SAF3602
Abstract: nxp saturn V1043 SAF3601EL/V3040 SAF3602EL/V3040C518 V10-40
Text: SAF360X LF BG A2 23 Digital radio and processing system-on-chip Rev. 2 — 22 August 2014 Product short data sheet 1. General description The SAF360X is a monolithic integrated digital terrestrial radio processor. The SAF360X family includes different chip variants—SAF3600, SAF3601, SAF3602, SAF3604,
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SAF360X
SAF360X
SAF3600,
SAF3601,
SAF3602,
SAF3604,
SAF3606,
SAF3607.
SAF3602
nxp saturn
V1043
SAF3601EL/V3040
SAF3602EL/V3040C518
V10-40
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M38UC
Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
Text: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296
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MA-C-05010007
M38UC
Stellex M38UC
SM4T mixer
M38UC-150
a56 transistor 952
STELLEX SFD25
M38DC-400
transistor MY51
transistor MY52
M38UC-400
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48V to 12V buck boost converter
Abstract: WSL2512R0250FEA LTC3780EG 100ME100HC 48V DC to 12v dc converter circuit diagram 40 amp CDEP147NP-100MC-125 LTC3722-2 LTC3780 pc power suplly p channel mosfet 100v
Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION • The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in
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LTC4444
LTC4444
LTC4440/
LTC4440-5
LTC4441
LTC4442/LTC4442-1
4444f
48V to 12V buck boost converter
WSL2512R0250FEA
LTC3780EG
100ME100HC
48V DC to 12v dc converter circuit diagram 40 amp
CDEP147NP-100MC-125
LTC3722-2
LTC3780
pc power suplly
p channel mosfet 100v
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LTC4444-5
Abstract: LTC4444HMS8E LTC4444MPMS8E LTC4446 8H,D3 4444 diode bg 8pin msop package LTC4440-5 LTC1154
Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with
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LTC4444
LTC4449
LTC4441/LTC4441-1
LTC1154
4444fb
LTC4444-5
LTC4444HMS8E
LTC4444MPMS8E
LTC4446
8H,D3
4444 diode
bg 8pin msop package
LTC4440-5
LTC1154
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LTC4440-5
Abstract: LTC1154
Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current
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LTC4444
LTC4444
LTC4449
LTC4441/LTC4441-1
LTC1154
4444fb
LTC4440-5
LTC1154
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LTC4444-5
Abstract: LTC4444MP LTC4444MPMS8E LTC4446 4444 diode LTC4440-5 LTC1154
Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current
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LTC4444
LTC4444
LTC4449
LTC4441/LTC4441-1
LTC1154
4444fa
LTC4444-5
LTC4444MP
LTC4444MPMS8E
LTC4446
4444 diode
LTC4440-5
LTC1154
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BLF861
Abstract: UT70 rogers 5880 821 ceramic capacitor
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION
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M3D392
BLF861
OT540A
budgetnum/printrun/ed/pp12
BLF861
UT70
rogers 5880
821 ceramic capacitor
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PDF
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LTC4442
Abstract: LTC4440-5
Text: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down
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LTC4446
LTC4446
4446f
LTC4442
LTC4440-5
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MOSFET 4446
Abstract: switching regulator 12v 3A 660 tg diode LTC4440-5 100v boost ic 4446 36V high power cmos driver LTC3722-2 LTC3785 15v 5a dc boost
Text: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down
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LTC4446
LTC4446
lev00V
4446f
MOSFET 4446
switching regulator 12v 3A
660 tg diode
LTC4440-5
100v boost
ic 4446
36V high power cmos driver
LTC3722-2
LTC3785
15v 5a dc boost
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LTC4440-5
Abstract: LTC1154
Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current
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LTC4444-5
LTC4444-5
LTC4449
LTC4441/LTC4441-1
LTC1154
44445fc
LTC4440-5
LTC1154
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Dual Full-Bridge MOSFET Driver
Abstract: 48V to 12V buck boost converter LTC4444-5 LTC4444-5EMS8E LTC3780 LTC4444-5E LTC4444-5I LTC4444-5IMS8E LTC4446 LTC3901
Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current
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LTC4444-5
LTC4444-5
44445f
Dual Full-Bridge MOSFET Driver
48V to 12V buck boost converter
LTC4444-5EMS8E
LTC3780
LTC4444-5E
LTC4444-5I
LTC4444-5IMS8E
LTC4446
LTC3901
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Untitled
Abstract: No abstract text available
Text: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5
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T-33-2
KB72450210
KB72450
KB72450210
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BGY36
Abstract: BGY33 BGY32 BGY35 77209 vHF amplifier module
Text: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband am plifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 f i load. The modules consist of a tw o stage RF amplifier using npn transistor chips, together w ith lumpedelement matching components.
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BGY32
BGY33
BGY35
BGY36
BGY33
7110A2b
BGY36
77209
vHF amplifier module
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Philips BGY36 VHF Power amplifier Module
Abstract: BGY36 BGY33 Philips bgy32 BGY35 BGV33 BGY32 12p capacitor VB212
Text: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband amplifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The deviceswill produce 18 W output into a 50 Î2 load. The modules consist of a two stage RF amplifier using npn transistor chips, together with lumpedelement matching components.
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BGY32
BGY33
BGY35
BGY36
7110fl2b
BGY36
Philips BGY36 VHF Power amplifier Module
Philips bgy32
BGV33
12p capacitor
VB212
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5V VSG MOSFET
Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK203-50X
OT263
T0220
5V VSG MOSFET
high side switch
PowerMOS transistor TOPFET high side switch
BUK203-50X
TOPFET high side switch
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K203
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured
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BUK203-50Y
BUK203-50Y
K203
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PowerMOS transistor TOPFET high side switch
Abstract: BUK203-50Y
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK203-50Y
BUK203-50Y
OT263
T0220
PowerMOS transistor TOPFET high side switch
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PowerMOS transistor TOPFET high side switch
Abstract: 100-P BUK200-50X
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK200-50X
OT263
T0220
PowerMOS transistor TOPFET high side switch
100-P
BUK200-50X
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK203-50X
BUK203-5QX
BUK203-50X
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BU 103 A transistor
Abstract: transistor BG 23 0/transistor BG 23
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK200-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK200-50Y
BU 103 A transistor
transistor BG 23
0/transistor BG 23
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BUK202-50X
Abstract: PowerMOS transistor TOPFET high side switch BUK202
Text: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK202-50X
OT263
T0220
BUK202-50X
PowerMOS transistor TOPFET high side switch
BUK202
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pfe 225
Abstract: K203 EUK203-50X
Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK203-50X
BUK203-50X
pfe 225
K203
EUK203-50X
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Transistor Vb
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK202-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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OCR Scan
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BUK202-50Y
Transistor Vb
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buk201
Abstract: PowerMOS transistor TOPFET high side switch BUK201-50X
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK201-50X
OT263
T0220
buk201
PowerMOS transistor TOPFET high side switch
BUK201-50X
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