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    BGA 48 "8 X 8" MEMORY Search Results

    BGA 48 "8 X 8" MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CYD36S36V18-167BGXI Rochester Electronics 1MX36 DUAL-PORT SRAM, 4ns, PBGA484, 27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-484 Visit Rochester Electronics Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy

    BGA 48 "8 X 8" MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIN 13715

    Abstract: 12197-507-XTD AMIS41683CANN1G N08L6182AB27I FS7145-02G-XTD valve positioners 11640-843-XTP vending machine fuji SEOUL 5630 LED DATASHEET 19699-002-XTP
    Text: Ultra-Low Power SRAMs Density Mb Organization Voltage Range Speed (ns) Features Package N08L6182A Part Number 8 512 Kb x 16 1.65 - 2.2 70 Dual CE 48-BGA N08L63W2A 8 512 Kb x 16 2.3 - 3.6 70 Dual CE 48-BGA N04L63W2A 4 256 Kb x 16 2.3 - 3.6 55 Dual CE 44-TSOP2, 48-BGA


    Original     		N08L6182A 48-BGA N08L63W2A N04L63W2A 44-TSOP2, N04L63W1A DIN 13715 12197-507-XTD AMIS41683CANN1G N08L6182AB27I FS7145-02G-XTD valve positioners 11640-843-XTP vending machine fuji SEOUL 5630 LED DATASHEET 19699-002-XTP PDF

    CS16LV20483

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 128k Word x 16 bit CS16LV20483 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Jan.20,2005 2.1 Remove 48PIN TSOP I /48PIN BGA(6*7mm) Jun.12,2006 2.2 Remove 48 Mini BGA 6*8 mm package type


    Original     		CS16LV20483 48PIN /48PIN CS16LV20483 500mV PDF

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash PDF

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI PDF

    IC1210-m128LQ

    Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
    Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV10008 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		IS61LV10008 48-ball 36-ball 44-pin IS61LV10008 IS61LV10008-12M IS61LV10008-12T IS61LV10008-12B IS61LV10008-10MI PDF

    Migration Guide for Intel StrataFlash Memory J

    Abstract: Intel StrataFlash Memory j3 Intel Stacked CSP 1997 28F008B3 28F008S5 28F016B3 28F128W18 28F160B3 28F320B3 28F800B3
    Text: PRODUCT SELECTION MATRIX P Intel 1.8V Wireless Flash W18/W30 R O D Intel StrataFlash® Memory (J3) U C T S Synchronous Intel StrataFlash® Memory (K3/K18) Advanced+ Boot Block (C3) X8 Organization X16 8 Mb 16 Mb 32 Mb Density 64 Mb 128 Mb 256 Mb Burst


    Original     		W18/W30) K3/K18) 128-bit Migration Guide for Intel StrataFlash Memory J Intel StrataFlash Memory j3 Intel Stacked CSP 1997 28F008B3 28F008S5 28F016B3 28F128W18 28F160B3 28F320B3 28F800B3 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV10008 1M x 8 HIGH-SPEED CMOS STATIC RAM ADVANCED INFORMATION FEBRUARY 2002 FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		IS61LV10008 48-ball 36-ball 44-pin IS61LV10008 reliammx12mm) 10mmx12mm) IS61LV10008-8MI IS61LV10008-8TI PDF

    eeprom flash

    Abstract: PUMA84SV64000 BGA 48 "8 x 8" memory flash 32 Pin PLCC 16mbit PUMA84SV32000 PUMA84
    Text: Part Numbering MSM 8 V 512 B B L I - 85 1. 2. 3. 4. 1. 9 8. 7. 6 5. TECHNOLOGY 6. BGA The memory technology is represented by a single character:S D SD Static RAM Dynamic RAM SYNCH DRAM 2. DATA WIDTH Bits 3. V CC VOLTAGE E F EEPROM FLASH Power 7. Blank Standard


    Original     		PUMA68 100ns 120ns 150ns PUMA68SV32000XB PUMA84S32000 PUMA84SV32000 PUMA84SV64000 MSM8512CB MSM8V512CB eeprom flash PUMA84SV64000 BGA 48 "8 x 8" memory flash 32 Pin PLCC 16mbit PUMA84SV32000 PUMA84 PDF

    IS61LV10248

    Abstract: IS61LV10248-10B IS61LV10248-10M IS61LV10248-10T IS61LV10248-12T IS61LV10248-8B IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T
    Text: ISSI IS61LV10248 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		IS61LV10248 48-ball 36-ball 44-pin IS61LV10248 IS61LV10248-8T IS61LV10248-8B IS61LV10248-10M IS61LV10248-10T IS61LV10248-10B IS61LV10248-10M IS61LV10248-10T IS61LV10248-12T IS61LV10248-8B IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T PDF

    IS61LV10248

    Abstract: IS61LV10248-10MI IS61LV10248-10T IS61LV10248-8B IS61LV10248-8BI IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T IS61LV10248-8TI IS61LV10248-10BI lead-free
    Text: ISSI IS61LV10248 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61LV10248 48-ball 36-ball 44-pin IS61LV10248 IS61LV10248-10MI IS61LV10248-10T IS61LV10248-8B IS61LV10248-8BI IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T IS61LV10248-8TI IS61LV10248-10BI lead-free PDF

    RSDS

    Abstract: DDR3 jedec EIA-644 SSTL-15 SSTL-18 1932-pin
    Text: Section II. I/O Interfaces This section provides information on Stratix IV device I/O features, external memory interfaces, and high-speed differential interfaces with DPA. This section includes the following chapters: • Chapter 6, I/O Features in Stratix IV Devices


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV10248 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61LV10248 48-ball 36-ball 44-pin IS61LV10248 PDF

    IS61LV10248

    Abstract: IS61LV10248-10MI IS61LV10248-10T IS61LV10248-8B IS61LV10248-8BI IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T IS61LV10248-8TI
    Text: ISSI IS61LV10248 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61LV10248 48-ball 36-ball 44-pin IS61LV10248 IS61LV10248-8M IS61LV10248-8T IS61LV10248-8B IS61LV10248-10MI IS61LV10248-10T IS61LV10248-8B IS61LV10248-8BI IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T IS61LV10248-8TI PDF

    841S101

    Abstract: No abstract text available
    Text: Comprehensive Portfolio from the Leader in PCI Express Solutions Integrated DeviceTechnology | | POWER MANAGEMENT ANALOG & RF INTERFACE & CONNECTIVITY | CLOCKS & TIMING | MEMORY & LOGIC | TOUCH & USER INTERFACE | VIDEO & DISPLAY | AUDIO PCI Express Timing Solutions


    Original     		100MHz REVB0111 841S101 PDF

    EP4SGX180

    Abstract: EP4SGX360 EP4SGX290 EP4SE230 EP4SE360 EP4SE530 EP4SGX70 1152-pin
    Text: 7. External Memory Interfaces in Stratix IV Devices SIV51007-3.1 This chapter describes external memory interfaces available with the Stratix IV device family and that family’s silicon capability to support external memory interfaces. To support the level of system bandwidth achievable with Altera ®


    Original     		SIV51007-3 EP4SGX180 EP4SGX360 EP4SGX290 EP4SE230 EP4SE360 EP4SE530 EP4SGX70 1152-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08T1630CxB 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit Features Overview The N08T1630CxB is an integrated memory


    Original     		N08T1630CxB 512Kx16 N08T1630CxB PDF

    IS61WV10248EDBLL

    Abstract: No abstract text available
    Text: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61WV10248EDBLL IS64WV10248EDBLL 48-ball 44-pin IS61/64WV10248EDBLL IS64WV10248EDBLL-10CTA3 IS64WV10248EDBLL-10CTLA3TSOP PDF

    IS61WV10248EDBLL-10TLI

    Abstract: No abstract text available
    Text: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61WV10248EDBLL IS64WV10248EDBLL 48-ball 44-pin IS61/64WV10248EDBLL usingS64WV10248EDBLL-10CTA3 IS64WV10248EDBLL-10CTLA3TSOP IS61WV10248EDBLL-10TLI PDF

    N04T1630C1BTR

    Abstract: N04T1630C2BZ TSOP2-44
    Text: N04T1630C1B N04T1630C2B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview Features The N04T1630C2B is an integrated memory device containing a low power 4 Mbit SRAM built


    Original     		N04T1630C1B N04T1630C2B 256Kx16 N04T1630C2B N04T1630C1BTR N04T1630C2BZ TSOP2-44 PDF

    M25P08

    Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
    Text: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010


    Original     		SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 W29EE512 SST39SF010; SST29EE010 AM29F010, M25P08 MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120 PDF

    LY62W128

    Abstract: No abstract text available
    Text: 第 1 頁，共 3 頁 Page:1/3 Update: May 22,2015 Low Power SRAM Density 64K 256K Configuration 8K x 8 32K × 8 Chip Select Dual CE Control CE#,CE2 Single CE Control (CE#) Power Supply 2.7V~5.5V 2.7V~5.5V 4.5V~5.5V 2.7V~3.6V 128K × 8 Dual CE Control (CE#, CE2)


    Original     		LY62W2568 LY62L2568 LY62L102516 LY62W102516 LY62102616 LY62L102616 LY62L102616A LY62L204916A LY62L205016A LY62W128 PDF

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K PDF

    Zn107

    Abstract: No abstract text available
    Text: .Advance information Features • Easy m em ory expansion w ith CE1, CE2, OE inputs • Intelliwatt active pow er reduction circuitry • 2.3V to 3.0V operating range JESD 8 -5 • JEDEC registered packaging - 3 2 -pin TSOP package - 48-ball 8m m x 6m m CSP BGA


    OCR Scan     		48-ball AS7C18 1-20017-A. Zn107 PDF