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    BFY640 ES Search Results

    BFY640 ES Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFY640 (ES) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: --; Package: Micro-X; VCEO (max): 4.0 V; IC(max): 50.0 mA; Ptot (max): 200.0 mW; fT (typ): 40.0 GHz; Original PDF

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    Catalog Datasheet MFG & Type PDF Document Tags

    BFY640-04

    Abstract: bfy640 BFY640 ES
    Text: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ


    Original     		PDF BFY640 BFY640-04 bfy640 BFY640 ES

    Untitled

    Abstract: No abstract text available
    Text: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


    Original     		PDF BFY640 BFY640B

    npn transistor high current

    Abstract: transistor "micro-x" "marking" 3 BFY640 germanium microwave Micro-X Marking E RF TRANSISTOR NPN MICRO-X low noise Micro-X marking "K"
    Text: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


    Original     		PDF BFY640 BFY640B npn transistor high current transistor "micro-x" "marking" 3 germanium microwave Micro-X Marking E RF TRANSISTOR NPN MICRO-X low noise Micro-X marking "K"

    Untitled

    Abstract: No abstract text available
    Text: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ


    Original     		PDF BFY640

    Untitled

    Abstract: No abstract text available
    Text: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


    Original     		PDF BFY640 BFY640B

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635