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    microwave transistor bfy193

    Abstract: No abstract text available
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 8 GHz F = 2.3 dB at 2 GHz 4


    Original     		PDF BFY193 BFY193 Q62702F1610 QS9000 microwave transistor bfy193

    Untitled

    Abstract: No abstract text available
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY193

    BFY193

    Abstract: No abstract text available
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified


    Original     		PDF BFY193 BFY193

    Microwave PIN diode

    Abstract: 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation
    Text: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: family given in bracketts • CGY40: (CGY41), Side 2 • CFY66: (CFY67), Side 3 • BXY42: (BXY43, BXY44), Side 4 - 5 • BFY193: (BFY180, BFY280,


    Original     		PDF CGY40: CGY41) CFY66: CFY67) BXY42: BXY43, BXY44) BFY193: BFY180, BFY280, Microwave PIN diode 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation

    microwave transistor bfy193

    Abstract: BFY193
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • Space Qualified


    Original     		PDF BFY193 Q62702F1610 QS9000 microwave transistor bfy193 BFY193

    BFY193

    Abstract: No abstract text available
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY193 BFY193

    A03 transistor

    Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor

    GaAs Amplifier Micro-X Marking k

    Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
    Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components


    Original     		PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"

    GaAs Amplifier Micro-X Marking k

    Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
    Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components


    Original     		PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3

    BFY193

    Abstract: BFY183
    Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 Q62702F1609 QS9000 BFY193 BFY183

    Q62702F1609

    Abstract: No abstract text available
    Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 BFY183 Q62702F1609 Q62702F1713 QS9000

    microwave transistor bfy193

    Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420

    SIEMENS MICROWAVE RADIO 8 GHz

    Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING

    siemens spc 2

    Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
    Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are


    Original     		PDF de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz


    OCR Scan     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY193 GXM05552

    k-band gaas schottky diode

    Abstract: transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES
    Text: SIEMENS HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 1870 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 1870 1870 1871 1871


    OCR Scan     		PDF BAS40, BXY42, BFY180, BFY193, BFY405, CFY25, CFY66, CLY29, CLY27, HPAC140 k-band gaas schottky diode transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES

    BXY 36 300

    Abstract: cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx
    Text: SIEMENS 4 HiRel Discrete and Microwave Semiconductors Selection Guides for HiRel Discrete Semiconductors The Selection Guide provides main maximum ratings and electrical key parameters typical data . 4.1 HiRel Silicon Diodes Low Barrier Silicon Schottky Diodes


    OCR Scan     		PDF BAT15-013/014 BAT15-033/034 BAT15-043/044 BAT15-063/064 BAT15-073/074 BAT15-093/094 BAT15-103/104 MWP-25 MWP-35 BXY 36 300 cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx