aui rj45
Abstract: 100BASE-SX iso 10360-6 10BaseFL 100base 8930 m 9835 BMT-1022 BMT-1036 BMT-1036-F
Text: BFT BMT BATM Advanced Communications series Vi s i t o u r We b s i t e : h t t p : / / w w w. b a t m . c o m User-selectable heartbeat SQE test Distance of up to 100 km (single-mode long haul) HOT PRODUCT In s t i t u t io n Q ua lity rm SI ISO 9001 Is ra el
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AUI/RJ45)
10Base2
BMT-1036-F
BMT-1036-V
10BaseFL
AUI/VF-45,
DAS-BMT-1036-06
aui rj45
100BASE-SX
iso 10360-6
100base
8930
m 9835
BMT-1022
BMT-1036
BMT-1036-F
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G547
Abstract: A-LFT-1448 SAE-16 A-LFT-1208 6RZ10 PAF16P10SY2 S20 K25 tube az1 KM10 SKB 12/08
Text: ST Tank-Mounted Suction Filter 20 gpm 75 L/min OPTIONAL DIRT ALARM OR ELECTRIC SWITCH 4.06 MAX. 103 OUT OUT .12 (3) THICK GASKET 1.88 (48) 6.25 MAX. (159) 45° TYP .44 (11) Ø ON A 6.25 (159) Ø B.C. (4) MOUNTING HOLES 6.38 PORT TO PORT (162) 1K = 8.81 (224)
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ST1K10SY.
G547
A-LFT-1448
SAE-16
A-LFT-1208
6RZ10
PAF16P10SY2
S20 K25
tube az1
KM10
SKB 12/08
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bss7
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JEf RSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 COU.ECTOR 3 >-&\J n i EMITTER BSS71 MAXIMUM RATINGS Rating Symbol value Unit VCEO VCBO vEBO 200 2*) 6.0 Vdc Collector Currant— Contiruoui
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BSS71
-25-C
V14JU
bss7
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BFR 965
Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Text: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817
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OD-123
OT-23
OT-143
OT-89
BFR 965
mpsa 46
BAW 62 SOT23
4148 SOD-123
bc 544
BRF91A
smd bf
MPS 808
BC 241
BFS 505 SMD
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bft97
Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
Text: SIEM ENS BFT 97 NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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BFT97
BFT97
Q62702-F514
fl235bGS
D0b74SS
fl23Sb05
00b745b
transistor BFT 97
BFT 97
marking t54
20mAVCE
transistor marking zs
Transistor BFT 10
MARKING CODE t54
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F0411
Abstract: i87C51 at89c52 base clock circuit LQ 425 B8 p87c528 replacement TQFP Package 44 lead 87c51 PLCC-44 SST89C54 SST89C58 SST89C59
Text: FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 5 m Advance Inform ation FEATURES: • • Multi-Purpose 8-bft 8051 Family Compatible Microcontroller Unit MCU with Embedded SuperFlash Memory for Flexibility Fully Software and Development Toolset Compatible as well as Pin-For-Pin Package
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FlashFlex51
SST89C54
SST89C58
SST89C59
128-Byte
64-Byte
87C5x
F0411
i87C51
at89c52 base clock circuit
LQ 425 B8
p87c528 replacement
TQFP Package 44 lead 87c51
PLCC-44
SST89C59
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Untitled
Abstract: No abstract text available
Text: g M O T O R O M C54F/74F259 L A A d v a n ce Information 8-BIT ADDRESSABLE LATCH 8-BfT ADDRESSABLE LATCH FAST DESCRIPTION— The MC54F/74F259 is a high-speed 8-bit address able latch designed for general purpose storage applications in digital system s. It is a multifunctional device capable o f storing
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MC54F/74F259
93L34
MC54F/74F259
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MSM44400AJ
Abstract: 36FJ
Text: MITSUBISHI LSIs MH1M36FJ-8,- 10 37748736-BIT 1048576-WORD BY 36- BFT DYNAMIC RAM DESCRIPTION The M H 1M 36FJ is a 1 0 4 8 5 7 6 -w ord x 3 6 - bit dynamic RAM. PIN CONFIGURATION(TOP VIEW) This consists o f nine industry standard 1 M x 4 - bit dynamic RAMs in SOJ and one driver in SOP.
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MH1M36FJ-8
37748736-BIT
1048576-WORD
MH1M36FJ-
MH1M36FJ
MSM44400AJ
36FJ
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673103NL
Abstract: No abstract text available
Text: 1 -Megabit Dynamic RAM Control le r / Driver 673103 6 7 3 1 03A Ordering inform ation F eatures/ Benefits • Supports up to 1 M DRAMs PART NUMBER • Capable of addressing up to 8 M 16-bft words or 8 M bytes PACKAGE TEMPERATURE 673103 52D, • On-chip capacitive-load drivers capable of driving up to 88
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16-bft
30-nsec
35-nsec
73103A
tpoF32
673103NL
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Untitled
Abstract: No abstract text available
Text: - « v u n o n I • HYM532814A M-Series 8Mx32-bft CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5332814A is a 8M x 32-bit ED O mode C M O S DRA M module consisting of sixteen HY5117404A in 24/26 pin SO J or TSOP1I on a 72 pin gtass-epoxy printed circuit board. O.tftF and 0.01|iF decoupling are
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HYM532814A
8Mx32-bft
HYM5332814A
32-bit
HY5117404A
HYM532814AM/ASLM/ATM/ASLTM
YM532814AMG/ASLMG/ATMG/ASLTMG
002f3
HYM532814A
32814A
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cf8h
Abstract: pci0646u
Text: MAN-00646U-000 Rev. 0.9 April 21, 1997 PCI0646U Bus Master Ultra DMA PCI-IDE Chip Specification CMD Technology, Inc. 1 Vanderbilt Irvine, California 92618 714 454-0800 Revision History Revision Date Comments 0.8 0.9 3/3/97 4/22/97 First internal release
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MAN-00646U-000
PCI0646U
PCI0646U
MAN-00646U-000
33MHz
cf8h
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Untitled
Abstract: No abstract text available
Text: DS1385ÍDS1387 DALLAS SEMICONDUCTOR D S1 3 8 5 /D S1 387 RAMified Real Time Clock 4K x 8 FEATURES PIN ASSIGNMENT • Upgraded IBM AT computer clock/calendar with 4K x 8 extended RAM • Totally nonvolatile with over 10 years of operation in the absence of power
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DS1385Ã
DS1387
24-hour
12-hour
DS1387
24-PIN
24-PIN
2blH13Q
Q0134S7
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Untitled
Abstract: No abstract text available
Text: MAN-000646-000 Rev. 1.2 December 12, 1995 PCI0646 Bus Master DMA PCI-IDE Chip Specification CMD Technology, Inc. 1 Vanderbilt Irvine, California 92718 714 454-0800 PCI0646 Chip Specifications Pin Descriptions The following is an alphabetical listing of PCI mode signals and their pin assignments. A numerically sorted pinout
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MAN-000646-000
PCI0646
PCI0646
33MHz
I0646
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Ic 741 as I to v converter
Abstract: 2812B
Text: FEB 4 1991 N^-yxi S ig e * % /7 tkfWH, v t & m m H a m a c r SP9490 %<•<.V. .r WS«-»»«.* iw-Kw»:«* 16-Bit, 1MHz Sampling A/D Converter Features • ■ ■ ■ ■ 16-bit Resolution 1us acquisition/conversion time 93dB SNR 93dB THD 3.25W Power Dissipation
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SP9490
16-Bit,
16-bit
SP9490
16-blt
250ns
750ns
Ic 741 as I to v converter
2812B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM72V1635BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V1635BTG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5164405BFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V1635BTG-4
THM72V1635BTG
216-word
72-bit
TC5164405BFT
THL64VxxxxBTG-xS
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tC5165165BF
Abstract: TC5165805bft
Text: THM72V8015BTG-4f-5 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015BTG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805BFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015BTG-4f-5
608-WORD
72-BIT
THM72V8015BTG
TC5165805BFT
THL64VxxxxBTG-xS
tC5165165BF
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m7101
Abstract: TC5164165
Text: TOSHIBA THM72V8035BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8035BTG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5164805BFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8035BTG-4
THM72V8035BTG
608-word
72-bit
TC5164805BFT
40-ns
50-ns
THL64VxxxxBTG-xS
m7101
TC5164165
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wire CAV
Abstract: BFT 97 040sr
Text: v 1. 5 ' I'/ / // / / // / // / / // / / // / A 50654-1001 a te NOTES Y - Y Z - Z ENG. NO. 1. □JLy> *§lS# , S t = 0. 25 MA TER I AL : PRE- TINNEO CORSON COPPER A L L OY (+=0.25) 2. J fM ilS l SA P P L I C A B L E WIRE RANGE AVS- 0. 3, CAV- 0. 3, CAVUS- 0. 3
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JA90078)
JA70I52)
wire CAV
BFT 97
040sr
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THL64V8015BTG-4f-5,-4Sf-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The TH L64V8015BTG is a 8,388,608-w ord by 64-bit dynamic RAM module consisting of eight T C 5165805BFT/BFTS DRAMs on a printed circuit board. This module is optimized for applications
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THL64V8015BTG-4f-5
608-WORD
64-BIT
L64V8015BTG
608-w
5165805BFT/BFTS
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khs 313
Abstract: No abstract text available
Text: TOSHIBA THM65V8015BTG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM 65V8015BTG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight T C 5165805B FT DRAMs on a printed circuit board. This module is optimized for applications which
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THM65V8015BTG-4f-5
608-WORD
64-BIT
65V8015BTG
5165805B
608-w
khs 313
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM65V4095BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V4095BTG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5164165BFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM65V4095BTG-4
304-WORD
64-BIT
THM65V4095BTG
TC5164165BFT
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tc5165165
Abstract: No abstract text available
Text: TOSHIBA THL64V4095BTG-4,-5,-4S,-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304 W O R D X 64 BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4095BTG is a 4,194,304 word by 64 bit dynamic RAM module which assembled 4 pcs of TC5164165BFT/BFTS on the printed circuit board. This module is optimized for application to the
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THL64V4095BTG-4
THL64V4095BTG
TC5164165BFT/BFTS
1666mW
1388mW
tc5165165
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Untitled
Abstract: No abstract text available
Text: T O SH IB A THL64V8015BTG-4,-5,-4S,-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V8015BTG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805BFT/BFTS DRAMs on a printed circuit board. This module is optimized for applications
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THL64V8015BTG-4
64-BIT
THL64V8015BTG
608-word
TC5165805BFT/BFTS
40-ns
50-ns
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM73V8015BTG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM 73V8015BTG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine T C 5165805B FT DRAMs on a printed circuit board. This module is optimized for applications which
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THM73V8015BTG-4f-5
608-WORD
72-BIT
73V8015BTG
5165805B
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