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    BFR 30 TRANSISTOR Search Results

    BFR 30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BFR 30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor BFR 91

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor BFR 91 • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 91 BFR 91


    OCR Scan     		Q62702-F569 fl235 Q0b72 Transistor BFR 91 PDF

    VSO05561

    Abstract: Transistor BFR 30
    Text: BFR 93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AW


    Original     		VSO05561 OT-323 900MHz Oct-13-1999 VSO05561 Transistor BFR 30 PDF

    marking 93A

    Abstract: BFR93A transistor marking R2s
    Text: BFR 93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration


    Original     		VPS05161 OT-23 900MHz Oct-13-1999 marking 93A BFR93A transistor marking R2s PDF

    transistor marking R2s

    Abstract: AMI siemens BFR93AW k150t
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1489 OT-323 900MHz transistor marking R2s AMI siemens BFR93AW k150t PDF

    4392

    Abstract: MARKING S04 transistor 4393 Transistor BFR 30 transistor ESM 30 MARK SO SOT
    Text: A C T IV E COMPONENTS FOR H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IRC U ITS H Y B R ID E S i CB-166 SOT-23 N channel field effect transistors Transistors à effet de champ. canal N Type Type Mark mg Marq uege N BFR 30 M1 BFR 31 M2 R iu f V DS


    OCR Scan     		CB-166 OT-23) 4392 MARKING S04 transistor 4393 Transistor BFR 30 transistor ESM 30 MARK SO SOT PDF

    MMBT589LT1G

    Abstract: No abstract text available
    Text: MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		MMBT589LT1G MMBT589LT1/D MMBT589LT1G PDF

    MMBT489LT1G

    Abstract: No abstract text available
    Text: MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR Compliant


    Original     		MMBT489LT1G MMBT489LT1/D MMBT489LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR Compliant


    Original     		MMBT489LT1G MMBT489LT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		Q62702-F1489 OT-323 Q122QS3 900MHz PDF

    transistor marking R2s

    Abstract: Q62702-F1489
    Text: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-323 Q62702-F1489 900MHz Dec-11-1996 transistor marking R2s Q62702-F1489 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BFR 91A NPN Silicon RF Transistor • For low-distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F735 0235bGS D0b73Gl 6235b05 D0b7302 PDF

    siemens s450

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFR 93A • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. E CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		OT-23 siemens s450 PDF

    bft93

    Abstract: marking x1 B 647 AC transistor
    Text: BFT93 PNP Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		BFT93 BFT93 OT-23 marking x1 B 647 AC transistor PDF

    marking GG

    Abstract: marking code 604 SOT23
    Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package


    OCR Scan     		OT-23 marking GG marking code 604 SOT23 PDF

    Transistor BFR 97

    Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
    Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    Original     		Q62702-F1051 OT-23 Transistor BFR 97 Transistor BFR 37 Q62702-F1051 Transistor BFR 98 PDF

    transistor marking R2s

    Abstract: SC-75 bfr 135
    Text: BFR 93AT NPN Silicon RF Transistor Preliminary data 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		VPS05996 SC-75 900MHz Dec-16-1998 transistor marking R2s SC-75 bfr 135 PDF

    Transistor BFR

    Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		Q62702-F1086 OT-23 Transistor BFR Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93 PDF

    Transistor BFR 93

    Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		Q62702-F1086 OT-23 Transistor BFR 93 Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		Q62702-F1051 OT-23 a23SbQS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSE D • Ô23fc»320 0 0 1 7 0 ^ PNP Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS ñ H SIP BFT 93 _ *'" " _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN .


    OCR Scan     		OT-23 23b320 BFT93 PDF

    VSO05561

    Abstract: No abstract text available
    Text: BFR 183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VSO05561 OT-323 900MHz Oct-25-1999 VSO05561 PDF

    S2126

    Abstract: No abstract text available
    Text: BFR 183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05161 OT-23 Oct-13-1999 S2126 PDF

    SC-75

    Abstract: No abstract text available
    Text: BFR 183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		VPS05996 SC-75 900MHz Oct-20-1999 SC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.


    OCR Scan     		BFR93A OT-23 PDF