1N6292A
Abstract: No abstract text available
Text: 1N6292A 75 V - 1 MA - 1500 W Unidirectional And Bidirectional Transient Voltage Sup. Page 1 of 1 Enter Your Part # Home Part Number: 1N6292A Online Store 1N6292A Diodes 75 V - 1 MA - 1500 W Unidirectional And Bidirectional Transistors Transient Voltage Suppressor Diode
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1N6292A
1N6292A
DO-27
com/1n6292a
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DIACS
Abstract: DB3 DB4 diac db3 specifications DIAC 5 VOLT
Text: HITANO ENTERPRISE CORP. DB3 THRU DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
DIACS
DB3 DB4
diac db3 specifications
DIAC 5 VOLT
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diac 32 V 5mA
Abstract: Bidirectional Diode Thyristors diac db3 specifications D60 DIAC diode d60 400C diode db3 DIAC 5 VOLT
Text: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
diac 32 V 5mA
Bidirectional Diode Thyristors
diac db3 specifications
D60 DIAC
diode d60
400C
diode db3
DIAC 5 VOLT
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D60 DIAC
Abstract: thyristor firing circuit diac 32 V 5mA DIODE D28 Low Voltage DIACs 400C bidirectional diode thyristor diac diode db3 diac db3 specifications
Text: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
D60 DIAC
thyristor firing circuit
diac 32 V 5mA
DIODE D28
Low Voltage DIACs
400C
bidirectional diode thyristor diac
diode db3
diac db3 specifications
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBS4991/D SEMICONDUCTOR TECHNICAL DATA MBS4991 MBS4992 MBS4993 Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive
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MBS4991/D
MBS4991
MBS4992
MBS4993
O-226AA
MBS4991/D*
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DIODE B31
Abstract: IDB31 reverse breakback voltage SOT-23 IP marking B31
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT IDB31 PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE SOT-23 FEATURES ¨ Intend for use in triac and thyristors circuits ¨ VBO: 30V to 34V ¨ Excellent Breakover Voltage Symmetry: typ. 1% ¨ Low Breakover Current: 20µA typ.
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IDB31
OT-23
DIODE B31
IDB31
reverse breakback voltage
SOT-23 IP
marking B31
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MBS4991 equivalent
Abstract: MBS4991 MBS4992 MBS4992 equivalent 5Bp power control Gate Turn-off Thyristor MBS4993 1/MBS4991 equivalent Thyristor Device Data motorola triac phase control
Text: MOTOROLA Order this document by MBS4991/D SEMICONDUCTOR TECHNICAL DATA MBS4991 MBS4992 MBS4993 Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive
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MBS4991/D
MBS4991
MBS4992
MBS4993
O-226AA
MBS4991/D*
MBS4991 equivalent
MBS4991
MBS4992
MBS4992 equivalent
5Bp power control
Gate Turn-off Thyristor
MBS4993
1/MBS4991 equivalent
Thyristor Device Data motorola
triac phase control
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Untitled
Abstract: No abstract text available
Text: NTE6411 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)35 V(BO) Max. (V)45 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6411
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: STD100 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V) V(BO) Max. (V)100 I(S) Max. (A) I(TRM) Max. (A)2.0m§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)1.0 @ t(w) (s) V(R) Max. (V) I(H) Max. (A) Holding Current V(TM) Max. (V)95 @I(T) (A) (Test Condition)
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STD100
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Untitled
Abstract: No abstract text available
Text: CT120E Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)110 V(BO) Max. (V)125 I(S) Max. (A)25u I(TRM) Max. (A)600m @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V) I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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CT120E
StyleDO-204AL
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 3E30-2 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V) V(BO) Max. (V)28 I(S) Max. (A) I(TRM) Max. (A)2.0m§ @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V) I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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3E30-2
StyleDO-204AB
NumberTY00200005
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Untitled
Abstract: No abstract text available
Text: NTE6407-92 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6407-92
StyleTO-92
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Untitled
Abstract: No abstract text available
Text: T10B160BB Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V) V(BO) Max. (V)193 I(S) Max. (A)800m I(TRM) Max. (A)1u @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 @ t(w) (s)20m V(R) Max. (V)144 I(H) Max. (A) Holding Current120mó V(TM) Max. (V)2
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T10B160BB
Current120mÃ
NumberTY00200005
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Untitled
Abstract: No abstract text available
Text: NTE6407-7 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6407-7
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Untitled
Abstract: No abstract text available
Text: T10B160BE Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V) V(BO) Max. (V)193 I(S) Max. (A)800m I(TRM) Max. (A)1u @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 @ t(w) (s)20m V(R) Max. (V)144 I(H) Max. (A) Holding Current180mó V(TM) Max. (V)2
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T10B160BE
Current180mÃ
NumberTY00200005
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Untitled
Abstract: No abstract text available
Text: D0201YR Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)26 V(BO) Max. (V)32 I(S) Max. (A)50u I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)3.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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D0201YR
StyleDO-204AH
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: NTE6408-7 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6408-7
StyleDO-204AA
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Untitled
Abstract: No abstract text available
Text: NTE6408 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6408
StyleDO-204AM
NumberTY00200003
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MBS4991 equivalent
Abstract: SBS thyristor motorola thyristor MBS4991 mbs4993 thyristor device data BS4992
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBS4991 MBS4992 MBS4993 Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive
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OCR Scan
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PDF
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O-226AA
MBS4991
MBS4992
MBS4993
CTO-226AA)
b3L72S5
MBS4991 equivalent
SBS thyristor
motorola thyristor
mbs4993
thyristor device data
BS4992
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SBS thyristor
Abstract: BS4991 mbs4993 MBS4992 equivalent thyristor circuits MBS4992 MBS-4992 mbs4992 MOTOROLA triac phase control circuits MBS4991 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBS4991 MBS4992 MBS4993 Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering In Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an Inexpensive
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OCR Scan
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PDF
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-226AA
MBS4991
MBS4992
MBS4993
S4992
BS4993
SBS thyristor
BS4991
mbs4993
MBS4992 equivalent
thyristor circuits
MBS-4992
mbs4992 MOTOROLA
triac phase control circuits
MBS4991 equivalent
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marking B31
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT IDB31 PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE SOT-23 FEATURES ♦ Intend for use in triac and thyristors circuits ♦ V bo: 30V to 34V ♦ Excellent Breakover Voltage Symmetry: typ. 1% ♦ Low Breakover Current: 20jl/A typ.
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OCR Scan
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PDF
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IDB31
OT-23
OT-23
IDB31
10kQD500kQD
20QDVo
marking B31
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HALL ELEMENT
Abstract: SHS110 magnetoresistive ptn1 shs210 SHS211 insb Hall Sensor insb SHS361
Text: SANYO SEMICONDUCTOR CORP Q1E D | T'nTOTb DDDSSlb M | 7 ^ «55-01 T P - a y - 01 BFDIRECTIONAL THYRISTORS T-on-on TRIGGER DEVICES r • • Item • ' Type Number Bidirectional Diode PUT : Characteristics,-.^-/-. ' _ Package BTD4M Vbo =29~37V DHD PTN1 Vo=6V, Ip=5pA
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T-25--
DTA05B
DTA05C
DTA05E
DTA08E
T0202
T0220
T0220,
HALL ELEMENT
SHS110
magnetoresistive
ptn1
shs210
SHS211
insb
Hall Sensor insb
SHS361
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DIODE B31
Abstract: marking b31 vb01 marking marking code b31 VB01 SOT23
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT IDB31 PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE SOT-23 FEATURES .122 3.1 .118(3.0) .016(0.4) Top View UTT .037(0.95) .037(0.95) ♦ Intend for use in triac and thyristors circuits ♦ V bo: 30V to 34V ♦ Excellent Breakover Voltage
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OCR Scan
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IDB31
OT-23
OT-23
i10kQD500kQD
20QDVo
DIODE B31
marking b31
vb01 marking
marking code b31
VB01 SOT23
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Untitled
Abstract: No abstract text available
Text: DB3 THRU FORWARD INTERNATIONAL ELECTRONICS LID. SEMICONDUCTOR TECHNICAL DATA DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * G lass passivalted th re e -la ye r fo r trig g e rin g th yrislo rs. * Low breakover current at b re ako ve r vohage.
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DO-35
MIL-STD-202E,
120ppS,
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