Untitled
Abstract: No abstract text available
Text: NPN Bipolar Transistor Features: • • • • Collector Emitter Breakdown Voltage DC Current Gain Current Gain Bandwidth Product Low Noise Figure : : : : BVCEO = 60 V dc minimum at IC = 10 mA dc 1 µA dc to 10 mA dc fT = 100 MHz (Typical) at IC = 500 µA dc
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element14
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100 amp npn darlington power transistors
Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0
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NTE289A¸
NTE385¸
NTE184¸
NTE196¸
NTE181¸
NTE175¸
NTE311¸
NTE85¸
NTE287¸
NTE382
100 amp npn darlington power transistors
NTE290A
NTE123AP
IC 741 amp
10 amp npn darlington power transistors
NTE159
NTE2395
nte199
100 amp darlington power transistors
power transistor CURRENT SWITCH 0.5 1 AMP
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AL8400
Abstract: AL8400QSE-7 sot353 marking AE mosfet marking code AE
Text: Green AL8400 /AL8400Q LINEAR LED DRIVER-CONTROLLER with 200mV CURRENT SENSE VOLTAGE and AUTOMOTIVE GRADE Description Pin Assignments The AL8400 is a 5-terminal adjustable Linear LED driver-controller offering excellent temperature stability and output handling capability.
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AL8400
/AL8400Q
200mV
AL8400/
AL8400Q
DS35115
AL8400QSE-7
sot353 marking AE
mosfet marking code AE
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m-pulse tunnel diode
Abstract: Mp2407 MP4033 MP2923 M-PULSE
Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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NPN Transistor 50A 400V
Abstract: to220f transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 1 TO-220F DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007
O-220
O-220F
MJE13007
O-220F1
MJE13007L-TA3-T
MJE13007G-TA3-T
MJE13007L-TF3-T
MJE13007G-TF3-T
MJE13007L-TF1-T
NPN Transistor 50A 400V
to220f transistor
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MJE13007D
Abstract: NPN Transistor 50A 400V 24 pin ic utc rc
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is
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MJE13007D
MJE13007D
MJE13007DL-TA3-T
MJE13007DG-TA3-T
O-220
MJE13007DL-TA3-T
O-220
QW-R203-042
NPN Transistor 50A 400V
24 pin ic utc rc
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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MJE13007
Abstract: mje13007 TRANSISTOR transistor MJE13007
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007
MJE13007
MJE13007L-TA3-T
MJE13007G-TA3-T
MJE13007L-TF3-T
MJE13007G-TF3-T
O-220
O-220F
MJE13007L-TA3-T
O-220,
mje13007 TRANSISTOR
transistor MJE13007
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MJE13007-M
Abstract: NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is
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MJE13007-M
MJE13007-M
MJE13007L-M-TA3-T
MJE13007G-M-TA3-T
O-220
MJE13007L-M-TA3-T
O-220
QW-R204-028
NPN Transistor 50A 400V
24 pin ic utc rc
400v 50A Transistor
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zener diode phc 24
Abstract: 350v ZENER DIODE -20/zener diode phc 24
Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for
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XDM10
XDM10
zener diode phc 24
350v ZENER DIODE
-20/zener diode phc 24
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Untitled
Abstract: No abstract text available
Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012 2795 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Siddarth G. Sundaresan, Aye-Mya Soe, Stoyan Jeliazkov, and Ranbir Singh, Member, IEEE Abstract—The stability of the electrical characteristics of SiC
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934-h
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Untitled
Abstract: No abstract text available
Text: HIGH POWER SWITCH Silicon Carbide Thyristors usher in the Smart Grid Revolution These devices offer near-theoretical, on-state blocking voltage and switching performance Global demand for high-efficiency, green energy technologies and products has placed new challenges on the electrical grid, on efficient exploitation of renewable energy
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1000X
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Application Note Document Number:AN4623 Rev. 0, 11/2012 MPC5643L Hardware Requirements by: Anita Maliverney, Masato Oshima, and Eugenio Fortanely Contents 1 Introduction 1
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AN4623
MPC5643L
e200z4
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ignition driver
Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
ignition driver
fairchild Resonant IC
FJAFS1510ATU
FDC655
HV cascode smps
cascode smps
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UPC317
Abstract: MP-45G PC317 PC337 upc741 upc337 G12702EJAV0UM00 Usage of Three-Terminal Regulators NEC thermal resistor nec
Text: User’s Manual Usage of Three-Terminal Regulators Document No. G12702EJAV0UM00 10th edition Date Published June 2005 NS CP(K) 2000 Printed in Japan The application circuits and the circuit constants in this document are only examples, and not intended for
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G12702EJAV0UM00
UPC317
MP-45G
PC317
PC337
upc741
upc337
G12702EJAV0UM00
Usage of Three-Terminal Regulators NEC
thermal resistor nec
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T6C transistor
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126
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2SD669/A
OT-223
OT-89
2SB649/A
O-251
O-252
O-92NL
O-126
O-126C
2SD669xL-x-AA3-R
T6C transistor
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uPC317
Abstract: Kawasaki voltage regulator 6 wire pc317 three terminal capacitor MP-45G PC337 G12702EJAV0UM00 nec zener diode
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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G12702EJAV0UM00
uPC317
Kawasaki voltage regulator 6 wire
pc317
three terminal capacitor
MP-45G
PC337
G12702EJAV0UM00
nec zener diode
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UC3380 CMOS IC PWM ST EP U P DC-DC CON T ROLLER ̈ DESCRI PT I ON The UC3380 is PWM step up DC-DC switching controller that operates from 0.9V. The low start up input voltage makes UC3380 specially designed for powering portable equipment from one or two
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UC3380
UC3380
QW-R502-099
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UD DIODE
Abstract: BJT Transistors equivalent io transistor 131-6 UTC 1316 amplifier
Text: UNISONIC TECHNOLOGIES CO., LTD UC3380 CMOS IC PWM STEP UP DC-DC CONTROLLER DESCRIPTION The UC3380 is PWM step up DC-DC switching controller that operates from 0.9V. The low start up input voltage makes UC3380 specially designed for powering portable equipment from one or two
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UC3380
UC3380
QW-R502-099
UD DIODE
BJT Transistors
equivalent io transistor 131-6
UTC 1316 amplifier
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j1510a
Abstract: FJAFS1510A
Text: FJAFS1510A ESBC Rated NPN Power Transistor Applications Description • High-Voltage and High-Speed Power Switches • Emitter-Switched Bipolar/MOSFET Cascodes ESBC™ • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The FJAFS1510A is a low-cost, high-performance power
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FJAFS1510A
j1510a
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J1720
Abstract: smps ic GKJ FDS8817
Text: FJAFS1720 ESBC Rated NPN Power Transistor ESBC Features FDS8817 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON) 0.304 V 10 A 0.0304 Ω (1) The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when
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FJAFS1720
FDS8817
J1720
smps ic GKJ
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low-drop-out regulator saturation triode
Abstract: REG103
Text: designfeature By Dave Heisley and Bert Wank, Burr-Brown Corp LDO REGULATORS WITH PNP PASS ELEMENTS NEARLY OBSOLETED THE EARLY NPN LINEAR REGULATORS. CMOS TECHNOLOGY BROUGHT FURTHER GAINS VIA PMOS LDO REGULATORS. NOW, N-CHANNEL LDO DEVICES, WHICH USE BCDMOS TECHNOLOGY,
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q2n* npn transistor
Abstract: No abstract text available
Text: INV5V0W NEW PRODUCT Lead-free Green COMPLEX ARRAY FOR BIPOLAR TRANSISTOR INVERTER General Description • 1NV5V0W features dual discrete NPN transistors that can support continuous maximum current up to 500 mA. It is suited for application where high loads need to be turned
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OT-363
DS30700
q2n* npn transistor
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q2n* npn transistor
Abstract: TRANSISTOR bc846b BC846B IPC-SM-782 MMBT2907A MMBTA06
Text: INV5V0W COMPLEX ARRAY FOR BIPOLAR TRANSISTOR INVERTER General Description NEW PRODUCT . • INV5V0W features dual discrete NPN transistors that can support continuous maximum current up to 500 mA. It is suited for application where high loads need to be turned on
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OT-363
DS30700
q2n* npn transistor
TRANSISTOR bc846b
BC846B
IPC-SM-782
MMBT2907A
MMBTA06
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