tc4051
Abstract: TC4052BP TC4053BP TC4051BP TC4051BTC4052BTC4053B TC4053B TC4051BF TC4051BFT TC4052BF TC4052BFT
Text: TC4051,52,53BP/BF/BFT 東芝CMOSデジタル集積回路 シリコン モノリシック TC4051BP,TC4051BF,TC4051BFT TC4052BP,TC4052BF,TC4052BFT TC4053BP,TC4053BF,TC4053BFT TC4051BP/BF/BFT Single 8-Channel Multiplexer/Demultiplexer TC4052BP/BF/BFT Differential 4- Channel
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TC4051
53BP/BF/BFT
TC4051BP
TC4051BF
TC4051BFT
TC4052BP
TC4052BF
TC4052BFT
TC4053BP
TC4053BF
TC4051BTC4052BTC4053B
TC4053B
TC4051BFT
TC4052BFT
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30227
Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
Text: BFT 92 PNP Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s
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VPS05161
OT-23
900MHz
Oct-25-1999
30227
IC f 922
Transistor BFT 98
infineon marking W1s SOT23
Transistor BFT 10
BFT92
W1S SOT23
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BFT65
Abstract: transistor bft65 f451 61 SIEMENS 25813
Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration
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BFT65
BFT65
Q62702-F451
fl235bDS
transistor bft65
f451
61 SIEMENS
25813
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zo 103 ma
Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
Text: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband
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Q62702-F456
Q62702-F457
103MHz
102mA
zo 103 ma
BFT66
BFt 65
BFT 24
045912E
Q62702-F456
RI-60
Q62702-F457
BFt 66
BFT67
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514280BJ / BZ / BFT / BTR - 70 TC514280BJ / BZ / BFT / BTR - 80 TC514280BJ / BZ / BFT / BTR - 1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 WORD x 18 BIT DYNAMIC RAM DESCRIPTION
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TC514280BJ
TC514280BJ/BZ/BFT/BTR
TC514280B
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514260BJ / BZ/ BFT/ BTR - 70 TC514260BJ / BZ / BFT / BTR - 80 TC514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION
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TC514260BJ
TC514260BJ/BZ/BFT/BTR
TC514260BJâ
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Transistor BFT 10
Abstract: transistor 3Ft bux c 651 emetteur 3ft73
Text: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature
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74sont
Transistor BFT 10
transistor 3Ft
bux c 651
emetteur
3ft73
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A3TE
Abstract: TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ
Text: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514260BJ/BFT-70/80
TC514260BJ/BFT
TC514273BJ
BEFORETE55
A3TE
TCFT 1103
TC514260BFT
A357
TC514260BJ-70 equivalent
514260
TC514273
TC514273BJ80
HDC3
TC514260BJ
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536
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TC551664
BJ/BFT-15
536-WORD
16-BIT
TC551664BJ/BFT
576-bit
SOJ44-P-400-1
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BFT66
Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Text: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband
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23SbQS
Q62702-F456
Q62702-F457
BFT66,
BFT67
103MHz
fi535b05
DQ0H715
BFT66
BFT67
BFT 66 S1
Q62702-F456
nf5102
6NF20
BA 758
Q62702-F457
QQQM710
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TC514260B
Abstract: tc514273 TC514260BJ
Text: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514260BJ/BFT-70/80
TC514260BJ/BFT
TC514273BJ
TC514260BJ/BFT-70/
TC514260B
tc514273
TC514260BJ
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ft66
Abstract: BFT66
Text: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband
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fl23Sb
aa35b05
0QQH715
ft66
BFT66
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TC51V16325B
Abstract: MJ-13
Text: TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to pro
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TC51V16325BJ/BFT-70
TC51V16325BJ/BFT
TC51V16325BJ/
400mil)
I/024
I/025
I/032
TC51V16325B
MJ-13
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TC5118325B
Abstract: mx c511 tc5118325
Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5118325BJ/BFT-70
TC5118325BJ/BFT
TC5118325BJ/
400mil)
J/BFT-70
DR16220995
TC5118325B
mx c511
tc5118325
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BE423
Abstract: No abstract text available
Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro
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TC5118325BJ/BFT-70
TC5118325BJ/BFT
TC5118325BJ/
400mil)
I/024
I/025
I/032
BE423
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T0141
Abstract: TC514260BJ
Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514260BJ/BZ/BFT-7 0,-80 TENTATIVE DATA 262,144 W O RD x 16 BIT DYNAM IC RAM DESCRIPTION The TC514260BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 16 bits. The TC514260BJ/BZ/BFT utilizes TOSHIBA'S CMOS Silicon, gate process technology as well as
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TC514260BJ/BZ/BFT-7
TC514260BJ/BZ/BFT
TC514260BJ/BZ/BFT-70,
-I/016
T0141
TC514260BJ
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Untitled
Abstract: No abstract text available
Text: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro
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724fl
TC51V16325BJ/BFT-70
TC51V16325BJ/BFT
16325B
400mil)
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tc5118180bj
Abstract: tc5118180 equivalent of BFT 51 8180b TC5118180B
Text: TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The T C 51 18180BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. The TC 5118180BJ/BFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5118180BJ/BFT-60/70
18180BJ/BFT
5118180BJ/BFT
B-155
tc5118180bj
tc5118180
equivalent of BFT 51
8180b
TC5118180B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both
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TC5118320B
J/BFT-60/70
TC5118320BJ/BFT
400mil)
DR16210994
D027714
TC5118320BJ/BFT-60/70
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TC5118160
Abstract: TC5118160B
Text: TOSHIBA TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 5118160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5118160BJ/BFT-60/70
5118160BJ/BFT
18160BJ/BFT
B-127
TC5118160
TC5118160B
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Untitled
Abstract: No abstract text available
Text: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to
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TC51V18325BJ/BFT-60/70
TheTC51V18325BJ/BFT
TC51V18325BJ/BFT
400mii)
400mil)
tem01
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro
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TC5118325BJ/BFT-70
18325BJ/BFT
5118325B
400mil)
I/032
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I03c
Abstract: SOJ44-P-400-1 TC55V1664BFT
Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V1664BJ/BFT-8
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-4QO-1
44-P-400-0
I03c
SOJ44-P-400-1
TC55V1664BFT
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SOJ44-P-400-1
Abstract: TC55V1664BFT SOJ44-P-4QO-1 i2124
Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V1664BJ/BFT-8
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-4QO-1
44-P-400-0
SOJ44-P-400-1
TC55V1664BFT
i2124
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