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    BFR193 Price and Stock

    Infineon Technologies AG BFR193E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT23-3
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    DigiKey BFR193E6327HTSA1 Reel 27,000 3,000
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    BFR193E6327HTSA1 Digi-Reel 1
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    Mouser Electronics BFR193E6327HTSA1 62,314
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    Infineon Technologies AG BFR193WH6327XTSA1

    RF TRANS NPN 12V 8GHZ SOT323-3
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    DigiKey BFR193WH6327XTSA1 Reel 27,000 3,000
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    BFR193WH6327XTSA1 Reel 3,000
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    Infineon Technologies AG BFR193FH6327XTSA1

    RF TRANS NPN 12V 8GHZ TSFP-3
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    DigiKey BFR193FH6327XTSA1 Reel 21,000 3,000
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    BFR193FH6327XTSA1 Digi-Reel 1
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    Mouser Electronics BFR193FH6327XTSA1 4,422
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    BFR193FH6327XTSA1 3,000 10 Weeks 3,000
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    Rochester Electronics BFR193FH6327XTSA1 98,425 1
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    Infineon Technologies AG BFR193L3E6327XTMA1

    RF TRANS NPN 12V 8GHZ TSLP-3-1
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    DigiKey BFR193L3E6327XTMA1 Cut Tape 9,600 1
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    BFR193L3E6327XTMA1 Ammo Pack 17 Weeks, 1 Days 1
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    Rochester Electronics LLC BFR193FH6327

    HIGH LINEARITY TRANSISTOR
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    BFR193 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFR193 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR193 Siemens NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Original PDF
    BFR193 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR193 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFR193E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-23 Original PDF
    BFR193E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-23 Original PDF
    BFR193FH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 80MA TSFP-3 Original PDF
    BFR193FH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 12V 80MA TSFP-3 Original PDF
    BFR193L3 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193L3 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193L3E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V TSLP-3 Original PDF
    BFR193L3E6327XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V TSLP-3 Original PDF
    BFR193T Infineon Technologies NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package Original PDF
    BFR193T Vishay Siliconix Silicon NPN Planar RF Transistor Original PDF
    BFR193T Vishay Siliconix Silicon NPN Planar RF Transistor Original PDF
    BFR193T Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR193TF Vishay Siliconix Transistors, RF & AF Original PDF
    BFR193TF Vishay Telefunken Silicon Npn Planar Rf Transistor Original PDF

    BFR193 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFR193T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193T VPS05996

    Untitled

    Abstract: No abstract text available
    Text: BFR193 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFR193 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFR193F Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant and halogen-free product • Qualification report according to AEC-Q101 available


    Original     		PDF BFR193F AEC-Q101

    RCs INFINEON

    Abstract: No abstract text available
    Text: BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR193F RCs INFINEON

    BFR193T

    Abstract: SC75 210ts VPS05996
    Text: BFR193T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193T VPS05996 900MHz Aug-09-2001 BFR193T SC75 210ts VPS05996

    sot23 marking zs

    Abstract: No abstract text available
    Text: BFR193T / BFR193TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour 3 2 Applications 1 For low-noise, high-gain applications such as power


    Original     		PDF BFR193T BFR193TW OT-23 BFR193TW OT-323 D-74025 24-Aug-04 sot23 marking zs

    Untitled

    Abstract: No abstract text available
    Text: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFR193T BFR193TW 2002/95/EC 2002/96/EC OT-23 BFR193TW OT-323 D-74025 28-Apr-05

    BFR193TF

    Abstract: No abstract text available
    Text: BFR193TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR193TF OT490 OT490 D-74025 23-Sep-02 BFR193TF

    Untitled

    Abstract: No abstract text available
    Text: BFR193 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193 10mponents

    bfr193

    Abstract: No abstract text available
    Text: BFR193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR193 150components bfr193

    Untitled

    Abstract: No abstract text available
    Text: BFR193F NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant and halogen-free (WEEE compliant) product ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR193F 15components

    Untitled

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component


    Original     		PDF BFR193T BFR193TW 2002/95/EC 2002/96/EC OT-23 BFR193TW OT-323 18-Jul-08

    BFR193T

    Abstract: BFR193TW
    Text: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFR193T BFR193TW 2002/95/EC 2002/96/EC BFR193T OT-23 OT-323 08-Apr-05 BFR193TW

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BFR193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Marking


    Original     		PDF BFR193 VPS05161

    Untitled

    Abstract: No abstract text available
    Text: BFR193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR193W

    BFR193

    Abstract: 8-72V
    Text: BFR193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Marking


    Original     		PDF BFR193 VPS05161 Aug-09-2001 BFR193 8-72V

    50w transistor

    Abstract: BFR193T BFR193TW
    Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		PDF BFR193T/BFR193TW BFR193T BFR193TW D-74025 14-Feb-00 50w transistor

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFR193L3 AEC-Q101

    BFR193TF

    Abstract: No abstract text available
    Text: BFR193TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR193TF OT-490 OT-490 08-Apr-05 BFR193TF

    BFR193T

    Abstract: BFR193TW ZL50
    Text: BFR193T/BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		PDF BFR193T/BFR193TW BFR193T BFR193TW D-74025 14-Feb-00 ZL50

    Untitled

    Abstract: No abstract text available
    Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		PDF BFR193T/BFR193TW BFR193T BFR193TW D-74025 21-Sep-99

    infineon marking L2

    Abstract: BFR193L3
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193L3 infineon marking L2 BFR193L3

    G1026

    Abstract: No abstract text available
    Text: BFR193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR193W VSO05561 OT323 G1026