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    BGD712 Price and Stock

    NXP Semiconductors BGD712.112

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BGD712.112 64
    • 1 $49.816
    • 10 $49.816
    • 100 $39.8528
    • 1000 $39.8528
    • 10000 $39.8528
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    Philips Semiconductors BGD712

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc BGD712 7
    • 1 $23.08
    • 10 $23.08
    • 100 $17.31
    • 1000 $15
    • 10000 $15
    		Buy Now

    BGD712 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGD712 NXP Semiconductors BGD712 - RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN Original PDF
    BGD712 NXP Semiconductors NXP Cross Reference Original PDF
    BGD712 Philips Semiconductors CATV amplifier module Original PDF
    BGD712 Philips Semiconductors 750 MHz, 18.5 dB Gain Power Doubler Amplifier Original PDF
    BGD712 Philips Semiconductors CATV amplifier module Scan PDF
    BGD712,112 NXP Semiconductors BGD712 - RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN Original PDF
    BGD712,112 NXP Semiconductors 750 MHz, 18.5 dB gain power doubler amplifier - Composite second order distortion (CSO): -63 dB; Composite triple beat (CTB): -58 dB; Description: 750 MHz, 18.5 dB gain Power Doubler ; Frequency range: 40 - 750 Hz; Gain: 18.5 dB; Return loss (input/output): 23/23 dB; Total current consumption (Itot): 410 mA; Package: SOT115J; Container: Bulk Pack Original PDF
    BGD712C NXP Semiconductors BGD712 - RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, SOT-115J, 7 PIN Original PDF
    BGD712C NXP Semiconductors NXP Cross Reference Original PDF
    BGD712C NXP Semiconductors Connecting people, protecting your network; NXP CATV C-family for the Chinese SARFT standard Original PDF
    BGD712C Philips Semiconductors 750 MHz, 18 dB gain push-pull amplifier Original PDF
    BGD712C,112 NXP Semiconductors BGD712C - 750 MHz, 18.5 dB gain power doubler amplifier, SOT115J Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BGD712C,112 NXP Semiconductors 750 MHz, 18.5 dB gain power doubler amplifier - Composite second order distortion (CSO): -63 dB; Composite triple beat (CTB): -62 dB; Description: 750 MHz, 18 dB gain Push-Pull ; Frequency range: 40 - 750 Hz; Gain: 18.2 - 18.8 dB; Return loss (input/output): 17/17 dB; Total current consumption (Itot): 410 mA; Package: SOT115J; Container: Bulk Pack Original PDF

    BGD712 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD712 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD712 OT115J 613518/04/pp9

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD712 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD712 OT115J SCA73 613518/04/pp8

    BGD712

    Abstract: BP317 DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD712 CATV amplifier module Product specification Supersedes data of 1999 Nov 02 2000 Jan 13 Philips Semiconductors Product specification CATV amplifier module BGD712 FEATURES PINNING - SOT115J • Excellent linearity


    Original     		PDF M3D252 BGD712 OT115J 125008/02/pp8 BGD712 BP317 DIN45004B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD712 CATV amplifier module Preliminary specification 1999 Oct 22 Philips Semiconductors Preliminary specification CATV amplifier module BGD712 PINNING - SOT115J FEATURES • Excellent linearity PIN


    Original     		PDF M3D252 BGD712 OT115J MSA319 BGD712 125008/00/05/pp8

    BGD712C

    Abstract: No abstract text available
    Text: BGD712C 750 MHz, 18.5 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage of 24 V DC . CAUTION


    Original     		PDF BGD712C OT115J BGD712C

    BGD712C

    Abstract: No abstract text available
    Text: BGD712C 750 MHz, 18.5 dB gain power doubler amplifier Rev. 02 — 16 August 2007 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage of 24 V DC . CAUTION


    Original     		PDF BGD712C OT115J BGD712C

    BGD712

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD712 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD712 OT115J 613518/04/pp9 BGD712 DIN45004B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD712 750 MHZ, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jan 13 2001 Oct 29 Philips Semiconductors Product specification 750 MHZ, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD712 OT115J MSA319 BGD712 SCA73 613518/03/pp8

    BGD712C

    Abstract: No abstract text available
    Text: BGD712C 750 MHz, 18 dB gain push-pull amplifier Rev. 01 — 2 May 2006 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken


    Original     		PDF BGD712C OT115J BGD712C

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    TDA8361E

    Abstract: tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent
    Text: PHILIPS SEMICONDUCTORS Product discontinuation Notice DN46 December 31, 2001 SEE DN46 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF VY27329-2 30-Sep-02 30-Dec-02 VY27340A2 VY27340A1 01-Jun-02 TDA8361E tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


    Original     		PDF S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A

    bgy888

    Abstract: cable tv amplifier with bge788 BGD502 BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N BGY66B
    Text: Philips Semiconductors New horizons in broadband communications Wideband modules for CATV applications Innovations in CATV power - the broadband revolution Broadband cable is today more than a delivery mechanism for TV channels. With the rapid rise in content delivery and interactive services, broadband cable access is becoming the accepted


    Original     		PDF

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


    Original     		PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    catv amplifier

    Abstract: BGD712 DIN45004B SOT-115J
    Text: Philips Semiconductors Product specification CATV amplifier module BGD712 FEATURES PINNING -SOT115J • Excellent linearity PIN • Extremely low noise 1 • Excellent return loss properties 2, 3 • Silicon nitride passivation 5 • Rugged construction 7, 8


    OCR Scan     		PDF BGD712 OT115J OT115J catv amplifier BGD712 DIN45004B SOT-115J

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification CATV amplifier module BGD712 FEATURES PINNING-SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input common 2, 3 • Silicon nitride passivation 5 • Rugged construction


    OCR Scan     		PDF BGD712 PINNING-SOT115J OT115J