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    Infineon Technologies AG BFR 181T E6327

    RF TRANS NPN 12V 8GHZ SC75
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    DigiKey BFR 181T E6327 Reel 6,000
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    Infineon Technologies AG BFR181T E6327

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    Bristol Electronics BFR181T E6327 1,724
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    Quest Components BFR181T E6327 1,379
    • 1 $0.924
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    • 100 $0.4158
    • 1000 $0.2772
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    Vishay Semiconductors BFR181TGS08

    Transistor
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    ComSIT USA BFR181TGS08 15,000
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    BFR181T Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFR181T Infineon Technologies NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package Original PDF
    BFR181T Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR 181T E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR181TE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR181TE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 3SC-75 T/R Original PDF
    BFR181TF Vishay Siliconix Transistors, RF & AF Original PDF
    BFR181TF Vishay Telefunken Silicon Npn Planar Rf Transistor Original PDF
    BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR181TW-GS08 Vishay TRANS GP BJT NPN 10V 0.02A 3SOT-323 T/R Original PDF

    BFR181T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCR108T

    Abstract: BFR181T SC75
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T BCR108T BFR181T SC75

    BFR181T

    Abstract: SC75
    Text: BFR181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T VPS05996 900MHz Aug-09-2001 BFR181T SC75

    Untitled

    Abstract: No abstract text available
    Text: BFR181T / BFR181TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High power gain Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. 3 2 1 Mechanical Data


    Original     		PDF BFR181T BFR181TW OT-23 BFR181TW OT-323 D-74025 30-Aug-04

    BFR181T

    Abstract: BFR181TW
    Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure


    Original     		PDF BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99

    BFR181TF

    Abstract: No abstract text available
    Text: BFR181TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR181TF OT-490 OT-490 08-Apr-05 BFR181TF

    BFR181T

    Abstract: Telefunken
    Text: BFR181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR181T D-74025 17-Apr-96 BFR181T Telefunken

    BFR181TW

    Abstract: Telefunken
    Text: BFR181TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR181TW D-74025 11-Oct-96 BFR181TW Telefunken

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T VPS05996

    BFR181T

    Abstract: BFR181TW
    Text: BFR181T/BFR181TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure


    Original     		PDF BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T VPS05996

    BFR181T

    Abstract: BFR181TW
    Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure


    Original     		PDF BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99

    telefunken

    Abstract: BFR181T
    Text: BFR181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR181T D-74025 17-Apr-96 telefunken BFR181T

    BFR181TF

    Abstract: No abstract text available
    Text: BFR181TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR181TF OT-490 OT-490 D-74025 30-Aug-04 BFR181TF

    Untitled

    Abstract: No abstract text available
    Text: BFR181TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR181TF OT-490 D-74025 28-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BFR181T / BFR181TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at


    Original     		PDF BFR181T BFR181TW 2002/95/EC 2002/96/EC OT-23 BFR181TW OT-323 D-74025 28-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure


    Original     		PDF BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99

    BFR181TF

    Abstract: No abstract text available
    Text: BFR181TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR181TF OT490 OT490 D-74025 23-Sep-02 BFR181TF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    NPN planar RF transistor

    Abstract: No abstract text available
    Text: Tem ic BFR181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    OCR Scan     		PDF BFR181T 17-Apr-96 NPN planar RF transistor

    Untitled

    Abstract: No abstract text available
    Text: _ BFR181T/BFR181TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 0.5 m A to 12 mA.


    OCR Scan     		PDF BFR181T/BFR181TW 181TW D-74025 20-Jan-99

    s525

    Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
    Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52


    OCR Scan     		PDF BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T