Untitled
Abstract: No abstract text available
Text: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.
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bh53131
005CH15
CNX35
CNX36
CNX39
CNX35U,
CNX36U
CNX39U.
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Untitled
Abstract: No abstract text available
Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
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bh53131
00E3T77
BST120
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BLW90
Abstract: 8-32UNC J188
Text: N AMER PHILIPS/DISCRETE bTE ]> • bh53131 IAPX D O ET^C Jl BLW 90 U.H.F. P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and
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bh53131
BLW90
7Z83356
7Z8335B
7Z83353
BLW90
8-32UNC
J188
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Fast Gate Turn-Off Thyristors
Abstract: BTW58
Text: 1 AilER PHILIPS/DISCRETE^ ^ ~ O b E J > 53^31 0 0 1 1 % 1 1 BTW 58 SERIES T ' 2 S - l£ T FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, motor control, horizontal
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O-220AB
BTW58â
1000R
1300R
1500R
QDin72
BTW58
Fast Gate Turn-Off Thyristors
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Untitled
Abstract: No abstract text available
Text: N AMER PHI LI PS /D IS CR ETE bbS 3 T 3 i 002041s a • 5SE D PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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002041s
BUK445-600A
BUK445-600B
BUK445
-600A
-600B
T-39-09
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BD204
Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
Text: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or
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BD202
BD204
BDX78
BD201,
BD203,
BDX77
BD202
BD204
O-220.
BDX78
BD201
80204
BD203
IEC134
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