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    BFR193L3 Search Results

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    BFR193L3 Price and Stock

    Infineon Technologies AG BFR193L3E6327XTMA1

    RF TRANS NPN 12V 8GHZ TSLP-3-1
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    DigiKey BFR193L3E6327XTMA1 Digi-Reel 9,485 1
    • 1 $0.31
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    BFR193L3E6327XTMA1 Cut Tape 9,485 1
    • 1 $0.31
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    BFR193L3E6327XTMA1 Reel 15,000
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    Avnet Americas BFR193L3E6327XTMA1 Ammo Pack 17 Weeks, 1 Days 1
    • 1 $0.322
    • 10 $0.219
    • 100 $0.166
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    BFR193L3E6327XTMA1 Reel 13 Weeks 15,000
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    Newark BFR193L3E6327XTMA1 Cut Tape 11,794 1
    • 1 $0.094
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    Rochester Electronics BFR193L3E6327XTMA1 134,900 1
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    Chip One Stop BFR193L3E6327XTMA1 Cut Tape 13,765
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    EBV Elektronik BFR193L3E6327XTMA1 5,895,000 14 Weeks 15,000
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    New Advantage Corporation BFR193L3E6327XTMA1 4,710,000 1
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    Infineon Technologies AG BFR 193L3 E6327

    RF Bipolar Transistors NPN Silicon RF TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFR 193L3 E6327 8,839
    • 1 $0.31
    • 10 $0.188
    • 100 $0.141
    • 1000 $0.135
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    Infineon Technologies AG BFR193L3

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    Bristol Electronics BFR193L3 70
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    Infineon Technologies AG BFR193L3E6327

    Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME BFR193L3E6327 750 1
    • 1 $0.499
    • 10 $0.321
    • 100 $0.218
    • 1000 $0.165
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    Chip 1 Exchange BFR193L3E6327 19,500
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    BFR193L3 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR193L3 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193L3 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193L3E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V TSLP-3 Original PDF
    BFR193L3E6327XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V TSLP-3 Original PDF

    BFR193L3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		BFR193L3 AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		BFR193L3 AEC-Q101 PDF

    infineon marking L2

    Abstract: BFR193L3
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR193L3 infineon marking L2 BFR193L3 PDF

    infineon AN077

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		BFR193L3 infineon AN077 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		BFR193L3 PDF

    BFR193L3

    Abstract: BFR340L3 marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR340L3 BFR193L3 BFR340L3 marking FA PDF

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA PDF

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860 PDF

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR360L3 PDF

    C5 MARKING TRANSISTOR

    Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)


    Original     		BFR380L3 C5 MARKING TRANSISTOR infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2 PDF

    transistor packing code 3f

    Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OD323 transistor packing code 3f marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A PDF

    diode Marking Code b3

    Abstract: BAR90-02LRH BFR193L3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 BFR19
    Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 diode Marking Code b3 BAR90-02LRH BFR193L3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 BFR19 PDF

    BC846 Infineon

    Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850 PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package


    Original     		BFR380L3 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 PDF

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 PDF

    BFR94

    Abstract: No abstract text available
    Text: BFR949L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR949L3 BFR94 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD8V0L1B-02LRH PDF

    ESD8V0L1B-02LRH

    Abstract: ESD8V0L1B-02EL TSLP-2-18 TSLP-2-17 PF137
    Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD8V0L1B-02LRH ESD8V0L1B-02EL TSLP-2-18 TSLP-2-17 PF137 PDF

    E6327

    Abstract: marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74
    Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3


    Original     		BAV70. BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U BAV70F* E6327 marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74 PDF