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    BH RN TRANSISTOR Search Results

    BH RN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    BH RN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bly91a

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 7110fl2b BLY91A T-33-07 OT-48/2 bly91a

    BFQ43

    Abstract: BFQ43S lyp 809 BLW31 TRANSISTOR A1t
    Text: b^E » N AMER PHILIPS/DISCRETE • ^53^31 0DHÔ714 ODD ‘' BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar e pitaxial transistors intended fo r use in class-A, B o r C operated m ob ile tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he transistors are resistance stabilized and guaranteed to w ith ­


    OCR Scan     		PDF BFQ43 BFQ43S BFQ43S BLW31 lyp 809 TRANSISTOR A1t

    ferroxcube wideband hf choke

    Abstract: BLV99 002im3
    Text: N AMER PHI LIP S/DISCRETE bTE D Jl • ^53*131 □ OE'ilfl'i 40Û BLV99 U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r p rim a rily intended fo r use as a driver-stage in base stations in the 90 0 M H z co m m u n ica tio n s band.


    OCR Scan     		PDF BLV99 OT172A1) OT172A1. 960MHz; ferroxcube wideband hf choke BLV99 002im3

    BCX71H

    Abstract: No abstract text available
    Text: BCX71H PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


    OCR Scan     		PDF BCX71H KS5086 -10nA -50mA -10mA, -50mA, BCX71H

    BLV45/12

    Abstract: sot119 blv45-12
    Text: N AMER PHILIPS/DISCRETE b'ìE D • ^53^31 □DScîGH2 STb I IAPX BLV45/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in m ob ile rad io tra n sm itte rs in th e 175 MHz co m m u n ica tio n s band.


    OCR Scan     		PDF BLV45/12 OT-119) BLV45/12 sot119 blv45-12

    MCA443

    Abstract: 70cN
    Text: N AMER bTE D PHILIPS/DISCRETE • bbS 3ci31 D02ôûbE 744 I BLU60/28 UHF POWER TRANSISTOR NPN silico n planar e p ita xia l tran sisto r p rim a rily intended fo r use in radio tran sm itte rs in th e 470 MHz co m m u n ica tio n s band. Features • M ulti-base stru ctu re and e m itte r ballasting resistors fo r an o p tim u m tem perature p ro file


    OCR Scan     		PDF bbS3R31 BLU60/28 BLU60/28 OT119) MCA443 70cN

    equivalent 2N2907A

    Abstract: equivalent for 2N2907A PNp Transistor 2N2907A die equivalent transistor 2N2907a 2N2907A 2N5796 HCT740 2N2907A surface mount
    Text: OPTEK Product Bulletin HCT740 May 1993 Surface Mount Dual PNP Transistor Type HCT740 Features • Surface mountable on ceramic or printed circuit board • Miniature package to minimize circuit board area required • Electrical performance similar to 2N2907A


    OCR Scan     		PDF HCT740 HCT740 2N2907A MIL-S-19500 100MHz 100kHz equivalent 2N2907A equivalent for 2N2907A PNp Transistor 2N2907A die equivalent transistor 2N2907a 2N2907A 2N5796 2N2907A surface mount

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30S O-220AB

    BFS22A

    Abstract: J22 transistor 27Z60 BFS22
    Text: J b^E J> N AUER PHILIPS/DISCRETE bbS3^31 DDSÔ7BE Ifi? I IAPX BFS22A V.H.F. POWER TRANSISTOR N-P-N e p itaxia l planar tra n sisto r intended fo r use in class-A, B and C operated m obile, industrial and m ilita ry tra n s m itte rs w ith a supply voltage o f 13,5 V . The tra n sisto r is resistance stabilized. Every tra n ­


    OCR Scan     		PDF BFS22A BFS22A J22 transistor 27Z60 BFS22

    irg4bc30ud

    Abstract: BH rn transistor
    Text: International Iö R Rectifier PD 9.1453A IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4BC30UD irg4bc30ud BH rn transistor

    21-030-J

    Abstract: No abstract text available
    Text: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN.


    OCR Scan     		PDF MSC80196 MSC80196 S96184 015-H---NO. 21-030-J 21-030-J

    TT 2222

    Abstract: transistor tt 2222 ic TT 2222 BLW60C BTB 600 BR BD137 z670 Philips film capacitors 27 pf trimmer 3-30 pf Philips film capacitors polystyrene
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSaTBl G D S ^ S M TSG I IAPX B L W 60C I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itax ial transistor intended fo r use in class-A, B and C operated m o b ile , industrial and m ilita ry tran sm itters w ith a nom inal supply voltage o f 1 2 ,5 V , T h e transistor is resistance stabilized


    OCR Scan     		PDF bb53131 BLW60C 7z77255 TT 2222 transistor tt 2222 ic TT 2222 BLW60C BTB 600 BR BD137 z670 Philips film capacitors 27 pf trimmer 3-30 pf Philips film capacitors polystyrene

    TRANSISTOR A3

    Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
    Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


    OCR Scan     		PDF bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10

    BLV37

    Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
    Text: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain


    OCR Scan     		PDF BLV37 OT179 BLV37 ferroxcube wideband hf choke 4312 020 36642 B34 transistor

    IH02

    Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
    Text: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,


    OCR Scan     		PDF 2SD1691 2SB1151 QK0276 Ffflsi0266 IH02 ts 4141 TRANSISTOR 2SB1151 2SD1691 T460

    Untitled

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R TECHNICAL DATA 2N3019SJAN, JTX, JTXV, J A N S 2N3057AJAN, JTX, JTXV, J A N S 2N3700JAN, JTX, JTXV, J A N S CRVSTAIOMCS 2805 Veteran Highway Su»te 14 Ronkonkom* N Y. 1177ii Processed per MIL-S-19500 391 NPN Silicon Sm all-Signal Transistors


    OCR Scan     		PDF 2N3019SJAN, 2N3057AJAN, 2N3700JAN, MIL-S-19500 1177ii 3019S 2N30S7A 2N3700

    afe 1000

    Abstract: BSP 17 D AFE1000
    Text: SIEMENS PNP Silicon Darlington Transistors BSP 60 . BSP 62 • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP 50 . BSP 52 NPN Type Marking Ordering Code (tape and reel) Piti Con) igurat ion 1 2 3 4 Package1*


    OCR Scan     		PDF Q62702-P1166 Q62702-P1167 Q62702-P1168 OT-223 afe 1000 BSP 17 D AFE1000

    BH rn transistor

    Abstract: ROHM 2SD1733 2sb1241
    Text: Transistors Power Transistor -80V, -1A 2SB1260/2SB1181/2SB1241 current. •E x te rn a l dimensions (Units: mm) 2SB1260 2SB1181 co V oeo = - 8 0 V , to = - 1 A C0.5 / lO 2) Good hFE linearity. 3) 21 6 . 5 ± 0 .2 +0.2 2 3 ~ 0.1 0 .5 + 0 .1 c + 0 .2 5 - 0 .1


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 2SB1260 2SB1181 2SD1898/ 2SD1863/2SD1733. SC-62 SC-63 2SB1260) 2SB1241) BH rn transistor ROHM 2SD1733 2sb1241

    Untitled

    Abstract: No abstract text available
    Text: 4 0E ROHM CO LTD hÿ T Û S Ô 'm D OÛDSSTO 4 HRHM 2SB1212 £ /Transistors " 7=27-/ ? X £ 0$ * y y J i s 7 ° l s - ± M P N P V ' j : \ > V y > v 7 , ^ 4,1 :ftÍH1ÍSÜ/Med¡um Power Amp. Epitaxial Planar PNP Silicon Transistor • ¿i-Jf2\t'}£I§]/'0imensions Unit : mm


    OCR Scan     		PDF 2SB1212 -160V -160V 2SD1812.

    OC139

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,


    OCR Scan     		PDF 2SD2079 2SB1381 OC139

    MRF325

    Abstract: BH rn transistor
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON


    OCR Scan     		PDF MRF325 MRF325 BH rn transistor

    RTO BH

    Abstract: No abstract text available
    Text: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,


    OCR Scan     		PDF IRG4BC20K-S RTO BH

    transistor marking bh ra

    Abstract: TRANSISTOR bH
    Text: BCX71H PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


    OCR Scan     		PDF BCX71H transistor marking bh ra TRANSISTOR bH

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4 - MAY 1998_ FEATURES * 6 A Peak pulse c u rre n t * E xce lle n t h FE c h a ra cte ristics up to 6 A pulsed * lo w s a tu ra tio n v o lta g e * lc C ont 2.5A


    OCR Scan     		PDF ZTX718 ZTX618