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    BFX 50 Search Results

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    BFX 50 Price and Stock

    SiTime Corporation SIT9121AI-2BF-XXS156.250000G

    Standard Clock Oscillators -40 to 85C, 3225, 10ppm, 2.25V-3.63V, 156.25MHz, ST, LVDS, 250 pcs T&R 8 mm
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    Mouser Electronics SIT9121AI-2BF-XXS156.250000G 428
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    Vishay Intertechnologies 5043CX33K00J12BFX

    Metal Film Resistors - Through Hole 1/4Watt 33Kohms 5%
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    Mouser Electronics 5043CX33K00J12BFX
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    Infineon Technologies AG CY15B104QN-50BFXI

    F-RAM Y
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    Infineon Technologies AG CY15V104QN50BFXITXUMA1

    F-RAM Y
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    Infineon Technologies AG CY15B104QN-50BFXIT

    F-RAM Y
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    BFX 50 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFX50 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFX50 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFX50 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFX50 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFX50 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFX50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFX50 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    BFX 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFX60

    Abstract: Q60206-X60 H7B marking H7B transistor H7B* marking microphone
    Text: SIEMENS BFX 60 NPN Silicon RF Transistor • For broadband amplifiers at collector currents up to 15 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFX 60 BFX 60 Q60206-X60 Pin Configuration 1 2


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    PDF BFX60 BFX60 Q60206-X60 023SbOS fl23SbD5 H7B marking H7B transistor H7B* marking microphone

    BFX40

    Abstract: bfx 33 BFX38 BFX39 BFX41 LE17
    Text: SEMELAB yU D TiO BFX BFX BFX BFX 38 39 40 41 Coventry Road, Lutterworth, Leicestershire LE17 4JB Tel: 04555 4711. Telex: 341927. Fax: (04555) 2612 SILICON PLANAR PNP GENERAL PURPOSE TYPES The B F X 3 8 , B F X 3 9 , B F X 4 0 and B F X 4 1 are silicon planar epitaxial PNP transistors in Jedec


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    PDF BFX38, BFX39, BFX40 BFX41 BFX38 BFX39 BFX41 bfx 33 LE17

    BFX90

    Abstract: High-Voltage Amplifiers BFX91 BFX 50 G3168
    Text: BFX90 BFX91 SILICON PLANAR PNP H IG H -VO LTA G E AM PLIFIERS The BFX 90 and BFX 91 are silicon planar epitaxial PNP transistors in Jedec T O -1 8 BFX 90 and Jedec T O -3 9 (BFX 91) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity


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    PDF BFX90 BFX90 BFX91 G-3168 High-Voltage Amplifiers BFX91 BFX 50 G3168

    BFX90

    Abstract: BFX91
    Text: BFX90 BFX91 SILICON PLANAR PNP H IG H - V O L T A G E A M P L IF IE R S The BFX 90 and BFX 91 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFX90 and Jedec TO-39 (BFX 911) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity


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    PDF BFX90 BFX90 BFX91 G-2065 -10/uA BFX91

    BFX89

    Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


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    PDF 23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684

    BFX60

    Abstract: Transistor BFX 90 bfx 63 Q60206-X60
    Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge­ häuse elektrisch isoliert.


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    PDF BFX60 Q60206-X60 Transistor BFX 90 bfx 63 Q60206-X60

    BFX48

    Abstract: No abstract text available
    Text: BFX 48 SILICON PLANAR PNP HIG H-FREQ UENCY A M PLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec TO -18 metal case. It is suitable for a wide range of applications including low noise, low current high gain RF and wide band pulse amplifiers.


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    PDF BFX48 BFX48

    Transistor BFX 41

    Abstract: Transistor BFX 25 Q60206-X55 B63310-A3004-X025 B63310 Scans-0010547
    Text: B F X 55 N P N i-T ran sistor für V H F -E n d stu fe n in A ntennenverstärkern BFX 55 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 5 C 3 DIN 41 873 TO-39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor BFX 55


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    PDF Q60206-X55 150mA Transistor BFX 41 Transistor BFX 25 Q60206-X55 B63310-A3004-X025 B63310 Scans-0010547

    BFX59

    Abstract: bfx 63 BFX69A BFX69
    Text: BFX69 BFX69A SILICON PLANAR NPN G E N E R A L PURPOSE A M P L IF IE R S The BFX 69 and BFX 69A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier applications over a wide range o f voltage and current.


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    PDF BFX69A BFX69 BFX59 bfx 63 BFX69A

    BFX59

    Abstract: Transistor BFX 25 BFX59F
    Text: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran­


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    PDF Q60206-X59 Q60206-X59-S5 BFX59 Transistor BFX 25 BFX59F

    transistor bfx 73

    Abstract: BFX20 Transistor BFX 25
    Text: BFX 20 SILICON PLANAR NPN 450 MHz LOW-NOISE, SMALL SIGNAL AMPLIFIER The BFX 20 is a high frequency silicon planar NPN transistor in Jedec T O -7 2 metal case. It is specifically designed fo r low noise, small signal am plifiers and is p a rticularly suitable fo r the


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    PDF BFX20 transistor bfx 73 BFX20 Transistor BFX 25

    BFX40

    Abstract: BFX41 BFX38 BFX39 BFX40-BFX41 BFY56A
    Text: BFX 38 BFX 39 SILICON PLANAR PNP BFX 4? HIGH-VOLTAGE, GENERAL PURPOSE TYPES The B F X 3 8 , B F X 3 9 , B F X 4 0 a n d B F X 4 1 are silic o n p lanar e p ita x ia l PNP tran sisto rs in Jedec T O -3 9 m eta l case, designed fo r a w id e v a rie ty o f a p p lica tio n s. T h e y are p a rtic u la rly useful as


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    PDF BFX38, BFX39, BFX40 BFX41 BFY56A BFX38 BFX40 BFX39 BFX41 temperatur500 BFX40-BFX41

    BFX89

    Abstract: F296 Q62702 Scans-0010548 transistor TO-72 Transistor BFX Transistor BFX 41
    Text: NPIVI-Transistor fü r A n ten n en verstärker BFX 89 BFX 89 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allge­ meine Anwendungen bis in den GHz-Bereich geeignet, z.B. für Antennen- und Hochfre­


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    PDF BFX89 Q62702â F296 Q62702 Scans-0010548 transistor TO-72 Transistor BFX Transistor BFX 41

    Transistor BFX 90

    Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


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    PDF 23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor

    toshiba dram

    Abstract: TC5118165 TC5118165B tc5118165bj
    Text: TOSHIBA DRAM Module AC Conditions No. 30 TC5118165BJ/BFX TC51V18165BJ/BFT Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14 Access Time from CAS -


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    PDF TC5118165BJ/BFX TC51V18165BJ/BFT THMxxxxxx-60 THMxxxxxx-70 toshiba dram TC5118165 TC5118165B tc5118165bj

    tfk 325

    Abstract: BFX340 bfx 34 tfk B tfk transistor BFX34
    Text: W BFX 34 O Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: H ochstrom schalter, Relaistreiber, Leistungsverstärker, Strom bis 5 A Applications: High current switches, relay drivers, and p o w e r am plifiers, current up to 5 A


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    PT8740

    Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
    Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72


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    PDF T8710 SD1238 2N5126 2N918 2N5642 BM100-28 MM1603 MRF633 SD1145 PT8717 PT8740 PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828

    BFX48

    Abstract: No abstract text available
    Text: BFX48 SILICON PLANAR PNP H IGH-FREQUENCY AMPLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case. It is suitable fo r a wide range o f applications including lo w noise, low current high gain RF and wide band pulse am plifiers.


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    PDF BFX48 BFX48

    BFX62

    Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
    Text: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.


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    PDF BFX62 Q60206-X -C12e BFX62 Transistor BFX 25 Transistor BFX 4 Transistor BFX

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


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    PDF BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier

    Untitled

    Abstract: No abstract text available
    Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le Cl2e l\IF ImA) C22b* (pF) @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15


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    BFX34

    Abstract: No abstract text available
    Text: r z 7 S C S -T H O M S O N ^ 7 # BFX34 m HIGH CURRENT, GENERAL PURPOSE TRANSISTOR D E S C R IP T IO N The BFX 34 is a silicon epitaxial planar NPN tran­ sistor in Jedec TO-39 metal case, intended for high current applications. Very low saturation voltage and high speed at high


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    PDF BFX34 BFX34

    BF272

    Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
    Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72


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    PDF BF272 BF1300 CB-146 ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199

    bfr 91

    Abstract: THOMSON-CSF CANAL
    Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le l\IF Cl2e @ C22b* ImA) (pF) (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15


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