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    BFR 30 TRANSISTOR Search Results

    BFR 30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BFR 30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VSO05561

    Abstract: Transistor BFR 30
    Text: BFR 93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AW


    Original     		PDF VSO05561 OT-323 900MHz Oct-13-1999 VSO05561 Transistor BFR 30

    marking 93A

    Abstract: BFR93A transistor marking R2s
    Text: BFR 93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration


    Original     		PDF VPS05161 OT-23 900MHz Oct-13-1999 marking 93A BFR93A transistor marking R2s

    MMBT589LT1G

    Abstract: No abstract text available
    Text: MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF MMBT589LT1G MMBT589LT1/D MMBT589LT1G

    MMBT489LT1G

    Abstract: No abstract text available
    Text: MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR Compliant


    Original     		PDF MMBT489LT1G MMBT489LT1/D MMBT489LT1G

    Untitled

    Abstract: No abstract text available
    Text: MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR Compliant


    Original     		PDF MMBT489LT1G MMBT489LT1/D

    transistor marking R2s

    Abstract: Q62702-F1489
    Text: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-323 Q62702-F1489 900MHz Dec-11-1996 transistor marking R2s Q62702-F1489

    Transistor BFR 97

    Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
    Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    Original     		PDF Q62702-F1051 OT-23 Transistor BFR 97 Transistor BFR 37 Q62702-F1051 Transistor BFR 98

    transistor marking R2s

    Abstract: SC-75 bfr 135
    Text: BFR 93AT NPN Silicon RF Transistor Preliminary data 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF VPS05996 SC-75 900MHz Dec-16-1998 transistor marking R2s SC-75 bfr 135

    Transistor BFR

    Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1086 OT-23 Transistor BFR Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93

    Transistor BFR 93

    Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1086 OT-23 Transistor BFR 93 Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35

    VSO05561

    Abstract: No abstract text available
    Text: BFR 183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VSO05561 OT-323 900MHz Oct-25-1999 VSO05561

    S2126

    Abstract: No abstract text available
    Text: BFR 183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05161 OT-23 Oct-13-1999 S2126

    SC-75

    Abstract: No abstract text available
    Text: BFR 183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05996 SC-75 900MHz Oct-20-1999 SC-75

    Transistor BFR 91

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor BFR 91 • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 91 BFR 91


    OCR Scan     		PDF Q62702-F569 fl235 Q0b72 Transistor BFR 91

    4392

    Abstract: MARKING S04 transistor 4393 Transistor BFR 30 transistor ESM 30 MARK SO SOT
    Text: A C T IV E COMPONENTS FOR H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IRC U ITS H Y B R ID E S i CB-166 SOT-23 N channel field effect transistors Transistors à effet de champ. canal N Type Type Mark mg Marq uege N BFR 30 M1 BFR 31 M2 R iu f V DS


    OCR Scan     		PDF CB-166 OT-23) 4392 MARKING S04 transistor 4393 Transistor BFR 30 transistor ESM 30 MARK SO SOT

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1489 OT-323 Q122QS3 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BFR 91A NPN Silicon RF Transistor • For low-distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F735 0235bGS D0b73Gl 6235b05 D0b7302

    siemens s450

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFR 93A • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. E CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF OT-23 siemens s450

    bft93

    Abstract: marking x1 B 647 AC transistor
    Text: BFT93 PNP Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF BFT93 BFT93 OT-23 marking x1 B 647 AC transistor

    marking GG

    Abstract: marking code 604 SOT23
    Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package


    OCR Scan     		PDF OT-23 marking GG marking code 604 SOT23

    BFR 450

    Abstract: bfr 135 BFR180W BFS17P BFS17W BFT92 BFT93 BFT92P bfr194 193W
    Text: Transistoren Transistors HF-Transistoren Forts. RF-Transistors (cont'd) BFR 92P Chara<;teristics (TA = 25 °C) Maximum Ratings Type N = NPN P = PNP N ^C EO k P \Ot fr F k V mA mW GHz dB mA V 15 30 280 30 Vce 5.00 1.5 2 280 5.00 1.5 1.7 1.7 ▼ BFR92W N 15


    OCR Scan     		PDF OT-23 OT-323 BFR180W BFR 450 bfr 135 BFS17P BFS17W BFT92 BFT93 BFT92P bfr194 193W

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F1051 OT-23 a23SbQS

    Untitled

    Abstract: No abstract text available
    Text: BSE D • Ô23fc»320 0 0 1 7 0 ^ PNP Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS ñ H SIP BFT 93 _ *'" " _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN .


    OCR Scan     		PDF OT-23 23b320 BFT93

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.


    OCR Scan     		PDF BFR93A OT-23