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    BIDIRECTIONAL SWITCH IGBT MATRIX CONVERTER Search Results

    BIDIRECTIONAL SWITCH IGBT MATRIX CONVERTER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation

    BIDIRECTIONAL SWITCH IGBT MATRIX CONVERTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bi-directional switches IGBT

    Abstract: siemens igbt eupec matrix EconoMAC econoMac IGBT IGBT based voltage source converter "bi-directional switches" IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters bidirectional switch
    Text: EconoMAC the first all-in-one IGBT module for matrix converters Eupec: Hr. M. Hornkamp; Hr. M. Loddenkötter; Hr. M. Münzer; Siemens A&D: Hr. O. Simon ; Hr. M. Bruckmann Abstract: Searching for new alternatives to the state of the art technology of voltage


    Original     		PDF CH2721-9/89/0000-0360 bi-directional switches IGBT siemens igbt eupec matrix EconoMAC econoMac IGBT IGBT based voltage source converter "bi-directional switches" IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters bidirectional switch

    IXAN0049

    Abstract: igbt inverter schematic induction heating applications of blocking oscillator "bi-directional switches" IGBT induction heating oscillator circuit bi-directional switches IGBT IGBT based voltage source converter igbt for HIGH POWER induction heating Converter for Induction Heating schematic induction heating circuit
    Text: IXAN0049 A New IGBT with Reverse Blocking Capability A. Lindemann IXYS Semiconductor GmbH Edisonstra e 15, D { 68623 Lampertheim www.IXYS.net Keywords Discrete Power Devices, Device applications, Device characterization, Devices, Matrix converters, MOS devices, New devices, Power semiconductor devices, Resonant converters, Resonantmode power supplies, Semiconductor devices, Soft switching, ZCS converters


    Original     		PDF IXAN0049 IXAN0049 igbt inverter schematic induction heating applications of blocking oscillator "bi-directional switches" IGBT induction heating oscillator circuit bi-directional switches IGBT IGBT based voltage source converter igbt for HIGH POWER induction heating Converter for Induction Heating schematic induction heating circuit

    D-68623

    Abstract: IXYS DS 145
    Text: Advanced Technical Information Bidirectional Switch with IGBT and fast Diode Bridge FIO 50-12BD IC25 VCES VCE sat typ. = 50 A = 1200 V = 2.0 V in ISOPLUS i4-PACTM 1 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90


    Original     		PDF 50-12BD IC25tic D-68623 IXYS DS 145

    50-12BD

    Abstract: D-68623 TF010 400TD
    Text: FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM


    Original     		PDF 50-12BD 50-12BD D-68623 TF010 400TD

    50-12BD

    Abstract: D-68623
    Text: FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		PDF 50-12BD 50-12BD D-68623

    Untitled

    Abstract: No abstract text available
    Text: FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		PDF 50-12BD

    Quasi-resonant Converter for induction cooker

    Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
    Text: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC


    Original     		PDF 4kW/100V FIN1025/FIN1026 Power247TM, Quasi-resonant Converter for induction cooker 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS

    bi-directional switches IGBT

    Abstract: DIM400PBM17-A000
    Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module DS5524-2.3 June 2008 LN26123 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		PDF DIM400PBM17-A000 DS5524-2 LN26123) DIM400PBM17-A000 170arantee bi-directional switches IGBT

    bi-directional switches IGBT

    Abstract: 3,3 kw high frequency transistor module bidirectional switch igbt matrix converter basic ac motor reverse forward electrical diagram DIM400PBM17-A000 DS-5524
    Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue June 2002, version DS5524-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM400PBM17-A000 DS5524-2 bi-directional switches IGBT 3,3 kw high frequency transistor module bidirectional switch igbt matrix converter basic ac motor reverse forward electrical diagram DIM400PBM17-A000 DS-5524

    bi-directional switches IGBT

    Abstract: DIM400PBM17-A000 bidirectional switch igbt matrix converter
    Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue June 2002, version DS5524-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM400PBM17-A000 DS5524-2 bi-directional switches IGBT DIM400PBM17-A000 bidirectional switch igbt matrix converter

    M6831

    Abstract: IC 7424
    Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue August 2003, version DS5543-3.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5545-4.0 September 2003 KEY PARAMETERS


    Original     		PDF DIM200MBS12-A000 DS5543-3 FDS5545-4 DIM200MBS12-A000 M6831 IC 7424

    Untitled

    Abstract: No abstract text available
    Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue July 2003, version DS5543-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5545-3.1 August 2003 KEY PARAMETERS VDRM


    Original     		PDF DIM200MBS12-A000 DS5543-3 FDS5545-3 DIM200MBS12-A000

    was dual transistor

    Abstract: DIM200MBS12-A000
    Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM


    Original     		PDF DIM200MBS12-A000 DS5543-1 DS5545-2 DIM200MBS12-A000 was dual transistor

    DIM200MBS12-A000

    Abstract: DS55452
    Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002


    Original     		PDF DIM200MBS12-A000 DS5543-1 DS5545-2 DIM200MBS12-A000 DS55452

    basic single phase ac motor reverse forward circuit diagram

    Abstract: bidirectional switch igbt matrix converter
    Text: DIM200WBS12-A000 Single Switch IGBT Module DS5862-1.1 FEB. 2006 FEATURES • 10 µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VT typ IC (max) IC(PK) (max) (LN24465)


    Original     		PDF DIM200WBS12-A000 DS5862-1 LN24465) DIM200WBS12-A000 basic single phase ac motor reverse forward circuit diagram bidirectional switch igbt matrix converter

    DIM200WBS12-A000

    Abstract: No abstract text available
    Text: DIM200WBS12-A000 Single Switch IGBT Module DS5862-1.2 March 2006 FEATURES • 10 µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VT typ IC (max) IC(PK) (max) (LN24533)


    Original     		PDF DIM200WBS12-A000 DS5862-1 LN24533) DIM200WBS12-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM200WBS12-A000 Single Switch IGBT Module DS5862-1.0 July 2005 FEATURES • 10 µs Short Circuit Withstand • Non Punch Trough Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat (typ) IC (max) IC(PK) (max) (LN24100)


    Original     		PDF DIM200WBS12-A000 DS5862-1 LN24100) DIM200WBS12-A000

    DIM400PBM17-A000

    Abstract: No abstract text available
    Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5524-1.2 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM400PBM17-A000 DS5524-1 DIM400PBM17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM400PBM17-A000 IGBT Bi-Directional Switch Module Replaces DS5524-2.3 DS5524-3 November 2010 LN27710 FEATURES KEY PARAMETERS • VDRM VT* IC IC(PK) 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DIM400PBM17-A000 DS5524-2 DS5524-3 LN27710)

    DIM400PBM17-A000

    Abstract: DIM400PBM17-A
    Text: DIM400PBM17-A000 IGBT Bi-Directional Switch Module Replaces DS5524-2.3 DS5524-3 November 2010 LN27710 FEATURES KEY PARAMETERS • VDRM VT* IC IC(PK) 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DIM400PBM17-A000 DS5524-2 DS5524-3 LN27710) DIM400PBM17-A000 DIM400PBM17-A

    igbt testing procedure

    Abstract: skyper IGBT Driver Power Schematic IGBT DRIVER SCHEMATIC IGBT DRIVER SEMIKRON L6100100 Semikron semikron IGBT bidirectional switch igbt matrix converter
    Text: SKYPER 32 - Technical Explanations SKYPER™ 32 Technical Explanations Revision 04 Status: preliminary -This Technical Explanation is valid for the following parts:


    Original     		PDF L6100100 Rev04 igbt testing procedure skyper IGBT Driver Power Schematic IGBT DRIVER SCHEMATIC IGBT DRIVER SEMIKRON L6100100 Semikron semikron IGBT bidirectional switch igbt matrix converter

    bi-directional switches IGBT

    Abstract: DIM200MBS12-A000 7404* 15v
    Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5545-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon KEY PARAMETERS VDRM typ VT (max) IC (max) IC(PK) ±1200V 4.3V 200A 400A


    Original     		PDF DIM200MBS12-A000 DS5545-1 DIM200MBS12-A000 bi-directional switches IGBT 7404* 15v

    IGBT DRIVER SCHEMATIC

    Abstract: Technical Explanations power transistor IGBT DRIVER SEMIKRON SC 8550 Semikron SKYPER 32PRO "Technical Explanations" IGBT Driver Power Schematic RM2,54
    Text: SKYPER 32PRO - Technical Explanations SKYPER™ 32PRO Technical Explanations Revision 02 Status: preliminary -This Technical Explanation is valid for the following parts:


    Original     		PDF 32PRO 32PRO L6100200 Rev02 IGBT DRIVER SCHEMATIC Technical Explanations power transistor IGBT DRIVER SEMIKRON SC 8550 Semikron SKYPER 32PRO "Technical Explanations" IGBT Driver Power Schematic RM2,54

    CMOS TTL Logic Family Specifications

    Abstract: ttl 7407 ttl to cmos converter 74c SERIES cmos logic data bi-directional switches IGBT TTL LS 7407 7407 TTL ttl 74 181 SV125 CD4010
    Text: Logic SELECTION GUIDE Logic SELECTION GUIDE Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of logic products to meet your design needs. You will not only find the performance that you


    Original     		PDF