5-87631-6
Abstract: 87631-2 87631-4 87631-6 87631-8
Text: SS M REV PER 0 0 1 0 - 0 5 0 5 - 9 5 4-95 EB SS C N REV PER 0 0 1 0 - 0 6 5 2 - 9 6 6 - 2- 96 EB ss p R REV PER 0 3 1 0 - 0 4 8 6 - 9 7 0 2 JUN98 BH BS REV PER 0G 21- 00 69- 99 26 APR99 BH DGG 5 REV PER 0G 21- 01 48- 99 25MAY99 BH DLS T REV PER 0G 21- 01 51- 99
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55C0ND
OBSO-87631-8
5-87631-6
87631-2
87631-4
87631-6
87631-8
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Untitled
Abstract: No abstract text available
Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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HYM536100A
36-bH
36-bit
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
DQ0-DQ35)
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Frequency Generator 1MHz
Abstract: step recovery diode New England Microwave NE12003
Text: 6563403 NEW ENGLAND MICROWAVE. . bh ' 66C 00087 DE | b S b 3 4 Q 3 0DD0DÛ7 I T ^ o n -iS 1 NÉW ÉNGLM1D MICROWWe CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 STEP RECOVERY AND MULTIPLIER DIODES NE12000 The NE12000 step recovery and multiplier diodes are epitaxial silicon varactors which achieve high
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5b3403
0D00DÃ
NE12000
NE12000
syn8-11
Frequency Generator 1MHz
step recovery diode
New England Microwave
NE12003
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JPW200S52R51-BHZ
Abstract: FLTR100V10 CC109121456 JPW200S52R5-BH JPW200S52R51-BH
Text: Data Sheet March 26, 2008 JPW200S52R5-BH Power Module; dc-dc Converter 38 Vdc - 75 Vdc Input, 52.5 Vdc Output; 200W RoHS Compliant Features Compatible with RoHS EU Directive 2002/95/EC -Z Versions n Compatible in RoHS EU Directive 2002/95/EC with lead solder exemption (non -Z versions)
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JPW200S52R5-BH
2002/95/EC
2002/95/EC
DS03-090
JPW200S52R51-BHZ
FLTR100V10
CC109121456
JPW200S52R51-BH
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Untitled
Abstract: No abstract text available
Text: Data Sheet March 26, 2008 JPW200S52R5-BH Power Module; dc-dc Converter 38 Vdc - 75 Vdc Input, 52.5 Vdc Output; 200W RoHS Compliant Features Compatible with RoHS EU Directive 2002/95/EC -Z Versions n Compatible in RoHS EU Directive 2002/95/EC with lead solder exemption (non -Z versions)
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JPW200S52R5-BH
2002/95/EC
2002/95/EC
DS03-090
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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Untitled
Abstract: No abstract text available
Text: 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S , 6 19 R ES ER V ED . D C [ 2 . 29±0 .05 . 090± . 002] 0 . 76±0 .05 [ . 030± . 002] 0 . 89± 0.08 [ . 0 3 5 ± .003] PLAT5D
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Untitled
Abstract: No abstract text available
Text: T H IS DRAWING 15 UNPUBLISHED. C COPYRIGHT 19_ RELEASED FOR PUBLICATION BY AMP INCORPORATED. 19 ALL RIGHTS RESERVED. D C 3.81+0.05 [.150+.002] 0.76+0.05 [ .030+.002] 1.02+0.08 [ .040+.003] ( PLATED ) RECOMMENDED FOR . 0 6 3 „ 0 1 2 A AMP
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05T5/5
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irf 940
Abstract: IRF 870 marking B48 LT 5239 H irf 560 vishay sj 56 marking code EB 38 LT 5239 B48 MARKING CODE 1/irf 1420
Text: IMS-5WD-40 Vishay Dale Inductors, Miniature, Shielded, Axial Leaded FEATURES • Miniature shielded inductor • High inductance-to-size ratio • Inductance range is 0.10 H to 56 000 μH • Encapsulated non-flammable shielded unit • 0.164" [4.17 mm] diameter by 0.450" [11.43 mm] long
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IMS-5WD-40
2002/95/EC
18-Jul-08
irf 940
IRF 870
marking B48
LT 5239 H
irf 560
vishay sj 56
marking code EB 38
LT 5239
B48 MARKING CODE
1/irf 1420
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Untitled
Abstract: No abstract text available
Text: r I 8 T H IS DRAWING 15 UNPUBLISHED. C COPYRIGHT 19 6 7 RELEA5ED FOR PUBLICATION BY AMP INCORPORATED. ALL 5 ,19 RIGHTS RESERVED. D 3.81+0.05 [.150+.002] [ 1.02+0.08 [ .040+.003] ( PLATED ) RECOMMENDED FOR . 0 6 3 „ 0 1 2 AMP 1756-3 REV ro / I 7~iQ 10-84
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8X9XBH
Abstract: AB-45 8x9x EPROM 64 KB 8XC196KB 8xc196kb memory external Embedded Microcontrollers and Processors Handbook
Text: AB-45 APPLICATION BRIEF Converting from the 8X9XBH or 8X9XJF to the 8XC196KB October 1991 Order Number 272093-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AB-45
8XC196KB
8X9XBH
AB-45
8x9x
EPROM 64 KB
8XC196KB
8xc196kb memory external
Embedded Microcontrollers and Processors Handbook
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040-0071
Abstract: CA-22 BH Electronics
Text: BH Electronics Network Test Baluns Part Number: 040-0055 040-0071 Convert 50½ 50½ unbalanced to 100 ½ balanced signals from 100 Khz to 350 Mhz. Designed for use in testing network cables, connectors and wiring systems at frequencies up to 350 MHz. MECHANICAL
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bh 26 00
Abstract: mc35
Text: 4 T HIS DRAWING 0 IS COPYRIGHT 3 UNPUBLISHED. RELEASED 19 BY AMP INCORPORATED. FOR P U B L I C A T I O N ALL 2 ,19 LOC R IG H T S R E S E R V E D . AD DIST REVISIONS 39 A 6 . 22 [ . 245] B ± .08 [ .003] -1 . 2 4 [.049] X- m I I - + - +- DUPLEY dSl
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09MAY94
07-AUG-00
arnp33743
/home/anip33743/ednirnod
bh 26 00
mc35
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e111
Abstract: zr 4.7 DI 944 45p6
Text: v ~8}/~ v -5384 2u3u ~327|~7 .+51+7/~|00; 6+|0+* +0+~753 1|-2+7/~ 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zywx ,?<IJG?H EdgXZ WVaVcXZY S^i] Xd^a igVch^Zci hjeegZhh^dc 94@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in
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b3h6/63Go
e111
zr 4.7
DI 944
45p6
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OZ 9906
Abstract: 9906S
Text: ARIES ELECTRONICS INC 54E D □T23DS3 0001DDS S3T ST A X-STIX S E R I E S B V & BH FE M A L E BO X C O N N E C T O R S 1 A-bl-í75-Q7 RRIES P.O. Box 130, Frenchtow n, N J 08825 Phone 1-908-996-6841 FA X 1-908-996-3891 E L E C T R O N IC S , IN C . M I-C 5 P 7
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T23DS3
0001DDS
UL94VO
OZ 9906
9906S
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5C transistor
Abstract: C1.L ec61
Text: wvx ~8}/~ /2~. x ,351 ~ .+51+7/~|00; 6+|0+* 0|7~./2- 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zyxw ,?<IJG?H EdgXZ WVaVcXZY aViX]^c\ gZaVn S^i] Xd^a igVch^Zci hjeegZhh^dc 54@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in
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b3h6/63Go
5729b
5729bVm
5C transistor
C1.L
ec61
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DI 944
Abstract: 5C transistor z456
Text: v~8}/~ /2~. x ,351 ~ .+51+7/~|00; 6+|0+* 0|7~./2- 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zyww ,?<IJG?H EdgXZ WVaVcXZY aViX]^c\ gZaVn S^i] Xd^a igVch^Zci hjeegZhh^dc 54@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in
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b3h6/63Go
b3h6/63G
88bVm
DI 944
5C transistor
z456
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zyww
Abstract: BC252
Text: wvy ~8}/~ /2~. x ,351 ~ .+51+7/~|00; 6+|0+* +0+~753 1|-2+7/~ 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zyww ,?<IJG?H \ \ \ \ \ \ \ EdgXZ WVaVcXZY ineZ S^i] Xd^a igVch^Zci hjeegZhh^dc 9@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in
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b3h6/63Go
5429bVm
7629bVm
927bVm
zyww
BC252
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61J8 42
Abstract: DI 944
Text: v ~8}/~ v -5384 2u3u ~327|~7 .+51+7/~|00; 6+|0+* +0+~753 1|-2+7/~ 5+0|; .,zywx ,?<IJG?H EdgXZ WVaVcXZY 94@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in @aa bZiVa lZaYZY XdchigjXi^dc GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg
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b3h6/63Go
61J8 42
DI 944
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DI 944
Abstract: No abstract text available
Text: v ~8}/~ /2~. w ,351 ~ .+51+7/~|00; 6+|0+* 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zxvy ,?<IJG?H Z Z Z Z Z Z Z EdgXZ WVaVcXZY ineZ S^i] Xd^a igVch^Zci hjeegZhh^dc 69@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in @aa bZiVa lZaYZY XdchigjXi^dc
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88bVm
DI 944
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ Ml rights restrrei m 2 4 5 6 1,5 to 5,0 panel th i ckness A I 111 C7^ CN I 41, 5 PANEL CUT DI MEN SI ONS : 3 , 2 t0-2 R O ,8 max 02 01 1 1 Detail. Insp. 36291 36227 36224 Mod. 29/02/12 15-FEB-11 Do t . 09 45 545 1901 09 45 452 0000
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15-FEB-11
26/JAN/11
F-95972
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Untitled
Abstract: No abstract text available
Text: wvx ~8}/~ /2~. x ,351 ~ .+51+7/~|00; 6+|0+* +0+~753 1|-2+7/~ 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zyxx ,?<IJG?H EdgXZ WVaVcXZY S^i] Xd^a igVch^Zci hjeegZhh^dc 54@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in
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b3h6/63Go
b3h68
5729bVm
88bVm
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PF5102
Abstract: KC105 Tekelec TE 10 75 a2cb -20/Tekelec TE 10 75
Text: Cb ~ 0.10 pF A 22 e 24.5min 4-2±a2 _ 10 1.9*°-2 a0.38*003 Cb ~ 0.10 pF B H 15 0.05/0.10 Cb ~ 0.20 pF B H 28 Cb~ 0,20 pF B H 32 0 3.1 ± 0.1 05.84 102 CNI -H hCO t 04.0 2.04 *0-07 5 ± 0 .1 74 0 4.06 101 C b ~ 0.14 pF C ~ 0.25 pF 0 1 .5710.05 01.8 j- .— w
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Untitled
Abstract: No abstract text available
Text: n 7 AMP IN COR PO RA TE D. ALL PUBLICATION R IG H T S LOG , 19 DI ST REVISIONS R ES ER V ED . A D 3 9 P LTR NEW PER DP1321-553 A 0010-0161-95 0010-0492-95 0010-0459-95 0010-0666-95 P R E EC 0 4 3 0 - 0 3 6 0 - 9 7 RE V P E R 0 4 3 0 - 0 2 5 7 - 9 7 RE V P E R 0 G 2 1 - 0 1 0 7 - 9 8
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DP1321-553
25AUG98
19AUG99
04FEB00
04-FEB-00
amp33743
/home/amp33743/edmmod
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