Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BFW GLASS Search Results

    BFW GLASS Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    MD82510/B Rochester Electronics LLC Serial I/O Controller, 1 Channel(s), CMOS, CDIP28, GLASS SEALED, DIP-28 Visit Rochester Electronics LLC Buy
    5043/BEA Rochester Electronics LLC SPDT, 2 Func, 1 Channel, CMOS, CDIP16, GLASS, DIP-16 Visit Rochester Electronics LLC Buy

    BFW GLASS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CCFL ● Characteristics Diagrams Lamp voltage - Lamp current 25°C, Ni-cup electrode (319 mm lamp) 180 850 160 800 Lamp voltage V (Vrms) Luminance uniformity (%) Lamp surface luminance - lamp diameter 140 120 100 80 60 40 2.6(2.0)-60T 3.4(2.4)-60T 4.0(3.0)-60T


    Original     		PDF BaMg2Al10

    Untitled

    Abstract: No abstract text available
    Text: 1.5SMCJ5.0-LF THRU 1.5SMCJ188A-LF 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES z PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 z GLASS PASSIVATED JUNCTION z LOW PROFILE z EXCELLENT CLAMPING CAPABILITY z LOW INCREMENTAL SURGE RESISTANCE


    Original     		PDF 5SMCJ188A-LF 5SMCJ100

    BEZ DIODES

    Abstract: marking GFQ marking Bdy
    Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor


    Original     		PDF E135015 RS-481-A BEZ DIODES marking GFQ marking Bdy

    GEZ DIODES

    Abstract: GEZ 63 DIODES GEZ 304 DIODES
    Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor


    Original     		PDF E135015 RS-481-A DO214AB UL94V-0 5SMCJ160 5SMCJ160A 5SMCJ170 5SMCJ170A GEZ DIODES GEZ 63 DIODES GEZ 304 DIODES

    GEZ DIODES

    Abstract: bgy 44
    Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor


    Original     		PDF E135015 RS-481-A DO214AB UL94V-0 MIL-STD-750 GEZ DIODES bgy 44

    GEZ DIODES

    Abstract: GHR TVS GEZ 304 DIODES marking GFQ marking BGG tvs
    Text: TVS Diodes 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • RoHS Compliance designated by suffix “F” • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction


    Original     		PDF E135015 RS-481-A DO214AB UL94V-0 MIL-STD-750 GEZ DIODES GHR TVS GEZ 304 DIODES marking GFQ marking BGG tvs

    BJG 36

    Abstract: No abstract text available
    Text: SMCJ5.0 thru SMCJ440CA Pb Free Plating Product Pb SMCJ5.0 thru SMCJ440CA 1500W Surface Mount Transient Voltage Suppressors SMC/DO-214AB Mechanical Characteristics z CASE: Void-free, JEDEC DO-214AB Molded Plastic over glass passivated junction. .245 6.22


    Original     		PDF SMCJ440CA SMC/DO-214AB DO-214AB SMCJ400 SMCJ400C SMCJ400A SMCJ400CA SMCJ440 SMCJ440C BJG 36

    1.5SMCJ90

    Abstract: bes 960 GEK 56
    Text: 1.5SMCJ5.0 THRU FRONTIER ELECTRONICS CO., LTD. 1.5SMCJ170CA 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! GLASS PASSIVATED JUNCTION ! LOW PROFILE ! EXCELLENT CLAMPING CAPABILITY


    Original     		PDF 5SMCJ170CA 5KE11C 300US 1.5SMCJ90 bes 960 GEK 56

    TRANSISTOR BFW 11

    Abstract: BFW92 Transistor BFw 92 bfw 10 transistor transistor BFW 10 bfw 16 transistor BFW 100 transistor "RF Amplifiers" Q62702-F321 BFW 92
    Text: BFW92 NPN Silicon planar RF transistor BFW 92 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41867 fo r use as RF am plifiers up in to the GHz range, e.g. fo r broadband antenna amplifiers. T ype O rd e r n u m b e r BFW 92


    OCR Scan     		PDF BFW92 BFW92 Q62702-F321 00K/W TRANSISTOR BFW 11 Transistor BFw 92 bfw 10 transistor transistor BFW 10 bfw 16 transistor BFW 100 transistor "RF Amplifiers" Q62702-F321 BFW 92

    TRANSISTOR BFW 11

    Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
    Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use


    OCR Scan     		PDF 053SbOS Q62702-F365 a23SbQS 00DM73b TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83

    BFW92

    Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
    Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,


    OCR Scan     		PDF 6535bQ5 2N6621. Q62702-F321 Q68000-A4669 temperatu077 QQG4733 BFW92 BFW92 TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q68000-A4669 6621 transistor bfw 90

    BFW93

    Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
    Text: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,


    OCR Scan     		PDF 053SbOS f-31-IS Q62702-F365 Q00M73b BFW93 BFW93 transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60

    Transistor BFw 92

    Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
    Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain


    OCR Scan     		PDF 596/0776A1 470pF 20x8x0 Transistor BFw 92 TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor

    Daico Industries da0296

    Abstract: DA0296 bfw glass 18DB
    Text: 26E DAICO INDUSTRIES INC BbGMTSD 0QG1541 2 « D A I D T - 7 1 - U - 01 RF IN/OUT DA0296 6 SECTION ATTENUATOR BFW/OUr © 2J> © - PINS 21-37 CONNECTED TO CASE - ^*1^ li J li J <T°"°ÌVIf li (I , Il (I I ^T° I) ll ~ l •40-150 MHz • 30 nSEC SWITCHING SPEED


    OCR Scan     		PDF 0QG1541 DA0296) DA0296-RL) ------T-71-U-01 DA0296 Daico Industries da0296 bfw glass 18DB

    TRANSISTOR BFW 16

    Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90
    Text: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,


    OCR Scan     		PDF 6535bQ5 2N6621. Q62702-F321 Q68000-A4669 QQG4733 BFW92 TRANSISTOR BFW 16 2N6621 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90

    BFW 100 transistor

    Abstract: bfw92
    Text: BFW92 ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to G H z range. Features • High pow er gain • Low noise figure


    OCR Scan     		PDF BFW92 D-74025 20-Jan-99 BFW 100 transistor bfw92

    Untitled

    Abstract: No abstract text available
    Text: BRIDGE RECTIFIER Part numbering system for all parts excluding JEDEC registered, ProElectron and industry standard parts. 1. MINI BRIDGE MBYA-ZZZZ 4. not shown in databook KBPH 7. GBU/KBU ABUXV-ZZB R = Fast Recovery MB = Mini Bridge package style 2 = 200V


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 5 0 0 W A T T S U R F A C E M O U N T SMCJ Series Features • I ■ 1500 watt peak pulse power dissipation Available in voltages from 5.0V to 170V Unidirectional and bidirectional ■ ■ ■ Glass passivated junction Low clamping factor Each device 100% surge tested


    OCR Scan     		PDF SMCJ150A SMCJ130 SMCJ130A SMCJ160 SMCJ160A SMCJ170 SMCJ170A DD01Dfl3

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SMCJ5.0 - SMCJ170CA 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time


    OCR Scan     		PDF SMCJ170CA IL-STD-202, 300ns DS19003 0-SMCJ170CA

    Untitled

    Abstract: No abstract text available
    Text: SMCJ5.0 - SMCJ170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS INCORPORATED Features • • • • • • 1500 W atts Peak Pulse Pow er Dissipation 5.0 - 1 7 0 V Standoff Voltages Constructed with Glass Passivated Die Excellent Clamping Capability


    OCR Scan     		PDF SMCJ170CA SMCJ150 SMCJ160 SMCJ170

    SMCJ GFR

    Abstract: SMCJ9.0 marking Bdy marking code bdy SMCJ
    Text: SMCJ5.0 -SMCJ170CA VISHAY 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR / l Ï t e m Î t I POWER SEHCONNJCTOR/ Features 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available


    OCR Scan     		PDF -SMCJ170CA MIL-STD-202, DS19003 0-SMCJ170CA SMCJ GFR SMCJ9.0 marking Bdy marking code bdy SMCJ

    SMCJ GFR

    Abstract: smcj bfk marking code BGL bfw glass marking code BFK SMCJ12 vishay smcj smcj 214 ghk SMCJ10 SMCJ11
    Text: SMCJ5.0 - SMCJ170CA VISHAY 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR LITEMZI y POWER SEMICONDUCTOR Features 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available


    OCR Scan     		PDF -SMCJ170CA MIL-STD-202, DS19003 0-SMCJ170CA SMCJ GFR smcj bfk marking code BGL bfw glass marking code BFK SMCJ12 vishay smcj smcj 214 ghk SMCJ10 SMCJ11

    smcj 214 ghk

    Abstract: BEM 45 BFW 100A marking code bdu bdx 338 SMCJ GFR GEK DIODES bfw glass tc 137/10 SMCJ11
    Text: II,MCP SMCJ5.0 - SMCJ170CA SERIES W IU SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS INCO RPO RATED Features 1500 W atts Peak Pulse Pow er Dissipation 5.0 - 170 V Standoff Voltages Constructed with Glass Passivated Die Excellent Clamping Capability Fast Response Tim e


    OCR Scan     		PDF MIL-STD-202 at133 SMCJ120 SMCJ130 SMCJ150 SMCJ160 SMCJ170 smcj 214 ghk BEM 45 BFW 100A marking code bdu bdx 338 SMCJ GFR GEK DIODES bfw glass tc 137/10 SMCJ11