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    BIPOLAR MEMORY Search Results

    BIPOLAR MEMORY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    microcontroller based inverter

    Abstract: microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener
    Text: TB061 Bipolar PICmicro Power Systems SELF DRIVEN CHARGE PUMP Author: Joseph Julicher Microchip Technology Inc. BIPOLAR PICMICRO POWER SYSTEMS Introduction On occasion, it is convenient to power a PICmicro microcontroller from a bipolar supply. This allows an


    Original     		PDF TB061 RS-232 D-85737 DS91061A-page microcontroller based inverter microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener

    prom 32x8

    Abstract: GDFP2-F16 82s123 philips GDIP1-T16 82s123 82S123/BEA TRANSISTORS 123A 82S23 S23B GDIP1T-16
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32x8 APPLICATIONS DESCRIPTION • Prototyping/volume production • Sequential controllers • Format conversion • Hardwired algorithms


    Original     		PDF 82S23/S23A/S23B 82S123/123A/123B 256-bit 82S23 82S123 500ns prom 32x8 GDFP2-F16 82s123 philips GDIP1-T16 82S123/BEA TRANSISTORS 123A S23B GDIP1T-16

    82s141

    Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max


    Original     		PDF 512x8) 82S141 82S141 500ns 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24

    MIC5205-3.0

    Abstract: TC1014 TC1015 TC1054 TC1055 TC1070 TC1071 TC1185 TC1186 TC1187
    Text: M AN766 Pin-Compatible CMOS Upgrades to Bipolar LDOs Author: SUPPLY CURRENT: CMOS VS. BIPOLAR Don Alfano, Danny Alred, Abid Hussain and Paul Paglia, Microchip Technology Inc. INTRODUCTION Bipolar low dropout regulators LDOs have become common place in a variety of portable applications,


    Original     		PDF AN766 D-85737 DS00766B-page MIC5205-3.0 TC1014 TC1015 TC1054 TC1055 TC1070 TC1071 TC1185 TC1186 TC1187

    prom 256x4 bit

    Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:


    Original     		PDF 82S126A 82S129A 256x4) 82S126A 82S129A 82S126A: 82S129A: 500ns prom 256x4 bit GDIP1-T16 82S129A/BEA GDFP2-F16 bipolar PROM 32 x 32 matrix

    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137

    N82S131

    Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 N82S131 N82S141 n82s123 MCM10149 MCM7681C N82HS137

    26 SIGNETICS

    Abstract: 32X2 32X8 82S21 74181 pin configuration
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 64-BIT BIPOLAR WRITE-WHILE-READ RAM 32 x 2 TIMING DIAGRAMS 2-10 (C on td ) Signetics 82S21 (O.C.) BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR WRITE-WHILE-READ RAM ( 3 2 x 2 ) 82S21 (O .C .) TYPICAL APPLICATION BASIC 8-B IT FULLY BUFFERED A C C U M ULATO R


    OCR Scan     		PDF 64-BIT 82S21 82S33 64-B1T 26 SIGNETICS 32X2 32X8 82S21 74181 pin configuration

    8x305

    Abstract: BIPOLAR MEMORY
    Text: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry


    OCR Scan     		PDF 8X350-40 8X350-40 8X305 8X305, 8X350 8X37X BIPOLAR MEMORY

    ram 256x8

    Abstract: N8X350 8X350 8X300 N8X350F 8X305 S8X350 SC10 8x300 Signetics Application Notes sc1012
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 2048-BIT BIPOLAR RAM 256 X 8 DESCRIPTION 8X350 (T.S.) TYPICAL I/O STRUCTURE PIN CONFIGURATION The 8X350 bipolar RAM is designed p rinci­ p ally as a w orking sto ra g e elem ent in an 8X300 based system . Internal circuitry is


    OCR Scan     		PDF 2048-BIT 256x8) 8X350 8X350 8X300 8X300, N8X350-F, S8X350-F. ram 256x8 N8X350 N8X350F 8X305 S8X350 SC10 8x300 Signetics Application Notes sc1012

    8X350

    Abstract: F0380 8x305
    Text: Signetics 8X350 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 8X350 bipolar R A M is designed prin­ cipally as a working storage element in an 8X305 based system. Internal circuitry is provided for direct use in 8X305 applica­


    OCR Scan     		PDF 8X350 8X350 8X305 8X305, 470tl, F0380

    8 bit ttl mux

    Abstract: 82HS321 82HS321A
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which


    OCR Scan     		PDF 32K-bit 82HS321A 82HS321 -250nA 500ns 711Gfl2b 711002b 8 bit ttl mux 82HS321A

    GDFP2-F24

    Abstract: 82HS321 82HS321A
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which


    OCR Scan     		PDF 32K-bit 82HS321A 82HS321 -250nA 500ns 711Dfl2fa 711002b GDFP2-F24 82HS321A

    SIGNETICS prom

    Abstract: No abstract text available
    Text: 82S147B Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The


    OCR Scan     		PDF 82S147B 82S147B 512x8) SIGNETICS prom

    Signal Path designer

    Abstract: No abstract text available
    Text: Testing High-Performance Advanced Micro Devices Bipolar Memory INTRODUCTION During the last several years, the state-of-the art of TTL compatible bipolar memory integrated circuits has advanced very rapidly. Device complexity has increased dramatically not


    OCR Scan     		PDF

    10P256

    Abstract: PROM32 10P256F
    Text: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics Generic IV Programming procedure. The


    OCR Scan     		PDF 10P256 10P256 256-Bit PROM32 10P256F

    82S131

    Abstract: GDFP2-F16 GDIP1-T16 82S130A 82S131A
    Text: Product specification Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM 512 x 4 82S131A DESCRIPTION FEATURES The 82S130A and 82S131A are field-programmable, which means that custom patterns are immediately available by following the


    OCR Scan     		PDF 82S130A 82S131A -150pA 82S130A: 82S131A: 270ft 82S131 GDFP2-F16 GDIP1-T16

    Signetics 82S191

    Abstract: 82S191 82S191A signetics generic procedure
    Text: Signetics 82S191, 82S191A Military Bipolar Memory Products Product Specification 16K-Bit TTL Bipolar PROM DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing


    OCR Scan     		PDF 82S191, 82S191A 82S19 100ns 82S191A: 16K-Bit 82S191 82S191A Signetics 82S191 signetics generic procedure

    82S141/8708+prom

    Abstract: No abstract text available
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store


    OCR Scan     		PDF 82S141 -150jiA 82S141 1002b 711002b 82S141/8708+prom

    CQCC2-N28

    Abstract: 82S181A 1024 x 4 prom GDIP1-T24
    Text: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I


    OCR Scan     		PDF 82S181A 82S181A 500ns 711Qfi2b CQCC2-N28 1024 x 4 prom GDIP1-T24

    CE0102

    Abstract: 82S181 CQCC2-N28
    Text: Product specification Philips Semiconductors Military Bipolar Memory Products 8K-bit TTL bipolar PROM 1024 x 8 82S181 DESCRIPTION FEATURES The 82S181 is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I


    OCR Scan     		PDF 82S181 82S181 500ns 0Gfl5074 711002b CE0102 CQCC2-N28

    GDIP1-T16

    Abstract: GDFP2-F16 82S23 S23B 82s123 philips 82S123/BEA 82S123 82s123b PROM32 82S23A/BFA
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32 x 8 APPLICATIONS DESCRIPTION • Prototyping/volume production The 82S23 and 82S123 are field-programmable, which means that


    OCR Scan     		PDF 256-bit 82S23/S23A/S23B 82S123/123A/123B 82S23: 82S123 82S23 500ns Auqust24. GDIP1-T16 GDFP2-F16 S23B 82s123 philips 82S123/BEA 82s123b PROM32 82S23A/BFA

    signetics PROM

    Abstract: 82HS321A 82HS321B Signetics MUX
    Text: 82HS321A/82HS321B Signetics 32K-Bit TTL Bipolar PROM 4096 X 8 Military Bipolar Memory Products DESCRIPTION The 82HS321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The


    OCR Scan     		PDF 82HS321A/82HS321B 32K-Bit 82HS321 signetics PROM 82HS321A 82HS321B Signetics MUX