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    BFX 63 Search Results

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    Hirose Electric Co Ltd AP109B-FX15-3032(63)

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    BFX 63 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFX63 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFX63 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BFX63 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BFX 63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DG TEEK

    Abstract: 4lgj roe EYF 50E71
    Text: WNZPVPW\LU e433VV @XUUX_ JSLQ\ KaYP <TLVP\PZ e433VV @XUUX_ [SLQ\ \aYP WNZPVPW\LU IX\LZa PWNXOPZ d>PL\]ZP[ _+J>:L >FNBJGFE>FL:D J>KBKL:F<> _,B@A KL:;BDBLQ G? GMLHML _4H><B:DDQ MKBF@ BF *D>N:LGJ , /:0 KTVPZ HUPL[P ZPLO -;L]\TXW QXZ aX]Z [LQP\a- TW XYPZL\TXW


    Original     		PDF e433VV fY24MYib 45057QBA 50e717 DG TEEK 4lgj roe EYF 50E71

    129 gez

    Abstract: SMCJ170A
    Text: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic


    Original     		PDF SMCJ26CA SMCJ28CA SMCJ30CA SMCJ33CA SMCJ36CA SMCJ40CA SMCJ43CA SMCJ45CA SMCJ48CA SMCJ51CA 129 gez SMCJ170A

    BFX89

    Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


    OCR Scan     		PDF 23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684

    BFX60

    Abstract: Transistor BFX 90 bfx 63 Q60206-X60
    Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge­ häuse elektrisch isoliert.


    OCR Scan     		PDF BFX60 Q60206-X60 Transistor BFX 90 bfx 63 Q60206-X60

    Transistor BFX 90

    Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


    OCR Scan     		PDF 23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


    OCR Scan     		PDF BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier

    SO-104

    Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
    Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5


    OCR Scan     		PDF BLW11 O-131 O-129 O-117 SO-104 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M

    CJW SOT-23

    Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
    Text: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89


    OCR Scan     		PDF CB-71 O-11/' O-117 CB-233 BFP91* CB-233 CJW SOT-23 bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11

    S0642

    Abstract: pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89
    Text: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89


    OCR Scan     		PDF CB-71 O-11/' O-117 BFR92A BFH93A BFS18 BFS19 BF654 BFS20 S0642 pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89

    BFX97A

    Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
    Text: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30


    OCR Scan     		PDF ES33A BFR11 BFX94A BFX95A BFX96A BFX97A OTO-39 15/2N 16/2N BFR20 BFR21 BFX39 BSX19 bsx30

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF

    BC137

    Abstract: bc116 BC 287 BC221 bc126 BC 461-5 bc327 850mW BC116A BC 143
    Text: General Purpo/e Tron/i/tor/ T 0 -I0 5 TO -5 e Electrical Characteristics @ Maxim um Ratings r o « 25 C ' N T Y P E NO. Pd •c b v c bo l v c eo b v ebo PN P hp E @ V c e @ l c BC BC BC BC BC 116 116A 126 137 139 300m W 300m W 300m W 300m W 700m W 600m A


    OCR Scan     		PDF T0-I05 300mW 600mA 150mA 200MHz O-105 BC137 bc116 BC 287 BC221 bc126 BC 461-5 bc327 850mW BC116A BC 143

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    transistor BC 584

    Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
    Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4


    OCR Scan     		PDF bDT17fla O-92F to-02 melf-002. transistor BC 584 TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


    OCR Scan     		PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    2N5859

    Abstract: 2N5861 bc140 BC441 transistor BD115 BFW16A 2N5784 2N5785 2N5786 2N6190
    Text: Small Signal Transistors TO-39 Case Continued T Y P E NO. D E S C R IP T IO N v CBO (V ) v C EO V e (V) b h :E O • C BO @ V C B O <V) (HA) (V ) @ IC @ vCE <mA) (V) VC E (S A T ) @ lc (V ) (m A ) *'C E O *VC E R *T c ob ton *off NF (MHz) (pF> (ns) (ns)


    OCR Scan     		PDF 2N5784 2N5785 2N5786 2N5859 2N5861 BFS95 BFT28C BFW16A BFW44 BFX34 bc140 BC441 transistor BD115 2N6190

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram

    pin configuration BFW 11

    Abstract: BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 BFT50 BFX89 2N5109
    Text: 1. 1000 MHz C LA S S A LOW NOISE FOR SM ALL SIG N AL APPLICATIO NS Typ« I Pockog* ptot V B R C EO m ax. m in. (m W ) (V ) fr @ (M Hz) |m A ) C 22b* (pf) (V ) UM* (^B) (m A) > 15 6 g N TO-72 200 15 > 600 4 < 1,7* 10 2N 3570 2N 357) 2N 3572 N N N TO-72


    OCR Scan     		PDF BFX89 BFT50 CB-233 BFP91* CB-233 pin configuration BFW 11 BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 2N5109

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    lm3i7

    Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
    Text: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24


    OCR Scan     		PDF IN4001CSMU IN4003CSMD 60DCSM 222IA 2N2221DCSM 2N2222ADCSM 2N2222DCSM 2N2369ADCSM 2N2453D 2N2639DCSM lm3i7 BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M

    BC639 18

    Abstract: 2N929 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72
    Text: AF transistors Continued Type Group Structure FigNr. Maximum ratings C h aracteristics ^tot at 7C mA ^CEO V fj at MHz 7C mA af e at /q and LU 'am b = +45° c W mA F at dB / kHz BC 635 NPN 27 1.06) 1000 45 50 50 40-250 150 2 - - BC 636 PNP 27 1.06) 1000 45


    OCR Scan     		PDF BCW60 BCW61 BC639 18 2N929 2N930 BCX70 BCX71 BCY58 BCY59 BCY72