designer’s Data Sheet NPN Silicon Power Transistor Motorol« Prfrrd D«vtc« 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching In in d u c tiv e c irc u its w h e re fa ll tim e Is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r	OCR Scan	PDF	6006A AN951) MUR105 MUR1100 UR405 AR131) P8302 16006A c 3833 transistor c series transistor equivalent table transistor equivalent table 066AA MJh-16006A
transistor rc 3866 Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JP tM M IM M A IM M M F 1 M M l* aa M JI1M 04) • W f U M H w H M llD N I M P I M M U m M JM M M I SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors M JW 16212* The MJW16212 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It	OCR Scan	PDF	MJW16212 AN1040. transistor rc 3866 t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
10205 transistor Abstract: JF18004 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS	OCR Scan	PDF	MJE/MJF18004 O-220 MJF18004, AN1040. 10205 transistor JF18004
3268 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH50 Designer's Data Sheet POWER TRANSISTOR 4 AMPERES BOO VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH50 has an application specific s ta te -o f-a rt die designed for use In 50 Watts HALOGEN electronic transformers and switchmode applications.	OCR Scan	PDF	BUH50 BUH50 21A-06 O-220AB VCC-15Volt8 3268
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.	OCR Scan	PDF	MJ16110/D J16110* 340F-03 O-247AE

BIPOLAR POWER TRANSISTOR DATA ON SEMICONDUCTOR Search Results

BIPOLAR POWER TRANSISTOR DATA ON SEMICONDUCTOR Result Highlights (5)

BIPOLAR POWER TRANSISTOR DATA ON SEMICONDUCTOR Datasheets Context Search

MJ11016 equivalent

MC7812

MR918

c series transistor equivalent table

Motorola transistors MJE3055

TP12N10

ex 3863

e13009

equivalent transistor K 3531

K 3699 transistor

P6302

ballast electronic hps

OL35

C 3311 transistor

motorola bipolar transistor

Untitled

312oc

toroid FT10

V2-300V

P8302

transistor rc 3866

10205 transistor

3268

Untitled