BFQ 325
Abstract: bfq 85 marking GMA BFQ 58
Text: BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-23
Q62702-F1049
Dec-12-1996
BFQ 325
bfq 85
marking GMA
BFQ 58
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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O-92d
2907A PNP bipolar transistors
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 450 pnp
diode S6 78A
transistors bf 517
BFG sot89
BC 327 SOT 23
BAS20 SOT23
DIODE TA 70/04
bcp 846
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tda 6109
Abstract: V23100-V7228-F110 B32650 V23100-V7213-F104 V23100-W1224-A104 V23082-A1005-A401 V23108-A1003-B101 V23104-A1003-B101 V23100-V7228-F104 B32110-F
Text: Katalognummern-Referenz: SCHURICHT-Nummern ⇔ SIEMENS-Nummern Da im Katalog aus drucktechnischen Gründen die Siemensnummern oft nicht zusammenhängend – sondern in Produktgruppen- und Einzelexemplar-Teil aufgetrennt – dargestellt sind, finden Sie hier in einer großen Tabelle für jedes Bauteil die SCHURICHT- und die SIEMENS-Nummern
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B57236S509M"
Q67000A8118
Q67000A8183
Q67000A9094
Q670008237
Q67000A9108
Q67000A9062
Q67000A8187
Q67000A9003
Q67000A9059
tda 6109
V23100-V7228-F110
B32650
V23100-V7213-F104
V23100-W1224-A104
V23082-A1005-A401
V23108-A1003-B101
V23104-A1003-B101
V23100-V7228-F104
B32110-F
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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25-RF-BIPOLAR-Transistors.
45-RF-BIPOLAR-Transistors.
OT-23
OT-143
S4 78a DIODE schottky
diode S6 78A
BC 148 TRANSISTOR DATASHEET
transistors BC 543
TRANSISTOR BC 158
BC 158 is npn or pnp
68W npn
TRANSISTOR BC
s6 78a
baw 92
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2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-23
OT-143
2907A PNP bipolar transistors
diode S6 78A
MMIC SOT 363
s1140
DIODE TA 70/04
2907A PNP bipolar transistors datasheet
Diode BAW 62
TRANSISTOR BC 158
baw 92
68W SOT
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PAL 007 A
Abstract: carbon composition resistors BFN 15 PAL 007 B SLMA002 SLMA004 THS3202 THS4211 THS4211DRB THS4215
Text: DGN-8 www.ti.com DGK-8 D-8 THS4211 THS4215 DRB-8 SLOS400C − SEPTEMBER 2002 − REVISED JANUARY 2004 LOWĆDISTORTION, HIGHĆSPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion
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THS4211
THS4215
SLOS400C
THS4215)
PAL 007 A
carbon composition resistors
BFN 15
PAL 007 B
SLMA002
SLMA004
THS3202
THS4211
THS4211DRB
THS4215
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hep 154 silicon diode
Abstract: 437 BGY of hep 154 silicon diode XR BU 3150 MP 9720 ds BFQ 540 application marking code HFr P6KE10A HY 1.5ke series add 5201
Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Transient Voltage Suppression Diodes The Protection Products Group of World Products Inc. is committed to providing the optimum products for your
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DO214AB
UL94V-0
MIL-STD-750
hep 154 silicon diode
437 BGY
of hep 154 silicon diode
XR BU 3150
MP 9720 ds
BFQ 540 application
marking code HFr
P6KE10A HY
1.5ke series
add 5201
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THS4211DRB
Abstract: THS4215 THS4271 THS4503 SLMA002 SLMA004 THS3202 THS4211 NG19
Text: DGN-8 www.ti.com DGK-8 D-8 THS4211 THS4215 DRB-8 SLOS400C − SEPTEMBER 2002 − REVISED JANUARY 2004 LOWĆDISTORTION, HIGHĆSPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion
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THS4211
THS4215
SLOS400C
THS4215)
THS4211DRB
THS4215
THS4271
THS4503
SLMA002
SLMA004
THS3202
THS4211
NG19
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Untitled
Abstract: No abstract text available
Text: THS4211 THS4215 www.ti.com SLOS400A – SEPTEMBER 2002 – REVISED OCTOBER 2002 LOW-DISTORTION HIGH-SPEED VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion APPLICATIONS D High Linearity ADC Preamplifier
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THS4211
THS4215
SLOS400A
THS4215)
THS4211
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PAL 008
Abstract: THS4211DGN MSOP-8 SLMA002 SLMA004 THS3202 THS4211 THS4211D THS4215 THS4271 THS4503
Text: THS4211 THS4215 www.ti.com SLOS400A – SEPTEMBER 2002 – REVISED OCTOBER 2002 LOW-DISTORTION HIGH-SPEED VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion APPLICATIONS D High Linearity ADC Preamplifier
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THS4211
THS4215
SLOS400A
THS4215)
PAL 008
THS4211DGN MSOP-8
SLMA002
SLMA004
THS3202
THS4211
THS4211D
THS4215
THS4271
THS4503
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Untitled
Abstract: No abstract text available
Text: DGN-8 DGK-8 D-8 www.ti.com THS4211 THS4215 DRB-8 SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004 LOW-DISTORTION, HIGH-SPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES • • • • • • • • • DESCRIPTION Unity Gain Stability Wide Bandwidth: 1 GHz
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THS4211
THS4215
SLOS400D
THS4215)
THS4215
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Untitled
Abstract: No abstract text available
Text: DGN-8 DGK-8 D-8 www.ti.com THS4211 THS4215 DRB-8 SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004 LOW-DISTORTION, HIGH-SPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES • • • • • • • • • DESCRIPTION Unity Gain Stability Wide Bandwidth: 1 GHz
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THS4211
THS4215
SLOS400D
THS4215)
THS4215
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Untitled
Abstract: No abstract text available
Text: DGN-8 DGK-8 D-8 www.ti.com THS4211 THS4215 DRB-8 SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004 LOW-DISTORTION, HIGH-SPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES • • • • • • • • • DESCRIPTION Unity Gain Stability Wide Bandwidth: 1 GHz
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THS4211
THS4215
SLOS400D
THS4215)
THS4215
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1049
OT-23
900MHz
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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bfq81
Abstract: ki12
Text: SIEMENS BFQ81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. 1=B h Q62702-F1049 O RAs CO BFQ81 ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!
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BFQ81
OT-23
Q62702-F1049
900MHz
bfq81
ki12
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bc109 equivalent
Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. D evice Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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BCW35GP.
BFX84
BFX85
BFX86
BCY78
BCY79
BCY58
BCY59
2N720A
BC325
bc109 equivalent
BC107 equivalent transistors
EQUIVALENT TRANSISTOR bc108
bc108 equivalent
BC177 equivalent
BC107 equivalent
BC178 equivalent
equivalent of BC178
2n3963 equivalent
transistor equivalent bc108
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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